# US 10,483,167 B2 · Method for manufacturing dual FinFET device

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- Number: US 10,483,167 B2
- Document ID: US10483167B2
- Status: Granted
- Kind: B2
- Application number: 15/678,097
- Filed: 2017-08-15
- Published: 2019-02-21
- Granted: 2019-11-19
- Earliest claimed: 2017-08-15
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Wei-Barn Chen; Ting-Huang Kuo; Shiu-Ko Jangjian; Chi-Cherng Jeng; Kuang-Yao Lo
- Web page: https://patentgrep.com/patent/US10483167B2

## CPC

- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/8312: {the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions}
- H10D 84/8316: {the IGFETs characterised by having gate sidewall spacers specially adapted for integration}
- H10D 84/834: {comprising FinFETs}
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/21: {of electrically active species}
- H10P 50/694: {characterised by their behaviour during the process, e.g. soluble masks or redeposited masks}
- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10D 84/013: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0147: {Manufacturing their gate sidewall spacers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In a method for manufacturing a semiconductor device, a substrate is provided. A hard mask and a mask layer are formed on a first region and a second region of the substrate. The substrate is recessed using the hard mask and the mask layer to form a fin structure in the first region and a raised structure in the second region. First isolation structures and second isolation structures are formed on lower portions of opposite sidewalls of the fin structure and opposite sidewalls of the raised structure. A first gate structure is formed on a portion of the fin structure, and a second gate structure is formed on a portion of the raised structure. A first source and a first drain are formed on opposite sides of the first gate structure, and a second source and a second drain are formed on opposite sides of the second gate structure.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, the method comprising:
providing a substrate which comprises a first region and a second region;
forming at least one hard mask that is a frame structure on the first region of the substrate;
forming a mask layer on the second region of the substrate;
recessing the substrate by using the at least one hard mask and the mask layer to form a first raised structure in the first region and a second raised structure in the second region;
forming two first isolation structures and two second isolation structures respectively covering two opposite sidewalls of the second raised structure, wherein forming the two first isolation structures comprises removing portions of the first raised structure to form a fin structure, wherein lower portions of two opposite sidewalls of the fin structure are respectively covered by the two first isolation structures;
forming a first gate structure extending on a first portion of the fin structure and portions of the two first isolation structures, and a second gate structure extending on a first portion of the second raised structure and portions of the two second isolation structures, wherein the first gate structure covers upper portions of the two opposite sidewalls and a top surface of the first portion of the fin structure; and
forming a first source and a first drain respectively on two opposite sides of the first gate structure on the fin structure, and a second source and a second drain respectively on two opposite sides of the second gate structure on the second raised structure.

### Claim 2 (depends on 1)

The method of claim 1, wherein a top surface of the second raised structure is substantially aligned with top surfaces of the two second isolation structures.

### Claim 3 (depends on 1)

The method of claim 1, wherein after providing the substrate, the method further comprises:
forming a pad oxide layer on a surface of the substrate;
forming a hard mask layer on the pad oxide layer; and
forming an oxide layer on the hard mask layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein forming the first gate structure comprises:
forming a first dummy gate extending on the first portion of the fin structure and the portions of the two first isolation structures;
forming two first spacers on two opposite sidewalls of the first dummy gate, the fin structure, and the two first isolation structures;
removing the first dummy gate to form a first accommodating space and to expose the upper portions of the two opposite sidewalls and the top surface of the first portion of the fin structure; and
filling the first accommodating space with a first gate.

### Claim 5 (depends on 4)

The method of claim 4, wherein forming the first source and the first drain comprises:
removing uncovered portions of the fin structure and portions of the fin structure covered by the two first spacers to form two holes respectively in the two first spacers; and
forming the first source and the first drain respectively on sidewalls of the two first spacers and filling the two holes.

### Claim 6 (depends on 4)

The method of claim 4, wherein forming the second gate structure comprises:
forming a second dummy gate extending on the first portion of the second raised structure and the portions of the two second isolation structures;
forming two second spacers on two opposite sidewalls of the second dummy gate, the second raised structure, and the two second isolation structures;
removing the second dummy gate to form a second accommodating space and to expose a top surface of the first portion of the second raised structure; and
filling the second accommodating space with a second gate.

### Claim 7 (depends on 6)

The method of claim 6, wherein forming the second source and the second drain comprises:
performing an implantation process on uncovered portions of the second raised structure to form two implantation regions in the second raised structure; and
forming the second source and the second drain respectively in the two implantation regions.

