# US 10,483,223 B2 · Semiconductor device having a large area interconnect or pad

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- Number: US 10,483,223 B2
- Document ID: US10483223B2
- Status: Granted
- Kind: B2
- Application number: 15/672,578
- Filed: 2017-08-09
- Published: 2018-02-15
- Granted: 2019-11-19
- Earliest claimed: 2016-08-10
- Assignees: Ablic Inc.
- Applicants: SII Semiconductor Corporation
- Inventors: Hiroyuki Utsunomiya
- Web page: https://patentgrep.com/patent/US10483223B2

## CPC

- H10W 20/42: Vias, e.g. via plugs
- H10W 72/90: Bond pads, in general
- H10W 20/031: {of conductive parts of the interconnections}
- H10W 72/01951: {Changing the shapes of bond pads}
- H10W 72/922: {Bond pads being integral with underlying chip-level interconnections}
- H10W 72/931: {Shapes of bond pads}
- H10W 72/932: {Plan-view shape, i.e. in top view}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A slit is formed along a coupling portion at which a second interconnect is connected to a relatively large area interconnect or pad. Since tensile stress of a resist that is caused due to baking, UV curing, or other treatments in photolithography can be dispersed, contraction and deformation of the resist at an end of the second interconnect can be alleviated, and dimensions and shape of a interconnect, which is formed by etching, can be stabilized.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor substrate;
an insulating film on a surface of the semiconductor substrate;
a first interconnect on the insulating film and having a first width in a first direction and a second width in a second direction, the second direction orthogonal to the first direction;
a second interconnect having a length in the second direction of equal to or less than 20 microns and having a third width in the first direction, wherein the third width is smaller than the first width and the second width, and the second interconnect is coupled to the first interconnect at a first coupling portion between the first interconnect and one end of the second interconnect, the first coupling portion extending in the first direction;
a slit in the first interconnect spaced away from the first coupling portion by a length of equal to or less than 20 microns, and having a fourth width that is half or more of the third width; and
a third interconnect coupled to a terminal end of the second interconnect on an opposite side to the first coupling portion, wherein the third interconnect comprises a same layer as the first interconnect and the second interconnect and extends along the first direction.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising a plurality of slits extending in the first direction, at least two of which extend along a common center line in the first direction.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1;
wherein the second interconnect comprises a plurality of second interconnects on one side of the first interconnect, and
wherein the slit comprises a plurality of slits each along the first coupling portion between the first interconnect and the one end of each of the plurality of second interconnects.

### Claim 4

A semiconductor device, comprising:
a semiconductor substrate;
an insulating film on a surface of the semiconductor substrate;
a pad on the insulating film and having a first width in a first direction and a second width in a second direction, the second direction orthogonal to the first direction;
a second interconnect having a length in the second direction of equal to or less than 20 microns and having a third width in the first direction, wherein the third width is smaller than the first width and the second width, and the second interconnect is coupled to the pad at a first coupling portion between the pad and one end of the second interconnect, the first coupling portion extending in the first direction;
a slit in the pad at a location away from the first coupling portion by a length of equal to or less than 20 microns, and having a fourth width which is half or more of the third width; and
a third interconnect coupled to a terminal end of the second interconnect on an opposite side to the one end and extending along the first direction,
wherein the third interconnect comprises a same layer as the pad and the second interconnect.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, further comprising a plurality of slits in the first direction, at least two of which extend along a common center line in the first direction.

### Claim 6 (depends on 4)

The semiconductor device according to claim 4;
wherein the second interconnect comprises a plurality of second interconnects on one side of the pad, and
wherein the slit comprises a plurality of slits each along the first coupling portion between the pad and the one end of each of the plurality of second interconnects.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the slit is along a line extending from the second interconnect in the second direction.

### Claim 8 (depends on 2)

The semiconductor device according to claim 2, wherein the slit is along a line extending from the second interconnect in the second direction.