# US 10,483,295 B2 · Semiconductor device comprising resistor comprising metal oxide

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- Number: US 10,483,295 B2
- Document ID: US10483295B2
- Status: Granted
- Kind: B2
- Application number: 15/865,567
- Filed: 2018-01-09
- Published: 2018-05-31
- Granted: 2019-11-19
- Earliest claimed: 2013-09-25
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Junichi Koezuka; Kenichi Okazaki; Yasuharu Hosaka
- Web page: https://patentgrep.com/patent/US10483295B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.

## Claims

### Claim 1

A semiconductor device comprising:
a resistor comprising a metal oxide film over an insulating surface and a nitride insulating film in contact with the metal oxide film,
wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region,
wherein the metal oxide film is a stack of an In-M-Zn oxide film and an In—N—Zn oxide film, M and N being each Al, Ti, Ga, Y, Zr, Sn, La, Ce, or Nd,
wherein the In-M-Zn oxide film is on and in direct contact with the In—N—Zn oxide film, and
wherein the proportion of M atoms in the In-M-Zn oxide film is higher than the proportion of N atoms in the In—N—Zn oxide film.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein the metal oxide film comprises a plurality of crystal parts,
wherein c-axis alignment is found in the plurality of crystal parts, and
wherein c-axes in the plurality of crystal parts are aligned in a direction parallel to a normal vector of a top surface of the metal oxide film.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein the metal oxide film comprises a plurality of crystal parts,
wherein a-axes are not aligned in the plurality of crystal parts in the metal oxide film, and
wherein b-axes are not aligned in the plurality of crystal parts in the metal oxide film.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, further comprising a transistor,
wherein the transistor comprises:
a gate electrode over the insulating surface;
an oxide semiconductor film at least partly overlapping with the gate electrode;
a gate insulating film between the gate electrode and the oxide semiconductor film;
a pair of electrodes in contact with the oxide semiconductor film;
an oxide insulating film at least partly overlapping with the pair of electrodes; and
the nitride insulating film in contact with the oxide insulating film.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the nitride insulating film is formed of silicon nitride, a silicon nitride oxide, an aluminum nitride, or an aluminum nitride oxide.

### Claim 6

A semiconductor device comprising:
a resistor comprising a metal oxide film over an insulating surface and a nitride insulating film over the metal oxide film,
wherein when a region in the metal oxide film is observed with a transmission electron diffraction measurement apparatus while changing an observation area one-dimensionally within a range of 300 nm, a diffraction pattern with luminescent spots indicating alignment is observed in 80% or more and less than 100% of the region,
wherein the metal oxide film is a stack of an In-M-Zn oxide film and an In—N—Zn oxide film, M and N being each Al, Ti, Ga, Y, Zr, Sn, La, Ce, or Nd,
wherein the In-M-Zn oxide film is on and in direct contact with the In—N—Zn oxide film, and
wherein the proportion of M atoms in the In-M-Zn oxide film is higher than the proportion of N atoms in the In—N—Zn oxide film.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6,
wherein the metal oxide film comprises a plurality of crystal parts,
wherein c-axis alignment is found in the plurality of crystal parts, and
wherein c-axes in the plurality of crystal parts are aligned in a direction parallel to a normal vector of a top surface of the metal oxide film.

### Claim 8 (depends on 6)

The semiconductor device according to claim 6,
wherein the metal oxide film comprises a plurality of crystal parts,
wherein a-axes are not aligned in the plurality of crystal parts in the metal oxide film, and
wherein b-axes are not aligned in the plurality of crystal parts in the metal oxide film.

### Claim 9 (depends on 6)

The semiconductor device according to claim 6, further comprising a transistor,
wherein the transistor comprises:
a gate electrode over the insulating surface;
an oxide semiconductor film at least partly overlapping with the gate electrode;
a gate insulating film between the gate electrode and the oxide semiconductor film;
a pair of electrodes in contact with the oxide semiconductor film;
an oxide insulating film at least partly overlapping with the pair of electrodes; and
the nitride insulating film in contact with the oxide insulating film.

### Claim 10 (depends on 6)

The semiconductor device according to claim 6, wherein the nitride insulating film is formed of silicon nitride, a silicon nitride oxide, an aluminum nitride, or an aluminum nitride oxide.