# US 10,483,207 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,207 B2 - Document ID: US10483207B2 - Status: Granted - Kind: B2 - Application number: 15/667,977 - Filed: 2017-08-03 - Published: 2018-02-08 - Granted: 2019-11-19 - Earliest claimed: 2016-08-03 - Assignees: Toshiba Memory Corporation - Applicants: Toshiba Memory Corporation - Inventors: Masatoshi Watarai; Masanori Hatakeyama; Takuya Kusaka; Kazunori Masuda; Masato Endo; Koichi Fukuda; Masato Sugawara - Web page: https://patentgrep.com/patent/US10483207B2 ## CPC - H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/10: characterised by the top-view layout - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10B: ELECTRONIC MEMORY DEVICES ## Abstract According to one embodiment, the insulating layer is provided on the terrace portions. The plurality of contact portions extend through the insulating layer in the stacking direction and contact the terrace portions. The second columnar portion extends through the insulating layer and through the second stacked portion in the stacking direction, and includes a second semiconductor body contacting the first semiconductor region. The first insulating portion divides the first semiconductor region in the first direction. The first insulating portion is provided under a boundary portion between the first stacked portion and the second stacked portion. ## Claims ### Claim 1 A semiconductor device, comprising: a first semiconductor region of a first conductivity type; a stacked body provided on the first semiconductor region, the stacked body including a plurality of electrode layers stacked with an insulating body interposed, the stacked body including a first stacked portion and a second stacked portion, the plurality of electrode layers of the second stacked portion including a plurality of terrace portions arranged in a staircase configuration with a level difference in a first direction; a first columnar portion extending through the first stacked portion in a stacking direction of the stacked body and including a first semiconductor body contacting the first semiconductor region; an insulating layer provided on the plurality of terrace portions; a plurality of contact portions extending through the insulating layer in the stacking direction and contacting the plurality of terrace portions; a second columnar portion extending through the insulating layer and through the second stacked portion in the stacking direction, and including a second semiconductor body contacting the first semiconductor region; and a first insulating portion dividing the first semiconductor region in the first direction, the first insulating portion provided under a boundary portion between the first stacked portion and the second stacked portion. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, further comprising a second semiconductor region of a second conductivity type provided under the first semiconductor region, and contacting the first semiconductor region. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein a bottom of the first insulating portion reaches the second semiconductor region. ### Claim 4 (depends on 2) The semiconductor device according to claim 2, wherein the first semiconductor region is a P-type semiconductor region, and the second semiconductor region is an N-type semiconductor region. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the first insulating portion extends in a second direction crossing the first direction. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, further comprising a separation portion extending in the stacking direction and the first direction, and dividing the stacked body in a second direction crossing the first direction. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, wherein the separation portion includes an interconnect portion contacting the first semiconductor region. ### Claim 8 (depends on 7) The semiconductor device according to claim 7, further comprising a second insulating portion provided along the first direction at a side of a lower end portion of the interconnect portion, the second insulating portion separating the first semiconductor region under the interconnect portion from the first semiconductor region under the plurality of terrace portions. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, further comprising a second semiconductor region of a second conductivity type provided under the first semiconductor region, and contacting the first semiconductor region. ### Claim 10 (depends on 9) The semiconductor device according to claim 9, wherein a bottom of the second insulating portion reaches the second semiconductor region. ### Claim 11 (depends on 7) The semiconductor device according to claim 7, wherein the separation portion includes a first portion dividing the first stacked portion, and a second portion dividing the second stacked portion, the first portion includes the interconnect portion, and the second portion does not include the interconnect portion. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, wherein the first columnar portion includes a first stacked film provided between the first semiconductor body and one of the plurality of electrode layers, and the second columnar portion includes a second stacked film provided between the second semiconductor body and one of the plurality of electrode layers, and being of a same material as the first stacked film of the first columnar portion. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein the first stacked film and the second stacked film include a charge storage portion. ### Claim 14 (depends on 13) The semiconductor device according to claim 13, wherein the charge storage portion extends to be continuous in the stacking direction. ### Claim 15 (depends on 1) The semiconductor device according to claim 1, further comprising a charge storage portion provided between the first columnar portion and one of the plurality of electrode layers.