# US 10,483,186 B2 · Semiconductor device with heat radiator

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- Number: US 10,483,186 B2
- Document ID: US10483186B2
- Status: Granted
- Kind: B2
- Application number: 16/160,295
- Filed: 2018-10-15
- Published: 2019-05-09
- Granted: 2019-11-19
- Earliest claimed: 2017-11-08
- Assignees: Toyota Jidosha Kabushiki Kaisha
- Applicants: Toyota Jidosha Kabushiki Kaisha
- Inventors: Masataka Deguchi
- Web page: https://patentgrep.com/patent/US10483186B2

## CPC

- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- F28F 21/02: of carbon, e.g. graphite
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/25: characterised by their materials
- H10W 40/778: {in encapsulations}
- H10W 70/20: Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40)
- H10W 76/138: having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
- F28D 2021/0029: {Heat sinks}
- H10W 72/07351: {characterised by changes in properties of the die-attach connectors during connecting}
- H10W 72/30: Die-attach connectors
- H10W 72/381: {Auxiliary members}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- F28F: DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION (water and air traps, air venting F16)
- F28D: HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT (fluid heaters having heat generating means and heat transferring means F24H; furnaces F27; details of heat-exchange apparatus of general)

## Abstract

A first inner heat conductor may include a plurality of first graphite layers. A second inner heat conductor may include a plurality of second graphite layers. The plurality of first graphite layers may be stacked in a first direction which is orthogonal to a direction in which a semiconductor element and a first heat radiator are arranged. The plurality of second graphite layers may be stacked in the direction in which the semiconductor element and the first heat radiator are arranged, or may be stacked in a second direction which is orthogonal to the direction in which the semiconductor element and the first heat radiator are arranged and orthogonal to the first direction.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor element; and
a first heat radiator connected to a first surface of the semiconductor element,
wherein
the first heat radiator comprises:
a first outer heat conductor constituted of metal and connected to the first surface of the semiconductor element;
a first inner heat conductor disposed in the first outer heat conductor; and
a second inner heat conductor disposed in the first outer heat conductor and stacked on the first inner heat conductor in a direction in which the semiconductor element and the first heat radiator are arranged,
the first inner heat conductor comprises a plurality of first graphite layers,
the second inner heat conductor comprises a plurality of second graphite layers,
the plurality of first graphite layers is stacked in a first direction which is orthogonal to the direction in which the semiconductor element and the first heat radiator are arranged, and
the plurality of second graphite layers is stacked in the direction in which the semiconductor element and the first heat radiator are arranged, or is stacked in a second direction which is orthogonal to the direction in which the semiconductor element and the first heat radiator are arranged and orthogonal to the first direction.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a second heat radiator connected to a second surface opposite to the first surface of the semiconductor element;
wherein
the second heat radiator comprises:
a second outer heat conductor constituted of metal and connected to the second surface of the semiconductor element;
a third inner heat conductor disposed in the second outer heat conductor, and
a fourth inner heat conductor disposed in the second outer heat conductor and stacked on the third inner heat conductor in a direction in which the semiconductor element and the second heat radiator are arranged,
the third inner heat conductor comprises a plurality of third graphite layers,
the fourth inner heat conductor comprises a plurality of fourth graphite layers,
the plurality of third graphite layers is stacked in a third direction which is orthogonal to the direction in which the semiconductor element and the second heat radiator are arranged, and
the plurality of fourth graphite layers is stacked in the direction in which the semiconductor element and the second heat radiator are arranged, or is stacked in a fourth direction which is orthogonal to the direction in which the semiconductor element and the second heat radiator are arranged and orthogonal to the third direction.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a second heat radiator connected to a second surface opposite to the first surface of the semiconductor element;
wherein the second heat radiator is a solid metal member.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein
the semiconductor element, the first heat radiator and the second heat radiator are scaled by a sealing resin.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein
the first outer heat conductor comprises a projection projecting outward.