# US 10,483,191 B2 · Bottom package exposed die MEMS pressure sensor integrated circuit package design

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- Number: US 10,483,191 B2
- Document ID: US10483191B2
- Status: Granted
- Kind: B2
- Application number: 15/212,107
- Filed: 2016-07-15
- Published: 2018-01-18
- Granted: 2019-11-19
- Earliest claimed: 2016-07-15
- Assignees: STMicroelectronics S.r.l.
- Applicants: STMicroelectronics, Inc.
- Inventors: Aaron Cadag; Frederick Arellano; Ernesto Antilano, Jr.
- Web page: https://patentgrep.com/patent/US10483191B2

## CPC

- H10W 70/421: {Shapes or dispositions}
- B81B 7/0058: {for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations}
- B81C 1/00825: {Protect against mechanical threats, e.g. against shocks, or residues (B81C1/00261 take precedence)}
- H10W 72/073: {of die-attach connectors}
- H10W 72/075: {of bond wires}
- H10W 72/30: Die-attach connectors
- H10W 72/50: Bond wires
- H10W 72/851: {Dispositions of multiple connectors or interconnections}
- H10W 74/016: {using moulds}
- H10W 74/017: {Auxiliary layers for moulds, e.g. release layers or layers preventing residue}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/129: {forming a chip-scale package [CSP]}
- H10W 90/811: {Multiple chips on leadframes}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- B81B 2201/0264: Pressure sensors
- B81B 2207/012: the micromechanical device and the control or processing electronics being separate parts in the same package
- B81B 2207/07: Interconnects
- B81B 2207/098: Arrangements not provided for in groups B81B2207/092 - B81B2207/097
- B81C 2203/01: Packaging MEMS
- B81C 2203/032: Gluing
- B81C 2203/0792: Forming interconnections between the electronic processing unit and the micromechanical structure
- H10W 72/354: {comprising polymers}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements}
- H10W 72/5473: {multiple bond wires connected to a common bond pad}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/877: {Bump connectors and die-attach connectors}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 76/17: characterised by their materials
- H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/732: {between stacked chips}
- H10W 90/752: {between stacked chips}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)

## Abstract

A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound.

## Claims

### Claim 1

A package containing a MEMS sensor circuit, comprising:
a lead frame having an open region in a middle of the lead frame and a first surface exposed to an ambient atmosphere;
a monolithic MEMS semiconductor die being laterally adjacent to the lead frame, the monolithic MEMS semiconductor die having an exposed outer surface thereof exposed to the ambient atmosphere, the exposed outer surface having a plurality of apertures, the plurality of apertures exposing an internal chamber of the monolithic MEMS semiconductor die to the ambient atmosphere;
a second semiconductor die attached to the monolithic MEMS semiconductor die;
a first plurality of bonding wires connected between the lead frame and the second semiconductor die;
a second plurality of bonding wires connected at least between one of the lead frame and the monolithic MEMS semiconductor die or the monolithic MEMS semiconductor die and the second semiconductor die; and
a molding compound partially covering the monolithic MEMS semiconductor die and the lead frame and encapsulating the second semiconductor die and the plurality of bonding wires, a first surface of the molding compound being flush with the exposed outer surface of the monolithic MEMS semiconductor die and also with the first surface of the lead frame, the exposed outer surface of the monolithic MEMS semiconductor die being a semiconductor material, and an opening of the apertures being flush with the first surface of the molding compound.

### Claim 2 (depends on 1)

The MEMS sensor package of claim 1 further comprising:
a third plurality of bonding wires connected between the lead frame and another one of the second semiconductor die or the monolithic MEMS semiconductor die.

### Claim 3 (depends on 1)

The MEMS sensor package of claim 1, wherein the monolithic MEMS semiconductor die further comprises:
a sensing component in the internal chamber.

### Claim 4 (depends on 3)

The MEMS sensor package of claim 3, wherein the sensing component is exposed to the ambient atmosphere through the plurality of apertures.

### Claim 5 (depends on 3)

The MEMS sensor package of claim 3, wherein the sensing component is a pressure sensor.

