# US 10,483,228 B2 · Apparatus for bonding semiconductor chip and method for bonding semiconductor chip

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- Number: US 10,483,228 B2
- Document ID: US10483228B2
- Status: Granted
- Kind: B2
- Application number: 16/011,648
- Filed: 2018-06-19
- Published: 2018-12-20
- Granted: 2019-11-19
- Earliest claimed: 2017-06-20
- Assignees: Protec Co., Ltd.
- Applicants: Protec Co., Ltd.
- Inventors: Geunsik Ahn
- Web page: https://patentgrep.com/patent/US10483228B2

## CPC

- H10W 72/0112: {Apparatus for manufacturing bump connectors}
- H10W 72/012: {of bump connectors, dummy bumps or thermal bumps}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 90/00: Package configurations
- H10W 72/0711: {Apparatus therefor}
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/07178: {Means for aligning}
- H10W 72/07227: {involving guiding structures, e.g. spacers or supporting members}
- H10W 72/07232: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07235: {Applying EM radiation, e.g. induction heating or using a laser}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07327: {involving guiding structures, e.g. spacers or supporting members}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07335: {Applying EM radiation, e.g. induction heating or using a laser}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/30: Die-attach connectors
- H10W 72/354: {comprising polymers}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are a semiconductor chip bonding apparatus and a semiconductor chip bonding method, and more particularly, to an apparatus and method of bonding a semiconductor chip to an upper surface of a substrate or another semiconductor chip. According to the semiconductor chip bonding apparatus and the semiconductor chip bonding method, productivity may be increased by quickly and accurately bonding a semiconductor chip to a substrate or another semiconductor chip.

## Claims

### Claim 1

A semiconductor chip bonding apparatus, comprising:
a fixing member configured to fix a lower surface of a plurality of chip-substrate assemblies in which a non-conductive resin layer and a semiconductor chip are sequentially stacked on a substrate;
a pressing member arranged above the fixing member, the pressing member comprising a transparent portion through which a laser beam penetrates;
a lifting member configured to lift or lower one of the fixing member and the pressing member relative to the other of the fixing member and the pressing member to pressurize the semiconductor chips of the plurality of chip-substrate assemblies such that solder bumps of one of the semiconductor chips and the substrate penetrate the non-conductive resin layer to electrically contact the other of the semiconductor chips and the substrate; and
a laser head configured to irradiate the laser beam to the chip-substrate assemblies pressurized by using the pressing member, through the transparent portion of the pressing member, so as to bond solder bumps of one of the semiconductor chips and the substrate to the other of the semiconductor chips and the substrate,
wherein the pressing member further comprises a mask portion that is formed of an opaque material and supports the transparent portion,
wherein the transparent portion of the pressing member is disposed in areas respectively corresponding to the plurality of chip-substrate assemblies,
wherein the mask portion is disposed in a corresponding area between the plurality of chip-substrate assemblies.

### Claim 2 (depends on 1)

The semiconductor chip bonding apparatus of claim 1, wherein the laser head sequentially irradiates a laser beam to each of the plurality of chip-substrate assemblies.

### Claim 3 (depends on 1)

The semiconductor chip bonding apparatus of claim 1, wherein the laser head simultaneously irradiates a laser beam to at least two of the plurality of chip-substrate assemblies.

### Claim 4 (depends on 2)

The semiconductor chip bonding apparatus of claim 2, further comprising a head transporting member configured to transport the laser head.

### Claim 5

A semiconductor chip bonding method, comprising:
(a) forming a non-conductive resin layer on one of a lower surface of a semiconductor chip and an upper surface of a substrate;
(b) disposing the semiconductor chip on the substrate to provide a plurality of chip-substrate assemblies in which the substrate, the non-conductive resin layer, and the semiconductor chip are sequentially stacked;
(c) fixing the plurality of chip-substrate assemblies by using a fixing member to dispose the plurality of chip-substrate assemblies on the fixing member;
(d) making one of a pressing member and the fixing member draw near the other of the pressing member and the fixing member by using a lifting member such that solder bumps of one of the semiconductor chip and the substrate penetrate the non-conductive resin layer to be in electrical contact with the other of the semiconductor chip and the substrate, wherein the pressing member is disposed above the fixing member and comprises a transparent portion through which a laser beam penetrates, wherein (d) is performed by using the pressing member comprising the transparent portion disposed in areas respectively corresponding to the plurality of chip-substrate assemblies, and a mask portion that is disposed in a corresponding area between the plurality of chip-substrate assemblies is formed of an opaque material and supports the transparent portion; and
(e) bonding solder bumps of one of the semiconductor chip and the substrate to the other of the semiconductor chip and the substrate by irradiating a laser beam to the chip-substrate assemblies between the pressing member and the fixing member by using a laser head through the transparent portion of the pressing member.

### Claim 6 (depends on 5)

The semiconductor chip bonding method of claim 5, wherein (e) is performed by sequentially irradiating a laser beam to each of the chip-substrate assemblies by using the laser head.

### Claim 7 (depends on 5)

The semiconductor chip bonding method of claim 5, wherein (e) is performed by simultaneously irradiating a laser beam to at least two of the chip-substrate assemblies by using the laser head.

### Claim 8 (depends on 5)

The semiconductor chip bonding method of claim 5, wherein (a) is performed by stacking the non-conductive resin layer on the upper surface of the substrate while the substrate is fixed to the fixing member, and
wherein (b) is performed by disposing each of a plurality of semiconductor chips on the non-conductive resin layer on the substrate after completing (a), and
wherein (c) is completed by performing (a) and (b).

### Claim 9 (depends on 5)

The semiconductor chip bonding method of claim 5, wherein (a) is performed by attaching the non-conductive resin layer to the lower surface of the semiconductor chip, and
wherein (b) is performed by disposing the plurality of semiconductor chips, to which the non-conductive resin layer is attached in (a), on the upper surface of the substrate, while the substrate is fixed to the fixing member, and
wherein (c) is completed by performing (a) and (b).