# US 10,483,170 B2 · Method of semiconductor integrated circuit fabrication

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- Number: US 10,483,170 B2
- Document ID: US10483170B2
- Status: Granted
- Kind: B2
- Application number: 16/016,862
- Filed: 2018-06-25
- Published: 2018-10-25
- Granted: 2019-11-19
- Earliest claimed: 2016-09-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: De-Wei Yu; Chia Ping Lo; Liang-Gi Yao; Weng Chang; Yee-Chia Yeo; Ziwei Fang
- Web page: https://patentgrep.com/patent/US10483170B2

## CPC

- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/0172: {Manufacturing their gate conductors}
- H10D 84/0188: {Manufacturing their isolation regions}
- H10D 84/0193: {the components including FinFETs}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3454: {Amorphous}
- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10P 95/906: {for altering the shape of semiconductors, e.g. smoothing the surface}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes providing a substrate including a first fin element and a second fin element extending from the substrate. A first layer including an amorphous material is formed over the first and second fin elements, where the first layer includes a gap disposed between the first and second fin elements. An anneal process is performed to remove the gap in the first layer. The amorphous material of the first layer remains amorphous during the performing of the anneal process.

## Claims

### Claim 1

A method comprising:
providing a substrate including a first fin element and a second fin element extending from the substrate;
forming a first layer including an amorphous material over the first and second fin elements, wherein the first layer includes a gap disposed between the first and second fin elements; and
performing an anneal process to remove the gap in the first layer,
wherein the amorphous material of the first layer remains amorphous during the performing of the anneal process.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
forming an isolation feature between the first fin element and the second fin element;
wherein the first layer is disposed over the isolation feature.

### Claim 3 (depends on 1)

The method of claim 1, wherein the amorphous material is amorphous silicon.

### Claim 4 (depends on 1)

The method of claim 1, wherein performing the anneal process to remove the gap in the first layer includes:
inducing bond reconstruction in a portion of the first layer around the gap to remove the gap.

### Claim 5 (depends on 1)

The method of claim 1, wherein performing the anneal process to remove the gap in the first layer includes:
reflowing the first layer around the gap; and
filling the gap by the reflowed first layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the performing the anneal process includes:
adjusting energy applied to the first layer based on a crystallization temperature of the amorphous material.

### Claim 7 (depends on 6)

The method of claim 6, wherein the anneal process is a laser anneal process, and
wherein the adjusting the energy applied to the first layer includes adjusting a pulse duration of a laser beam used in the laser anneal process.

### Claim 8

A method comprising:
forming an isolation feature between a first fin and a second fin disposed over a substrate;
forming a first electrode layer over the first and second fins and the isolation feature, wherein the first electrode layer includes an amorphous material and an air pocket, and wherein the air pocket is disposed over the isolation feature; and
performing a treatment process to the first electrode layer to remove the air pocket,
wherein the amorphous material of the first electrode layer remains amorphous during the performing of the treatment process.

### Claim 9 (depends on 8)

The method of claim 8, wherein the first electrode layer includes a dummy gate electrode layer, further comprising:
forming an inter-level dielectric (ILD) layer over the substrate;
removing the dummy gate electrode layer thereby forming a trench in the ILD layer; and
forming a gate structure in the trench.

### Claim 10 (depends on 8)

The method of claim 8, wherein the amorphous material is amorphous silicon.

### Claim 11 (depends on 8)

The method of claim 8, wherein the treatment process includes a laser anneal process.

### Claim 12 (depends on 8)

The method of claim 8, wherein the performing of the thermal treatment process includes:
performing a rapid thermal annealing process having an annealing duration less than about 240 seconds.

### Claim 13 (depends on 12)

The method of claim 12, wherein the rapid thermal annealing process has an annealing temperature below about 750° C.

### Claim 14

A method comprising:
providing a substrate including a plurality of fin elements extending from the substrate;
forming a first layer over the substrate, wherein the first layer includes a first set of gaps disposed between adjacent fin elements; and
performing a first anneal process to the first layer to remove the first set of gaps,
wherein the amorphous material of the first layer remains amorphous during the performing of the first anneal process, and
wherein the performing the first anneal process includes:
applying a first energy to a first portion of the first layer; and
applying a second energy to a second portion of the first layer, wherein the second energy is different from the first energy.

### Claim 15 (depends on 14)

The method of claim 14, wherein the first anneal process is a laser anneal process using a laser beam.

### Claim 16 (depends on 15)

The method of claim 15, wherein the performing the first anneal process includes:
applying the laser beam having the first energy to the first portion of the first layer;
adjusting the laser beam to the second energy by adjusting a pulse duration of the laser beam; and
applying the laser beam having the second energy to the second portion of the first layer.

### Claim 17 (depends on 14)

The method of claim 14, further comprising:
forming a source/drain feature over one of the plurality of fin elements after performing the first anneal process to remove the first set of gaps.

### Claim 18 (depends on 14)

The method of claim 14, further includes:
forming isolation features between adjacent fin elements, wherein the forming the isolation features between adjacent fin elements includes:
depositing a second layer over the plurality of fin elements, wherein the second dielectric layer includes a second set of gaps;
performing a second anneal process to remove the second set of gaps; and
etching the second layer to expose top portions of the adjacent fin elements and form the isolation features.

### Claim 19 (depends on 14)

The method of claim 14, further comprising:
forming an inter-level dielectric (ILD) layer over the substrate, wherein the ILD layer includes a third set of gaps; and
performing a third anneal process to remove the third set of gaps.

### Claim 20 (depends on 14)

The method of claim 14, wherein the first layer includes a dummy gate electrode layer,
wherein the first portion of the first layer is disposed over isolation features between the adjacent fin elements, and
wherein the second portion of the first layer is disposed over the adjacent fin elements.