# US 10,483,183 B2 · Semiconductor device

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- Number: US 10,483,183 B2
- Document ID: US10483183B2
- Status: Granted
- Kind: B2
- Application number: 16/164,112
- Filed: 2018-10-18
- Published: 2019-05-23
- Granted: 2019-11-19
- Earliest claimed: 2017-11-22
- Assignees: Toyota Jidosha Kabushiki Kaisha
- Applicants: Toyota Jidosha Kabushiki Kaisha
- Inventors: Norimune Orimoto
- Web page: https://patentgrep.com/patent/US10483183B2

## CPC

- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10P 74/277: {Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers}
- H10W 40/25: characterised by their materials
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/778: {in encapsulations}
- H10W 70/20: Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40)
- H10W 40/70: Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
- H10W 72/07351: {characterised by changes in properties of the die-attach connectors during connecting}
- H10W 72/30: Die-attach connectors
- H10W 72/381: {Auxiliary members}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device may include a semiconductor element; a temperature detecting element provided at a central part of a surface of the semiconductor element, and a heat conductor jointed to the surface of the semiconductor element via a jointing element. The jointing element may include a central part positioned over the temperature detecting element, and a peripheral part positioned on a periphery of the central part of the jointing element. The heat conductor may include a metal part being in contact with the central part of the jointing element, and a graphite part being in contact with the peripheral part of the jointing element.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor element;
a temperature detecting element provided at a central part of a surface of the semiconductor element; and
a heat conductor jointed to the surface of the semiconductor element via a jointing element,
wherein
the jointing element comprises a central part positioned over the temperature detecting element, and a peripheral part positioned on a periphery of the central part of the jointing element, and
the heat conductor comprises a metal part being in contact with the central part of the jointing element, and a graphite part being in contact with the peripheral part of the jointing element.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a plurality of metal wires embedded in the jointing element,
wherein the plurality of metal wires is arranged along the peripheral part of the jointing element when viewed in a direction orthogonal to the surface of the semiconductor element.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
a plurality of recesses is provided in the graphite part, and
the jointing element fills each of the recesses.

### Claim 4

A semiconductor device comprising:
a semiconductor element;
a temperature detecting element provided at a central part of a surface of the semiconductor element;
a heat conductor jointed to the surface of the semiconductor element via a jointing element; and
a plurality of metal wires embedded in the jointing element,
wherein
the jointing element comprises a central part positioned over the temperature detecting element, and a peripheral part positioned on a periphery of the central part of the jointing element, and
the plurality of metal wires is arranged along the peripheral part of the jointing element when viewed in a direction orthogonal to the surface of the semiconductor element.