### Claim 8

A method for manufacturing a semiconductor device, the method comprising:
providing a substrate comprising a first region and a second region;
forming a hard mask on the first region of the substrate;
forming a mask layer on the second region of the substrate;
recessing the substrate by using the hard mask and the mask layer to form a first raised structure in the first region and a second raised structure in the second region;
forming a plurality of first isolation structures and two second isolation structures, wherein forming the plurality of first isolation structures comprises removing portions of the first raised structure to form at least two fin structures which extend along a direction, wherein lower portions of two opposite sidewalls of each of the at least two fin structures are covered by two of the plurality of first isolation structures, and two opposite sidewalls of the second raised structure are completely covered by the two second isolation structures;
forming a first gate structure extending on first portions of the at least two fin structures and portions of the plurality of first isolation structures, and a second gate structure extending on a first portion of the second raised structure and portions of the two second isolation structures, wherein the first gate structure covers upper portions of the two opposite sidewalls and top surfaces of the first portions of the at least two fin structures; and
forming a first source and a first drain respectively on two opposite sides of the first gate structure on the at least two fin structures, and a second source and a second drain respectively on two opposite sides of the second gate structure in the second raised structure.

### Claim 9 (depends on 8)

The method of claim 8, wherein a top surface of the second raised structure is substantially aligned with top surfaces of the two second isolation structures.

### Claim 10 (depends on 8)

The method of claim 8, wherein after providing the substrate, the method further comprises forming a hard mask structure on a surface of the substrate.

### Claim 11 (depends on 10)

The method of claim 10, wherein between forming the hard mask structure and forming the hard mask, the method further comprises forming at least one fin mandrel on the hard mask structure on the first region of the substrate, wherein the hard mask is formed to peripherally enclose the at least one fin mandrel.

### Claim 12 (depends on 11)

The method of claim 11, wherein forming the at least one fin mandrel comprises:
forming a fin mandrel layer on the hard mask structure;
forming an anti-reflective film on the fin mandrel layer;
forming a protective layer on the anti-reflective film;
forming an etching mask on a portion of the protective layer; and
performing an etching operation on the protective layer, the anti-reflective film, and the fin mandrel layer by using the etching mask.

### Claim 13 (depends on 12)

The method of claim 12, wherein the fin mandrel layer has an etch selectivity related to the hard mask.

### Claim 14 (depends on 8)

The method of claim 8, wherein forming the first gate structure comprises:
forming a first dummy gate extending on the first portions of the at least two fin structures and the portions of the plurality of first isolation structures;
forming two first spacers on two opposite sidewalls of the first dummy gate, the at least two fin structures, and the plurality of first isolation structures;
removing the first dummy gate to form a first accommodating space and to expose the upper portions of the two opposite sidewalls and the top surfaces of the first portions of the at least two fin structures; and
filling the first accommodating space with a first gate.

### Claim 15 (depends on 14)

The method of claim 14, wherein forming the first source and the first drain comprises:
removing uncovered portions of the at least two fin structures and portions of the at least two fin structures covered by the two first spacers to form holes respectively in the two first spacers; and
forming the first source and the first drain respectively on sidewalls of the two first spacers and filling the holes.

### Claim 16 (depends on 14)

The method of claim 14, wherein forming the second gate structure comprises:
forming a second dummy gate extending on the first portion of the second raised structure and the portions of the two second isolation structures;
forming two second spacers on two opposite sidewalls of the second dummy gate, the second raised structure, and the two second isolation structures;
removing the second dummy gate to form a second accommodating space and to expose a top surface of the first portion of the second raised structure; and
filling the second accommodating space with a second gate.

### Claim 17 (depends on 16)

The method of claim 16, wherein forming the second source and the second drain comprises:
removing uncovered portions of the second raised structure to form two recesses in the second raised structure; and
forming the second source and the second drain respectively in the two recesses.

### Claim 18

A method for manufacturing a semiconductor device, the method comprising:
providing a substrate comprising a first region and a second region;
recessing the substrate by using a hard mask and a mask layer to form a first raised structure in the first region and a second raised structure in the second region, wherein the hard mask is formed on the first region on a sidewall of at least one fin mandrel, and the mask layer is formed on the second region;
forming two first isolation structures and two second isolation structures respectively covering two opposite sidewalls of the second raised structure, wherein forming the two first isolation structures comprises removing portions of the first raised structure to form a fin structure, wherein lower portions of two opposite sidewalls of the fin structure are respectively covered by the two first isolation structures;
forming a first gate structure extending on a first portion of the fin structure and portions of the two first isolation structures, and a second gate structure extending on a first portion of the second raised structure and portions of the two second isolation structures, wherein the first gate structure covers upper portions of the two opposite sidewalls and a top surface of the first portion of the fin structure; and
forming a first source and a first drain respectively on two opposite sides of the first gate structure on the fin structure, and a second source and a second drain respectively on two opposite sides of the second gate structure in the second raised structure.

### Claim 19 (depends on 18)

The method of claim 18, wherein a top surface of the second raised structure is substantially aligned with top surfaces of the two second isolation structures.

### Claim 20 (depends on 18)

The method of claim 18, wherein forming the at least one fin mandrel comprises:
forming a fin mandrel layer on the substrate;
forming an anti-reflective film on the fin mandrel layer;
forming a protective layer on the anti-reflective film;
forming an etching mask on a portion of the protective layer; and
performing an etching operation on the protective layer, the anti-reflective film, and the fin mandrel layer by using the etching mask.