# US 10,483,246 B2 · Power device cassette with auxiliary emitter contact > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,246 B2 - Document ID: US10483246B2 - Status: Granted - Kind: B2 - Application number: 15/465,561 - Filed: 2017-03-21 - Published: 2017-07-06 - Granted: 2019-11-19 - Earliest claimed: 2013-10-15 - Assignees: Littlefuse, Inc. - Applicants: Littelfuse, Inc. - Inventors: Ashley Golland; Franklin J. Wakeman; Howard D. Neal - Web page: https://patentgrep.com/patent/US10483246B2 ## CPC - H10W 90/00: Package configurations - H10D 12/411: {Insulated-gate bipolar transistors [IGBT]} - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 70/20: Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40) - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 72/00: Interconnections or connectors in packages - H10W 76/13: Containers comprising a conductive base serving as an interconnection - H10W 72/874: {On different surfaces} - H10W 72/944: {Dispositions of multiple bond pads} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A press pack module includes a collector module terminal, an emitter module terminal, a gate module terminal, and an auxiliary module terminal. Each IGBT cassette within the module includes a set of shims, two contact pins, and an IGBT die. The first contact pin provides part of a first electrical connection between the gate module terminal and the IGBT gate pad. The second contact pin provides part of a second electrical connection between the auxiliary module terminal and a shim that in turn contacts the IGBT emitter pad. The electrical connection between the auxiliary emitter terminal and each emitter pad of the many IGBTs is a balanced impedance network. The balanced network is not part of the high current path through the module. By supplying a gate drive signal between the gate and auxiliary emitter terminals, simultaneous IGBT turn off in high speed and high current switching conditions is facilitated. ## Claims ### Claim 1 A method comprising: providing a power semiconductor device die so that the power semiconductor device die is disposed between a pedestal of a disc-shaped bottom plate member and a disc-shaped top plate member, wherein the disc-shaped bottom plate member, the disc-shaped top plate member, and the power semiconductor device die are parts of a press pack semiconductor device module; providing a first conductive path between a first pad on the power semiconductor device die and a first terminal of the press pack semiconductor device module, wherein the first conductive path extends through a first contact pin that contacts the power semiconductor device die, and wherein the first conductive path extends through neither the disc-shaped top plate member nor the disc-shaped bottom plate member; and providing a second conductive path between a second pad on the power semiconductor device die and a second terminal of the press pack semiconductor device module, wherein the second conductive path extends through a second contact pin that contacts the power semiconductor device die, and wherein the second conductive path extends through neither the disc-shaped top plate member nor the disc-shaped bottom plate member. ### Claim 2 (depends on 1) The method of claim 1, further comprising: providing a four-sided frame so that the four-sided frame is disposed around the pedestal, wherein the four-sided frame has a first channel through which the first contact pin extends, and wherein the four-sided frame has a second channel through which the second contact pin extends. ### Claim 3 (depends on 1) The method of claim 1, wherein the first terminal of the press pack semiconductor device module is a gate terminal, and wherein the second terminal of the press pack semiconductor device module is an auxiliary emitter terminal. ### Claim 4 (depends on 1) The method of claim 1, wherein the semiconductor device die is an Insulated Gate Bipolar Transistor (IBGT) device die, wherein the first pad on the IBGT device die is a gate pad, and wherein the second pad on the IBGT device die is an emitter pad. ### Claim 5 (depends on 1) The method of claim 1, wherein the power semiconductor device module comprises a Printed Circuit Board (PCB), wherein the first conductive path extends through a first metal layer of the PCB, wherein the second conductive path extends through a second metal layer of the PCB, and wherein the first metal layer of the PCB is different from the second metal layer of the PCB. ### Claim 6 (depends on 5) The method of claim 5, wherein the first conductive path extends through a surface mount resistor. ### Claim 7 (depends on 1) The method of claim 1, further comprising: providing a third conductive path between a third pad on the power semiconductor device die and a third terminal of the press pack semiconductor device module; and providing a fourth conductive path between a fourth pad on the power semiconductor device die and a fourth terminal of the press pack semiconductor device module. ### Claim 8 (depends on 7) The method of claim 7, wherein the third terminal of the press pack semiconductor device module is a main collector terminal, and wherein the fourth terminal of the press pack semiconductor device module is a main emitter terminal. ### Claim 9 (depends on 7) The method of claim 7, wherein the third conductive path extends through the disc-shaped top plate member, and wherein the fourth conductive path extends through the disc-shaped bottom plate member. ### Claim 10 (depends on 1) The method of claim 1, wherein the first contact pin is a first spring-loaded contact pin, and wherein the second contact pin is a second spring-loaded contact pin. ### Claim 11 (depends on 1) The method of claim 1, wherein the second conductive path between the second pad and the second terminal extends through a branched and balanced impedance network. ### Claim 12 (depends on 11) The method of claim 11, wherein a main current path through the press pack semiconductor device module does not extend through the branched and balanced impedance network. ### Claim 13 (depends on 1) The method of claim 1, further comprising: receiving a control signal between the first terminal of the press pack semiconductor device module and the second terminal of the press pack semiconductor device module.