# US 10,483,201 B1 · Semiconductor structure and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,201 B1 - Document ID: US10483201B1 - Status: Granted - Kind: B1 - Application number: 16/171,700 - Filed: 2018-10-26 - Granted: 2019-11-19 - Earliest claimed: 2018-10-26 - Assignees: Nanya Technology Corporation - Applicants: Nanya Technology Corporation - Inventors: Ping Hsu - Web page: https://patentgrep.com/patent/US10483201B1 ## CPC - H10W 20/493: {Fuses, i.e. interconnections changeable from conductive to non-conductive} - H01H 85/08: characterised by the shape or form of the fusible member - H10D 62/115: {Dielectric isolations, e.g. air gaps} - H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes - H10P 14/3244: {Layer structure} - H10W 20/031: {of conductive parts of the interconnections} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H01H: ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B7/10; electrolytic self-interrupters H01G9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K17/00) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a semiconductor layer, a first conductor, a second conductor and a fuse. The first conductor is disposed over the semiconductor layer. The second conductor is disposed over the first conductor. The fuse is disposed between the first conductor and the second conductor, wherein the fuse includes a conductive portion and a non-conductive portion surrounded by the conductive portion, the conductive portion is in contact with the first conductor and the second conductor, and the non-conductive portion is in contact with the second conductor. ## Claims ### Claim 1 A semiconductor structure, comprising: a semiconductor layer; a first conductor disposed over the semiconductor layer; a second conductor disposed over the first conductor; and a fuse disposed between the first conductor and the second conductor, wherein the fuse includes a conductive portion and a non-conductive portion surrounded by the conductive portion, the conductive portion is in contact with the first conductor and the second conductor, and the non-conductive portion is in contact with the second conductor. ### Claim 2 (depends on 1) The semiconductor structure of claim 1, wherein the non-conductive portion is in contact with an upper surface of the first conductor and a bottom surface of the second conductor. ### Claim 3 (depends on 1) The semiconductor structure of claim 1, wherein the conductive portion extends vertically from an upper surface of the first conductor to a bottom surface of the second conductor. ### Claim 4 (depends on 1) The semiconductor structure of claim 1, wherein the conductive portion is surrounded by a dielectric layer disposed over the semiconductor layer. ### Claim 5 (depends on 1) The semiconductor structure of claim 1, wherein the non-conductive portion includes an air gap in contact with the second conductor. ### Claim 6 (depends on 5) The semiconductor structure of claim 5, wherein the air gap is in contact with an upper surface of the first conductor. ### Claim 7 (depends on 5) The semiconductor structure of claim 5, wherein the non-conductive portion includes a non-conductive layer in a solid state, the air gap is disposed over the non-conductive layer, and the non-conductive layer is disposed between the air gap and the first conductor. ### Claim 8 (depends on 1) The semiconductor structure of claim 1, wherein the non-conductive portion includes a non-conductive layer in contact with a bottom surface of the second conductor, and the non-conductive layer is in a solid state. ### Claim 9 (depends on 8) The semiconductor structure of claim 8, wherein the non-conductive layer is in contact with an upper surface of the first conductor. ### Claim 10 (depends on 8) The semiconductor structure of claim 8, wherein a material of the non-conductive layer is different from a material of a dielectric layer surrounding the conductive portion. ### Claim 11 (depends on 10) The semiconductor structure of claim 10, wherein at least a portion of the non-conductive layer is melted. ### Claim 12 (depends on 1) The semiconductor structure of claim 1, wherein the first conductor comprises an anode pattern, and the second conductor comprises a cathode pattern. ### Claim 13 (depends on 1) The semiconductor structure of claim 1, wherein the semiconductor layer includes a semiconductor substrate and a bottom layer disposed over the semiconductor substrate. ### Claim 14 (depends on 1) The semiconductor structure of claim 1, wherein the conductive portion has an outer surface, and the outer surface extends continuously from the first conductor to the second conductor. ### Claim 15 A method for manufacturing a semiconductor structure, comprising: forming a first conductor over a semiconductor layer; forming a dielectric layer over the semiconductor layer; forming a first contact hole through the dielectric layer to the first conductor; forming a conductive portion to fill the first contact hole; forming a second contact hole through the conductive portion; and forming a second conductor over the conductive portion to be in contact with the conductive portion. ### Claim 16 (depends on 15) The method of claim 15, wherein the second contact hole is formed through the conductive portion to an upper surface of the first conductor. ### Claim 17 (depends on 15) The method of claim 15, wherein the second contact hole includes an air gap in contact with the second conductor and the first conductor. ### Claim 18 (depends on 15) The method of claim 15, further comprising: forming a non-conductive layer and an air gap disposed over the non-conductive layer in the second contact hole, wherein the non-conductive layer is in contact with an upper surface of the first conductor, and the air gap is in contact with the second conductor and the non-conductive layer. ### Claim 19 (depends on 15) The method of claim 15, further comprising: forming a non-conductive layer to fill the second contact hole, wherein the non-conductive layer is in contact with the first conductor and the second conductor. ### Claim 20 (depends on 15) The method of claim 15, wherein the first contact hole has an inner surface, and the inner surface extends continuously from the first conductor to the second conductor.