# US 10,483,179 B2 · Semiconductor device with sealing portion to suppress connection corrosion > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,179 B2 - Document ID: US10483179B2 - Status: Granted - Kind: B2 - Application number: 15/821,827 - Filed: 2017-11-23 - Published: 2018-07-19 - Granted: 2019-11-19 - Earliest claimed: 2017-01-17 - Assignees: Fuji Electric Co., Ltd. - Applicants: Fuji Electric Co., Ltd. - Inventors: Yoshihiro Yasuda - Web page: https://patentgrep.com/patent/US10483179B2 ## CPC - H10W 74/47: comprising organic materials, e.g. plastics or resins - H10W 70/417: {Bonding materials between chips and die pads} - H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)} - H10W 70/456: {Materials} - H10W 70/457: {of metallic layers on leadframes} - H10W 70/465: {Bumps or wires} - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 74/01: Manufacture or treatment - H10W 74/127: {characterised by arrangements for sealing or adhesion} - H10W 74/40: characterised by their materials - H10W 90/811: {Multiple chips on leadframes} - H10W 70/442: {of multiple leadframes in a single chip} - H10W 72/01935: {by plating, e.g. electroless plating or electroplating} - H10W 72/075: {of bond wires} - H10W 72/07554: {changes in dispositions} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements} - H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements} - H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires} - H10W 72/552: {comprising metals or metalloids, e.g. silver} - H10W 72/5525: {comprising copper [Cu]} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/923: {Bond pads having multiple stacked layers} - H10W 72/934: {Cross-sectional shape, i.e. in side view} - H10W 72/9415: {relative to the surface, e.g. recessed, protruding} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 72/981: {Auxiliary members, e.g. spacers} - H10W 74/111: {the semiconductor body being completely enclosed} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract To enhance the reliability of a semiconductor device. A semiconductor device is provided that includes a semiconductor element having a first pad, a frame member having a second pad, a connection member that contains at least one of copper and silver and connects the first pad and the second pad, and a sealing portion that is formed of resin composition containing no sulfur and seals the semiconductor element, the frame member, and the connection member, wherein arithmetic mean roughness of an upper surface of the first pad is equal to or greater than 0.02 μm. Arithmetic mean roughness of an upper surface of the second pad may be greater than the arithmetic mean roughness of the first pad. Sulfur content contained in the resin composition may be less than NH4 ion content contained in the resin composition. ## Claims ### Claim 1 A semiconductor device comprising: a semiconductor element having a first pad formed of AlSiCu or AlCu; a frame member having a second pad; a connection member that contains at least one of copper and silver and connects the first pad and the second pad; and a sealing portion that is formed of resin composition containing no sulfur in excess of 100 ppm as measured by extraction from the sealing portion by ion chromatographic analysis under an extraction condition that the temperature is 150° C. and the duration of time is 100 hours, the sealing portion sealing the semiconductor element, the frame member, and the connection member, wherein arithmetic mean roughness of an upper surface of the first pad is equal to or greater than 0.02 μm. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein arithmetic mean roughness of an upper surface of the second pad is greater than the arithmetic mean roughness of the upper surface of the first pad. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein arithmetic mean roughness of a surface of the frame member is less than the arithmetic mean roughness of the first pad. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein arithmetic mean roughness of an upper surface of the second pad is equal to or greater than 0.03 μm. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein arithmetic mean roughness of a surface of the frame member is equal to or greater than 0.01 μm. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the resin composition of the sealing portion contains no halogen. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein NH4 ion content contained in the resin composition of the sealing portion is greater than 0 and equal to or less than 55 ppm in ion chromatographic analysis under an extraction condition that a temperature is 120° C. and duration of time is 100 hours. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein sulfur content contained in the resin composition of the sealing portion is less than NH4 ion content contained in the resin composition. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor element has a protection portion formed of polyimide around the first pad. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the connection member contains copper, and hardness of the first pad is lower than hardness of the connection member and is higher than one third of hardness of the connection member. ### Claim 11 (depends on 10) The semiconductor device according to claim 10, wherein the first pad contains copper. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor element has a barrier metal provided below the first pad. ### Claim 13 (depends on 1) The semiconductor device according to claim 1, wherein the frame member is formed of copper. ### Claim 14 (depends on 1) The semiconductor device according to claim 1, wherein a maximum cross-sectional height of a roughness profile of the upper surface of the first pad is equal to or greater than 0.2 μm. ### Claim 15 (depends on 1) The semiconductor device according to claim 1, wherein the arithmetic mean roughness of the upper surface of the first pad is equal to or less than 0.1 μm. ### Claim 16 (depends on 1) The semiconductor device according to claim 1, wherein the resin composition contains no sulfur in excess of 70 ppm as measured by extraction from the sealing portion by the ion chromatographic analysis under the extraction condition that the temperature is 150° C. and the duration of time is 100 hours. ### Claim 17 A semiconductor device comprising: a semiconductor element having a first pad formed of AlSiCu or AlCu; a frame member having a second pad; a connection member that contains at least one of copper and silver and connects the first pad and the second pad; and a sealing portion that is formed of resin composition containing no sulfur in excess of 100 ppm as measured by extraction from the sealing portion by ion chromatographic analysis under an extraction condition that the temperature is 150° C. and the duration of time is 100 hours, the sealing portion sealing the semiconductor element, the frame member, and the connection member, wherein arithmetic mean roughness of an upper surface of the second pad is greater than arithmetic mean roughness of the first pad. ### Claim 18 (depends on 17) The semiconductor device according to claim 17, wherein the resin composition contains no sulfur in excess of 50 ppm as measured by extraction from the sealing portion by the ion chromatographic analysis under the extraction condition that the temperature is 150° C. and the duration of time is 100 hours. ### Claim 19 A semiconductor device comprising: a semiconductor element having a first pad formed of AlSiCu or AlCu; a frame member having a second pad; a connection member that contains at least one of copper and silver and connects the first pad and the second pad; and a sealing portion formed of resin composition containing NH4 ion content that is greater than 0 and equal to or less than 55 ppm in ion chromatographic analysis under a first extraction condition that a temperature is 120° C. and duration of time is 100 hours, the resin composition containing no sulfur in excess of 100 ppm as measured by extraction from the sealing portion by ion chromatographic analysis under a second extraction condition that the temperature is 150° C. and the duration of time is 100 hours, the sealing portion sealing the semiconductor element, the frame member, and the connection member. ### Claim 20 (depends on 19) The semiconductor device according to claim 19, wherein the resin composition contains no sulfur in excess of 50 ppm as measured by extraction from the sealing portion by the ion chromatographic analysis under the extraction condition that the temperature is 150° C. and the duration of time is 100 hours.