# US 10,483,126 B2 · Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

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- Number: US 10,483,126 B2
- Document ID: US10483126B2
- Status: Granted
- Kind: B2
- Application number: 15/697,615
- Filed: 2017-09-07
- Published: 2018-08-09
- Granted: 2019-11-19
- Earliest claimed: 2017-02-03
- Assignees: Toshiba Memory Corporation
- Applicants: Toshiba Memory Corporation
- Inventors: Takashi Izumi; Fumitoshi Ikegaya
- Web page: https://patentgrep.com/patent/US10483126B2

## CPC

- H10P 50/667: {by liquid etching only}
- C25D 5/48: After-treatment of electroplated surfaces
- H10P 72/0404: {for general liquid treatment, e.g. etching followed by cleaning}
- H10P 72/0414: {using mainly spraying means, e.g. nozzles}
- C25D 17/001: {Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells}
- H10P 70/54: {Cleaning of wafer edges}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR

## Abstract

A semiconductor manufacturing apparatus according to the present embodiment has a mount unit capable of mounting a substrate. A first supplier supplies a chemical solution onto the substrate. A first protection plate is provided along an outer circumference of the substrate, to receive the chemical solution splashing from the substrate. A second supplier is provided above the first protection plate, to supply a cleaning solution to an inner surface of the first protection plate.

## Claims

### Claim 1

A semiconductor manufacturing apparatus comprising:
a stage capable of mounting a substrate;
a first nozzle supplying a chemical solution onto the substrate;
a first protection plate provided along an outer circumference of the substrate, the first protection plate receiving the chemical solution splashing from the substrate;
a second nozzle provided above the first protection plate, the second nozzle supplying pure water to an inner surface of the first protection plate;
a second protection plate provided at an outside of the first protection plate, the second protection plate receiving the chemical solution splashing from the substrate;
a third nozzle provided above the second protection plate, the third nozzle supplying pure water to an inner surface of the second protection plate; and
a sucker sucking the chemical solution supplied onto the substrate, wherein
an angle of inclination of the inner surface of the first protection plate is zero to 45 degrees with respect to an almost vertical direction,
the inner surface of the first protection plate is hydrophilic so that a contact angle between the inner surface of the first protection plate and pure water is less than 90 degrees,
the second nozzle is a pipe provided along an upper edge part of the first protection plate, the pipe comprising a plurality of first holes,
the first holes are provided to the second nozzle at an inner surface side of the first protection plate,
the third nozzle is a pipe provided along an upper edge part of the second protection plate, the pipe comprising a plurality of second holes,
the second holes are provided to the third nozzle at an inner surface side of the second protection plate, and
the stage rotates the substrate while the chemical solution or the pure water is supplied on the substrate.