# US 10,483,256 B2 · Optoelectronic semiconductor device and apparatus with an optoelectronic semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,256 B2 - Document ID: US10483256B2 - Status: Granted - Kind: B2 - Application number: 15/520,666 - Filed: 2015-10-21 - Published: 2017-11-02 - Granted: 2019-11-19 - Earliest claimed: 2014-11-12 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Juergen Moosburger; Andreas Ploessl - Web page: https://patentgrep.com/patent/US10483256B2 ## CPC - H10D 89/60: Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/835: {Reflective materials} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10W 72/884: {Die-attach connectors and bond wires} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An optoelectronic semiconductor device and an apparatus with an optoelectronic semiconductor device are disclosed. In an embodiment the optoelectronic semiconductor component has an emission region including a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer for generating radiation, and a protection diode region. The semiconductor component has a contact for electrically contacting the semiconductor component externally. The contact has a first contact region that is connected to the emission region in an electrically conductive manner. The contact has further a second contact region that is spaced apart from the first contact region and connected to the protection diode region in an electrically conductive manner. The first contact region and the second contact region can be electrically contacted externally by a mutual end of a connecting line. ## Claims ### Claim 1 An optoelectronic semiconductor device comprising: an emission region comprising a semiconductor layer sequence with a first semiconductor layer, a second semiconductor layer and, arranged between the first semiconductor layer and the second semiconductor layer, an active region configured to generate radiation; a protection diode region; and a contact for external electrical contacting of the optoelectronic semiconductor device, wherein the contact comprises a first contact region electrically conductively connected to the emission region, wherein the contact comprises a second contact region located at a distance from the first contact region and electrically conductively connected to the protection diode region, wherein the second contact region is not directly electrically connected to the emission region, wherein the first contact region and the second contact region are externally electrically contactable by a common end of a single connecting lead, wherein the single connecting lead is a wire bond connection, wherein the semiconductor layer sequence is arranged on a carrier, wherein the first semiconductor layer is electrically conductively connected in the emission region to a first connection layer, and wherein the first connection layer extends in places between the carrier and the emission region. ### Claim 2 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the protection diode region is a semiconductor body having a same multilayer structure as the emission region. ### Claim 3 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the first contact region and the second contact region are arranged laterally of the emission region and laterally of the protection diode region. ### Claim 4 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein, in plan view of the optoelectronic semiconductor device, the first contact region and the second contact region overlap with the protection diode region. ### Claim 5 (depends on 1) The optoelectronic semiconductor device according to claim 1, further comprising a further contact for external electrical contacting, wherein the further contact is electrically conductively connected to the emission region and the protection diode region. ### Claim 6 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the contact is arranged on a side of the carrier facing the semiconductor layer sequence. ### Claim 7 (depends on 5) The optoelectronic semiconductor device according to claim 5, wherein the contact is arranged on a side of the carrier facing the semiconductor layer sequence, and wherein the further contact is arranged on a side of the carrier facing away from the semiconductor layer sequence. ### Claim 8 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the emission region comprises at least one recess extending through the first semiconductor layer and the active region into the second semiconductor layer, wherein the second semiconductor layer at the at least one recess is electrically conductively connected to a second connection layer, and wherein the second connection layer extends in places between the emission region and the carrier. ### Claim 9 (depends on 8) The optoelectronic semiconductor device according to claim 8, wherein the second connection layer is electrically conductively connected to a back surface, facing the carrier, of the protection diode region. ### Claim 10 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein a surface of the first contact region facing away from the carrier is at a same distance or substantially at the same distance from the carrier as a surface of the second contact region facing away from the carrier. ### Claim 11 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the first contact region and the second contact region are arranged at a distance from one another of between 2 μm and 20 μm inclusive. ### Claim 12 (depends on 1) An apparatus comprising: the optoelectronic semiconductor device according to claim 1; and a land, wherein the first contact region is electrically contacted to the land by the single connecting lead. ### Claim 13 An optoelectronic semiconductor device comprising: an emission region comprising a semiconductor layer sequence with a first semiconductor layer, a second semiconductor layer and, arranged between the first semiconductor layer and the second semiconductor layer, an active region configured to generate radiation; a protection diode region; and a contact for external electrical contacting of the optoelectronic semiconductor device, wherein the contact comprises a first contact region electrically conductively connected to the emission region, wherein the contact comprises a second contact region located at a distance from the first contact region and electrically conductively connected to the protection diode region, wherein the second contact region is not directly electrically connected to the emission region, wherein the first contact region and the second contact region are externally electrically contactable by a common end of a single connecting lead, and wherein, in plan view of the optoelectronic semiconductor device, the first contact region and the second contact region overlap with the protection diode region. ### Claim 14 An optoelectronic semiconductor device comprising: an emission region comprising a semiconductor layer sequence with a first semiconductor layer, a second semiconductor layer and, arranged between the first semiconductor layer and the second semiconductor layer, an active region configured to generate radiation; a protection diode region; and a contact for external electrical contacting of the optoelectronic semiconductor device, wherein the contact comprises a first contact region electrically conductively connected to the emission region, wherein the contact comprises a second contact region located at a distance from the first contact region and electrically conductively connected to the protection diode region, wherein the second contact region is not directly electrically connected to the emission region, wherein the first contact region and the second contact region are externally electrically contactable by a common end of a single connecting lead, wherein the single connecting lead is a wire bond connection, wherein the semiconductor layer sequence is arranged on a carrier, wherein the contact is arranged on a side of the carrier facing the semiconductor layer sequence, and wherein a further contact is arranged on a side of the carrier facing away from the semiconductor layer sequence.