# US 10,483,173 B2 · Semiconductor device inspection method and semiconductor device manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,173 B2 - Document ID: US10483173B2 - Status: Granted - Kind: B2 - Application number: 16/030,924 - Filed: 2018-07-10 - Published: 2019-09-26 - Granted: 2019-11-19 - Earliest claimed: 2018-03-23 - Assignees: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation - Applicants: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation - Inventors: Ikuo Motonaga - Web page: https://patentgrep.com/patent/US10483173B2 ## CPC - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10W 70/466: {Tape carriers or flat leads} - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 74/01: Manufacture or treatment - H10W 70/461: {specially adapted for cooling} - H10W 72/926: {Multiple bond pads having different sizes} - H10W 74/114: {by a substrate and the encapsulations} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/766: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device inspection method according to an embodiment includes irradiating a semiconductor chip or a metal member with first inspection light having a plurality of linear beams parallel to each other from a first direction inclining with respect to a top surface of a substrate, the semiconductor chip being disposed on the substrate, and the metal member being disposed on the semiconductor chip; obtaining a first image of the semiconductor chip irradiated with the first inspection light or the metal member irradiated with the first inspection light; and calculating first three-dimensional information of the semiconductor chip or the metal member based on the first image by using an optical cutting method. ## Claims ### Claim 1 A semiconductor device inspection method comprising: irradiating a semiconductor chip or a metal member with first inspection light having a plurality of linear beams parallel to each other from a first direction inclining with respect to a top surface of a substrate, the semiconductor chip being disposed on the substrate, and the metal member being disposed on the semiconductor chip; obtaining a first image of the semiconductor chip irradiated with the first inspection light or the metal member irradiated with the first inspection light; and calculating first three-dimensional information of the semiconductor chip or the metal member based on the first image by using an optical cutting method. ### Claim 2 (depends on 1) The semiconductor device inspection method according to claim 1, wherein the calculating first three-dimensional information includes calculating a height based on the top surface of the substrate and calculating an inclination based on the top surface of the substrate. ### Claim 3 (depends on 1) The semiconductor device inspection method according to claim 1, further comprising: irradiating the semiconductor chip or the metal member with second inspection light having a plurality of linear beams parallel to each other from a second direction inclining with respect to the top surface of the substrate, and the second direction being different from the first direction; obtaining a second image of the semiconductor chip irradiated with the second inspection light or the metal member irradiated with the second inspection light; and calculating second three-dimensional information of the semiconductor chip or the metal member based on the second image by using the optical cutting method. ### Claim 4 (depends on 1) The semiconductor device inspection method according to claim 1, further comprising: irradiating the semiconductor chip or the metal member with third inspection light having a plurality of linear beams parallel to each other after calculating the first three-dimensional information, the plurality of linear beams of the third inspection light having a shorter pitch than a pitch of the plurality of linear beams of the first inspection light; obtaining a third image of the semiconductor chip irradiated with the third inspection light or the metal member irradiated with the third inspection light; and calculating third three-dimensional information of the semiconductor chip or the metal member based on the third image by using the optical cutting method. ### Claim 5 (depends on 1) The semiconductor device inspection method according to claim 1, wherein the first image is obtained by a charge coupled device (CCD) camera. ### Claim 6 (depends on 5) The semiconductor device inspection method according to claim 5, wherein the first image is obtained by the CCD camera provided in a normal direction of the substrate. ### Claim 7 (depends on 1) The semiconductor device inspection method according to claim 1, wherein the first inspection light are radiated by a light emitting diode (LED) projector. ### Claim 8 A semiconductor device manufacturing method comprising: disposing a semiconductor chip on a lead frame; disposing a metal member on the semiconductor chip; irradiating the semiconductor chip or the metal member with first inspection light having a plurality of linear beams parallel to each other from a first direction inclining with respect to a top surface of the lead frame at least before disposing the metal member or after disposing the metal member, obtaining a first image of the semiconductor chip irradiated with the first inspection light or the metal member irradiated with the first inspection light, and calculating first three-dimensional information of the semiconductor chip or the metal member based on the first image by using an optical cutting method; and sealing the semiconductor chip and the metal member with a resin after calculating the first three-dimensional information. ### Claim 9 (depends on 8) The semiconductor device manufacturing method according to claim 8, wherein, when the semiconductor chip and the metal member are sealed with the resin, a top surface of the metal member is exposed from a top surface of the resin. ### Claim 10 (depends on 8) The semiconductor device manufacturing method according to claim 8, wherein the calculation of the first three-dimensional information includes calculating a height based on the top surface of the lead frame and calculating an inclination based on the top surface of the lead frame.