# US 10,483,298 B2 · Multi-sensor optical device for detecting chemical species and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,298 B2 - Document ID: US10483298B2 - Status: Granted - Kind: B2 - Application number: 15/583,750 - Filed: 2017-05-01 - Published: 2017-08-17 - Granted: 2019-11-19 - Earliest claimed: 2014-04-24 - Assignees: STMicroelectronics S.r.l. - Applicants: Stmicroelectronics S.R.L. - Inventors: Massimo Cataldo Mazzillo; Alfio Russo - Web page: https://patentgrep.com/patent/US10483298B2 ## CPC - H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors} - G01N 21/05: Flow-through cuvettes (G01N21/09 takes precedence; handling fluid samples G01N1/10) - G01N 21/31: Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry {(G01N21/72 takes precedence)} - G01N 21/314: {with comparison of measurements at specific and non-specific wavelengths (dual wavelength spectrometry G01J3/427)} - G01N 21/61: Non-dispersive gas analysers {(G01N21/3504 takes precedence)} - G01N 21/85: Investigating moving fluids or granular solids - H10F 30/2218: {the devices comprising active layers made of only Group IV-VI materials} - H10F 30/227: the potential barrier being a Schottky barrier - H10F 71/1215: {comprising at least two Group IV elements, e.g. SiGe} - H10F 77/1226: comprising multiple Group IV elements, e.g. SiC - H10F 77/331: {for filtering or shielding light, e.g. multicolour filters for photodetectors} - G01M 15/108: {using optical methods} - G01N 21/33: using ultraviolet light (G01N21/39 takes precedence) - G01N 2021/3137: {with selection of wavelengths after the sample} - G01N 2021/8578: {Gaseous flow} - G01N 2201/0612: Laser diodes - H10F 30/2215: {the devices comprising active layers made of only Group III-V materials} - Y02E 10/50: Photovoltaic [PV] energy - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) - G01M: TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths. ## Claims ### Claim 1 A device, comprising: a substrate; a semiconductor layer on the substrate, the semiconductor layer having a first portion with a first thickness and a second portion with a second thickness, the first portion having a first surface; a first optical sensor in the first portion, the first optical sensor including: a first anode recessed in the first portion, the first anode having an exposed surface coplanar with the first surface; and a second optical sensor in the second portion. ### Claim 2 (depends on 1) The device of claim 1 wherein the second optical sensor includes a second anode in the semiconductor layer. ### Claim 3 (depends on 2) The device of claim 2 wherein the semiconductor layer includes the second portion having a second surface, the second anode being coplanar with the second surface. ### Claim 4 (depends on 3) The device of claim 3 wherein the first anode forms a PN junction with the semiconductor layer and the second anode forms a PN junction with the semiconductor layer. ### Claim 5 (depends on 2) The device of claim 2 wherein the second optical sensor includes an absorption layer on the second anode. ### Claim 6 (depends on 2) The device of claim 2 wherein the first optical sensor includes a first contact on the first anode and the second optical sensor includes a second contact on the second anode. ### Claim 7 (depends on 6) The device of claim 6 wherein the second optical sensor includes an absorption layer on the second anode. ### Claim 8 (depends on 7) The device of claim 7 wherein the absorption layer abuts the second contact. ### Claim 9 A device, comprising: a substrate; a semiconductor layer on the substrate, the semiconductor layer having a first portion with a first thickness and a second portion with a second thickness; a first optical sensor formed on a first surface of the first portion; a second optical sensor formed on a second surface of the second portion; and a contact layer formed on a third surface of the semiconductor layer, the third surface being opposite the first surface and the second surface. ### Claim 10 (depends on 9) The device of claim 9 wherein the first optical sensor includes a first metal layer formed on the first surface of the semiconductor layer and the second optical sensor includes a second metal layer formed on the second surface of the semiconductor layer. ### Claim 11 (depends on 10) The device of claim 10 wherein the second optical sensor includes an absorption layer on the second metal layer. ### Claim 12 (depends on 10) The device of claim 10 wherein the first optical sensor includes a first contact on the first metal layer and the second optical sensor includes a second contact on the second metal layer. ### Claim 13 A device, comprising: a substrate; a semiconductor layer on a first surface of the substrate; a first sensor in the semiconductor layer, the first sensor including: a first anode; and a first contact coupled to the first anode; a second sensor in the semiconductor layer, the second sensor including: a second anode; an absorption layer on the second anode; and a second contact coupled to the second anode; a cathode on a second surface of the substrate, the second surface being opposite the first surface of the substrate, the cathode extending between the first sensor and the second sensor. ### Claim 14 (depends on 13) The device of claim 13 wherein the semiconductor layer includes a first portion with a first surface and a second portion with a second surface, the first anode being coplanar with the first surface and the second anode being coplanar with the second surface. ### Claim 15 (depends on 14) The device of claim 14 wherein the first anode forms a PN junction with the semiconductor layer and the second anode forms a PN junction with the semiconductor layer. ### Claim 16 (depends on 14) The device of claim 14 wherein the first portion has a first thickness and the second portion has a second thickness, the second thickness being greater than the first thickness. ### Claim 17 (depends on 13) The device of claim 13 further comprising a contact layer on the cathode.