# US 10,483,110 B2 · Semiconductor device and method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,110 B2 - Document ID: US10483110B2 - Status: Granted - Kind: B2 - Application number: 16/307,558 - Filed: 2017-06-08 - Published: 2019-08-29 - Granted: 2019-11-19 - Earliest claimed: 2016-07-26 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Yohei Yuda; Tatsuro Watahiki - Web page: https://patentgrep.com/patent/US10483110B2 ## CPC - H10D 64/0123: {to silicon carbide} - H10D 8/60: Schottky-barrier diodes - H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs} - H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs} - H10D 62/10: Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 62/80: characterised by the materials - H10D 62/8325: {Silicon carbide} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 64/111: {Field plates} - H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A p-type oxide semiconductor is prevented from being oxidized by oxygen in an n-type oxide semiconductor even if the p-type oxide semiconductor is provided as a termination structure in the n-type oxide semiconductor. A semiconductor device includes an n-type gallium oxide substrate, an anode electrode joined to the n-type gallium oxide substrate, and a cathode electrode provided on the n-type gallium oxide substrate. Current flows between the anode electrode and the cathode electrode via the n-type gallium oxide substrate provided between the anode electrode and the cathode electrode. The semiconductor device further includes a p-type oxide semiconductor layer provided adjacent to a junction between the anode electrode and the n-type gallium oxide substrate, and a nitride layer provided between the p-type oxide semiconductor layer and the n-type gallium oxide substrate. ## Claims ### Claim 1 A semiconductor device comprising: an n-type oxide semiconductor layer; a first electrode joined to a first main surface of the n-type oxide semiconductor layer; and a second electrode provided on the first main surface of the n-type oxide semiconductor layer or on a second main surface that is a surface on a rear side of the first main surface, wherein current flows between the first electrode and the second electrode via the n-type oxide semiconductor layer provided between the first electrode and the second electrode, the semiconductor device further comprising: a p-type oxide semiconductor layer provided adjacent to a junction between the first electrode and the n-type oxide semiconductor layer; and a nitride layer provided between the p-type oxide semiconductor layer and the n-type oxide semiconductor layer. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the nitride layer is provided on a surface of the n-type oxide semiconductor layer, and the p-type oxide semiconductor layer is provided on the nitride layer. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein a layer thickness of the nitride layer is greater than or equal to 0.3 nm and less than or equal to 5 nm. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein a material for the n-type oxide semiconductor layer is gallium oxide. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein the n-type oxide semiconductor layer is configured by an n-type gallium oxide substrate. ### Claim 6 (depends on 4) The semiconductor device according to claim 4, wherein the n-type oxide semiconductor layer is configured by an n-type gallium oxide substrate and an n-type gallium oxide epitaxial layer provided on the n-type gallium oxide substrate, and the first electrode is joined to the n-type gallium oxide epitaxial layer. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the first electrode and the n-type oxide semiconductor layer are Schottky-joined. ### Claim 8 (depends on 7) The semiconductor device according to claim 7, wherein the first electrode further is ohmic-joined with the p-type oxide semiconductor layer. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein a plurality of Schottky junction portions that the first electrode and the n-type oxide semiconductor layer are Schottky joined are formed, and the nitride layer and the p-type oxide semiconductor layer are provided between the plurality of Schottky junction portions. ### Claim 10 (depends on 8) The semiconductor device according to claim 8, further comprising: a field plate insulation layer provided on part of the p-type oxide semiconductor layer, wherein the first electrode is provided to cover the p-type oxide semiconductor layer and the field plate insulation layer. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, wherein the first electrode is provided on the first main surface, and the second electrode is provided on the second main surface. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, wherein a material for the nitride layer is GaN. ### Claim 13 (depends on 1) The semiconductor device according to claim 1, wherein a material for the p-type oxide semiconductor layer includes one of Cu2O, Ag2O, NiO, and SnO. ### Claim 14 A semiconductor device manufacturing method comprising the steps of: forming a nitride layer on a surface of an n-type oxide semiconductor layer that contains metal oxide, through nitridation of the metal contained in the metal oxide, the nitride layer having an opening that exposes the n-type oxide semiconductor layer; forming a p-type oxide semiconductor layer on the nitride layer; and forming an electrode that is joined to the n-type oxide semiconductor layer in the opening. ### Claim 15 (depends on 14) The semiconductor device manufacturing method according to claim 14, wherein the metal of the metal oxide is Ga.