# US 10,483,158 B2 · Contact hole structure and method of fabricating the same

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- Number: US 10,483,158 B2
- Document ID: US10483158B2
- Status: Granted
- Kind: B2
- Application number: 16/226,498
- Filed: 2018-12-19
- Published: 2019-04-25
- Granted: 2019-11-19
- Earliest claimed: 2017-10-05
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Po-Wen Su; Hsuan-Tai Hsu; Kuan-Hsuan Ku
- Web page: https://patentgrep.com/patent/US10483158B2

## CPC

- H10W 20/083: {the openings being via holes penetrating underlying conductors}
- H10D 62/021: {Forming source or drain recesses by etching e.g. recessing by etching and then refilling}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10P 50/283: {by chemical means}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/049: {by diffusing alloying elements}
- H10W 20/084: {for dual-damascene structures}
- H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W 20/42: Vias, e.g. via plugs
- H10D 30/0212: {using self-aligned silicidation}
- H10D 30/797: {being in source or drain regions, e.g. SiGe source or drain}
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 64/0112: {using conductive layers comprising silicides}
- H10W 20/0765: {the thin functional dielectric layers being temporary, e.g. sacrificial layers}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of fabricating a contact hole structure includes providing a substrate with an epitaxial layer embedded therein. Next, an interlayer dielectric is formed to cover the substrate. After that, a first hole is formed in the interlayer dielectric and the epitaxial layer. Later, a mask layer is formed to cover a sidewall of the first hole and expose a bottom of the first hole. Subsequently, a second hole is formed by etching the epitaxial layer at the bottom of the first hole and taking the mask layer and the interlayer dielectric as a mask, wherein the first hole and the second hole form a contact hole. Then, the mask layer is removed. Finally, a silicide layer is formed to cover the contact hole.

## Claims

### Claim 1

A contact hole structure, comprising:
a substrate having a top surface;
an epitaxial layer embedded within the substrate;
a contact hole disposed in the epitaxial layer, wherein the contact hole in the epitaxial layer has an inner surface comprising a convex curved portion and a concave curved portion, the convex curved portion is in a shape of a first circular arc and the concave curved portion is in a shape of a second circular arc, and wherein the contact hole has an intersection coplanar with the top surface, and a first width of the intersection is larger than a third width of any part of the contact hole below the intersection, and the first width and the third width are parallel; and
a silicide layer filling in the contact hole, wherein the convex curved portion and the concave curved portion directly contact the silicide layer.

### Claim 2 (depends on 1)

The contact hole structure of claim 1, further comprising:
an interlayer dielectric covering the substrate and the epitaxial layer, wherein the contact hole extends into the interlayer dielectric; and
a gate structure disposed on the substrate at a side of the epitaxial layer.

### Claim 3 (depends on 1)

The contact hole structure of claim 1, further comprising:
a conductive layer filling in the contact hole.

### Claim 4 (depends on 1)

The contact hole structure of claim 1, wherein the contact hole further comprises a tip, the first width is greater than a second width of the tip, and a ratio of the first width to the second width is between 1.4 and 3.3.

### Claim 5 (depends on 1)

The contact hole structure of claim 1, wherein the inner surface has a positive curvature and a negative curvature.

### Claim 6 (depends on 1)

The contact hole structure of claim 1, wherein the silicide layer directly contacts an entirety of the inner surface of the contact hole in the epitaxial layer.

### Claim 7

A contact hole structure, comprising:
a substrate having a top surface;
an epitaxial layer embedded within the substrate;
a contact hole disposed in the epitaxial layer, wherein the contact hole in the epitaxial layer has an inner surface comprising a convex curved portion and a concave curved portion, the convex curved portion is in a shape of a first circular arc and the concave curved portion is in a shape of a second circular arc, and wherein the contact hole has an intersection, and the intersection has an opening which is coplanar with the top surface of the substrate, and a first width of the intersection of the contact hole is larger than a third width of any part of the contact hole below the intersection thereof, and the first width and the third width are parallel to the top surface of the substrate, wherein the contact hole further has a portion thereof shaped as a nipple tip and a nipple bottom, the nipple tip is disposed below the nipple bottom within the contact hole, a width of the nipple bottom is greater than a width of the nipple tip; and
a silicide layer filling in the contact hole, wherein the convex curved portion and the concave curved portion directly contact the silicide layer.

### Claim 8 (depends on 7)

The contact hole structure of claim 7, wherein the concave curved portion in the shape of the second circular arc is disposed in the nipple bottom and the convex curved portion in the shape of the first circular arc is disposed at a transition of the nipple bottom and the nipple tip of the contact hole.

### Claim 9 (depends on 7)

The contact hole structure of claim 7, wherein the nipple bottom has a first length, the nipple tip has a second length, and a ratio of the first length to the second length is between 0.17 and 0.4.

### Claim 10 (depends on 7)

The contact hole structure of claim 7, wherein a ratio of the width of the nipple bottom to the width of the nipple tip is between 1.4 and 3.3.