# US 10,483,205 B2 · Contact using multilayer liner > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,205 B2 - Document ID: US10483205B2 - Status: Granted - Kind: B2 - Application number: 15/901,979 - Filed: 2018-02-22 - Published: 2018-06-28 - Granted: 2019-11-19 - Earliest claimed: 2016-01-20 - Assignees: Globalfoundries Inc. - Applicants: Globalfoundries Inc. - Inventors: Donghun Kang; Neal A. Makela; Christopher C. Parks - Web page: https://patentgrep.com/patent/US10483205B2 ## CPC - H10W 20/425: {Barrier, adhesion or liner layers} - H10W 20/035: {combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers} - H10W 20/081: {by forming openings in the dielectric parts} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers. ## Claims ### Claim 1 A method comprising: patterning an opening within a substrate of a multi-layer integrated circuit device, said substrate comprising silicon; performing a cleaning process of the opening; forming a lower blocking layer within the opening, and the lower blocking layer contacts a surface of the opening, wherein the cleaning process leaves oxygen and fluorine particles within an area of the substrate adjacent the lower blocking layer; forming a middle liner layer within the opening, and the middle liner layer contacts the lower blocking layer and comprises an oxide; forming an upper blocking layer within the opening, and the upper blocking layer contacts the middle liner layer, and the middle liner layer is formed to be between the lower blocking layer and the upper blocking layer; and forming a conductor layer within the opening, and the conductor layer contacts the upper blocking layer and comprises a conductive contact within the multi-layer integrated circuit device. ### Claim 2 (depends on 1) The method according to claim 1, the lower blocking layer and the upper blocking layer are formed of titanium composite materials, including titanium nitride (TiN), titanium silicide (TiSi), titanium carbide (TiC), and titanium alumide (TiAl)) when the middle liner layer comprises titanium (Ti); the lower blocking layer and the upper blocking layer are formed of tungsten composite materials including fluorine-free tungsten (FFW), tungsten nitride (WN), and tungsten carbide (WC) when the middle liner layer comprises tungsten (W); the lower blocking layer and the upper blocking layer are formed of tantalum composite materials including tantalum nitride (TaN) when the middle liner layer comprises tantalum (Ta); and the lower blocking layer and the upper blocking layer are formed of nickel composite materials including nickel silicide when the middle liner layer comprises nickel (Ni). ### Claim 3 (depends on 1) The method according to claim 1, the upper blocking layer is formed thicker than the lower blocking layer. ### Claim 4 (depends on 1) The method according to claim 1, the upper blocking layer is formed at least three times thicker than the lower blocking layer. ### Claim 5 (depends on 1) The method according to claim 1, the oxide comprises the oxygen scavenged from the surface of the opening. ### Claim 6 A method comprising: patterning an opening within a substrate of a multi-layer integrated circuit device, said substrate comprising silicon; performing a cleaning process of the opening, wherein the cleaning process leaves an amount of contaminants, including oxygen and fluorine particles, on a surface of the opening; forming a lower blocking layer within the opening; forming a middle liner layer within the opening, and the middle liner layer contacts the lower blocking layer and comprises an oxide; forming an upper blocking layer within the opening, and the upper blocking layer contacts the middle liner layer, and the middle liner layer is formed to be between the lower blocking layer and the upper blocking layer; and forming a conductor layer within the opening, and the conductor layer contacts the upper blocking layer and comprises a conductive contact within the multi-layer integrated circuit device. ### Claim 7 (depends on 6) The method according to claim 6, the lower blocking layer and the upper blocking layer are formed of titanium composite materials, including titanium nitride (TiN), titanium silicide (TiSi), titanium carbide (TiC), and titanium alumide (TiAl)) when the middle liner layer comprises titanium (Ti); the lower blocking layer and the upper blocking layer are formed of tungsten composite materials including fluorine-free tungsten (FFW), tungsten nitride (WN), and tungsten carbide (WC) when the middle liner layer comprises tungsten (W); the lower blocking layer and the upper blocking layer are formed of tantalum composite materials including tantalum nitride (TaN) when the middle liner layer comprises tantalum (Ta); and the lower blocking layer and the upper blocking layer are formed of nickel composite materials including nickel silicide when the middle liner layer comprises nickel (Ni). ### Claim 8 (depends on 6) The method according to claim 6, the upper blocking layer is formed thicker than the lower blocking layer. ### Claim 9 (depends on 6) The method according to claim 6, the upper blocking layer is formed at least three times thicker than the lower blocking layer. ### Claim 10 (depends on 6) The method according to claim 6, the oxide comprises the oxygen scavenged from the surface of the opening. ### Claim 11 (depends on 6) The method according to claim 6, wherein the cleaning process leaves oxygen and fluorine particles within an area of the substrate adjacent the lower blocking layer. ### Claim 12 A method comprising: patterning an opening within a substrate of a multi-layer integrated circuit device, said substrate comprising silicon; performing a cleaning process of the opening, wherein the cleaning process comprises simultaneous exposure of the substrate to H2, NF3 and NH3 plasma by-products, and wherein the cleaning process leaves an amount of contaminants, including oxygen and fluorine particles, on a surface of the opening; forming a lower blocking layer within the opening, and the lower blocking layer contacts the surface of the opening; forming a middle liner layer within the opening, and the middle liner layer contacts the lower blocking layer; forming an upper blocking layer within the opening, and the upper blocking layer contacts the middle liner layer, and the middle liner layer is formed to be between the lower blocking layer and the upper blocking layer; and forming a conductor layer within the opening, and the conductor layer contacts the upper blocking layer and comprises a conductive contact within the multi-layer integrated circuit device. ### Claim 13 (depends on 12) The method according to claim 12, the lower blocking layer and the upper blocking layer are formed of titanium composite materials, including titanium nitride (TiN), titanium silicide (TiSi), titanium carbide (TiC), and titanium alumide (TiAl)) when the middle liner layer is titanium (Ti); the lower blocking layer and the upper blocking layer are formed of tungsten composite materials including fluorine-free tungsten (FFW), tungsten nitride (WN), and tungsten carbide (WC) when the middle liner layer is tungsten (W); the lower blocking layer and the upper blocking layer are formed of tantalum composite materials including tantalum nitride (TaN) when the middle liner layer is tantalum (Ta); and the lower blocking layer and the upper blocking layer are formed of nickel composite materials including nickel silicide when the middle liner layer is nickel (Ni). ### Claim 14 (depends on 12) The method according to claim 12, the upper blocking layer is formed thicker than the lower blocking layer. ### Claim 15 (depends on 12) The method according to claim 12, the upper blocking layer is formed at least three times thicker than the lower blocking layer. ### Claim 16 (depends on 12) The method according to claim 12, the middle liner layer comprises an oxide. ### Claim 17 (depends on 16) The method according to claim 16, the oxide comprises the oxygen scavenged from the surface of the opening.