### Claim 6 (depends on 1)

The MEMS sensor package of claim 1, wherein the second semiconductor die attached to the monolithic MEMS semiconductor die further comprises:
using an adhesive film to attach the second semiconductor die to the monolithic MEMS semiconductor die.

### Claim 7 (depends on 1)

The MEMS sensor package of claim 1, wherein the monolithic MEMS semiconductor die is placed in the open region of the lead frame.

### Claim 8

A pressure sensor package, comprising:
a monolithic MEMS semiconductor die having a first surface thereof exposed to an ambient atmosphere, the first surface thereof exposed to the ambient atmosphere of the monolithic MEMS semiconductor die having a plurality of apertures, the plurality of apertures exposing an internal chamber of the monolithic MEMS semiconductor die to the ambient atmosphere;
a second semiconductor die attached to the monolithic MEMS semiconductor die;
a lead frame having an open region in a middle of the lead frame and exposed to the ambient atmosphere, the lead frame being laterally adjacent to the MEMS semiconductor die, the MEMS semiconductor die being positioned in the open region of the lead frame;
a plurality of electronic connectors connecting the lead frame to the second semiconductor die; and
a molding compound partially covering the monolithic MEMS semiconductor die and the lead frame and encapsulating the second semiconductor die and the plurality of electronic connectors, the molding compound having an outer surface, the first surface of the monolithic MEMS semiconductor die exposed to the ambient atmosphere being flush with an outer surface of the molding compound, the first surface of the monolithic MEMS semiconductor die being a semiconductor material.

### Claim 9 (depends on 8)

The pressure sensor package of claim 8, wherein the electronic connectors are selected from the group comprising:
a plurality of bonding wires, solder ball connectors, or metal pillar connectors.

### Claim 10 (depends on 8)

The pressure sensor package of claim 8, wherein the monolithic MEMS semiconductor die further comprises:
a sensing component.

### Claim 11 (depends on 10)

The pressure sensor package of claim 10, wherein the internal chamber contains the sensing component.

### Claim 12 (depends on 8)

The pressure sensor package of claim 8, wherein the second semiconductor die attached to the monolithic MEMS semiconductor die further comprises:
using an adhesive film to attach the second semiconductor die to the monolithic MEMS semiconductor die.

### Claim 13 (depends on 8)

The pressure sensor package of claim 8, wherein the second semiconductor die attached to the monolithic MEMS semiconductor die further comprises:
forming an electric connection between the second semiconductor die and the monolithic MEMS semiconductor die.

### Claim 14

A package containing a MEMS sensor circuit, comprising:
a lead frame having an open region in a middle of the lead frame and exposed to an ambient atmosphere;
a monolithic MEMS semiconductor die having an exposed outer surface thereof exposed to the ambient atmosphere, the exposed outer surface having a plurality of apertures, the plurality of apertures exposing an internal chamber of the monolithic MEMS semiconductor die to the ambient atmosphere;
a second semiconductor die attached to the monolithic MEMS semiconductor die;
a plurality of first electronic connectors connected between the lead frame and the second semiconductor die; and
a molding compound partially covering the monolithic MEMS semiconductor die and the lead frame and encapsulating the second semiconductor die and the first electronic connectors, the molding compound having an outer surface, the exposed outer surface of the monolithic MEMS semiconductor die being exposed on the outer surface of the molding compound, an opening of the apertures being flush with a first surface of the molding compound, and a semiconductor material of the monolithic MEMS semiconductor die being flush with the first surface of the molding compound.

### Claim 15 (depends on 14)

The MEMS sensor package of claim 14, wherein the monolithic MEMS semiconductor die is adjacent to the lead frame.

### Claim 16 (depends on 14)

The MEMS sensor package of claim 14, the lead frame is positioned on same side of the MEMS sensor package from the monolithic MEMS semiconductor die.

### Claim 17 (depends on 14)

The MEMS sensor package of claim 14, wherein the first electronic connectors are selected from the group comprising:
a plurality of bonding wires, solder ball connectors, or metal pillar connectors.

### Claim 18 (depends on 14)

The MEMS sensor package of claim 14, wherein the monolithic MEMS semiconductor die includes a pressure sensor located in the internal chamber.