# US 10,483,104 B2 · Method for producing stacked electrode and method for producing photoelectric conversion device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,104 B2 - Document ID: US10483104B2 - Status: Granted - Kind: B2 - Application number: 14/874,569 - Filed: 2015-10-05 - Published: 2016-01-28 - Granted: 2019-11-19 - Earliest claimed: 2012-03-30 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Katsuyuki Naito; Eishi Tsutsumi; Norihiro Yoshinaga; Yoshihiro Akasaka - Web page: https://patentgrep.com/patent/US10483104B2 ## CPC - H10P 14/3462: {Nanowires} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - C23C 16/06: characterised by the deposition of metallic material - C23C 16/26: Deposition of carbon only - H10D 64/205: {Nanosized electrodes, e.g. nanowire electrodes} - H10F 10/167: comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells - H10F 71/138: {Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes} - H10F 77/244: {made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers} - H10K 30/82: Transparent electrodes, e.g. indium tin oxide [ITO] electrodes - B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals - B82Y 40/00: Manufacture or treatment of nanostructures - H10K 85/20: Carbon compounds, e.g. carbon nanotubes or fullerenes - Y02E 10/541: CuInSe2 material PV cells - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - Y10S 977/755: Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract A method for producing a stacked electrode of an embodiment includes preparing a multi-layered graphene film, applying a dispersion liquid of metal nanowires onto the multi-layered graphene film, and removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film. ## Claims ### Claim 1 A method for producing a stacked electrode, comprising: preparing a multi-layered graphene film directly on an insulating substrate; applying a dispersion liquid of metal nanowires directly onto the multi-layered graphene film; removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film; pressing the metal wiring to prepare a metal wiring on the multi-layered graphene filing and to strengthen the connection between the multi-layered graphene film and the metal nanowires; forming a polymer directly on the multi-layered graphene film and the metal wiring to fill asperities of the metal nanowires, wherein the polymer covers the multi-layered graphene film and the metal wiring to obtain a stacked member including the insulating substrate, the multi-layered graphene film, the metal wire, and the polymer; and cleaving a side of the stacked member where the multi-layered graphene and the insulating substrate are in direct contact and obtaining the stacked electrode including the multi-layered graphene film, the metal wire, and the polymer. ### Claim 2 (depends on 1) The method according to claim 1, wherein the metal nanowires contain silver, gold, or copper. ### Claim 3 (depends on 1) The method according to claim 1, wherein a thickness of the multi-layered graphene film is between 0.6 nm and 0.5 nm. ### Claim 4 (depends on 1) The method according to claim 1, wherein the preparing of the multi-layered graphene film includes partially substituting carbon atoms of the multi-layered graphene film with nitrogen or boron. ### Claim 5 (depends on 1) The method according to claim 1, wherein the preparing of the multi-layered graphene film includes applying a graphene oxide and reducing the graphene oxide to prepare the multi-layered graphene film on the insulating substrate. ### Claim 6 (depends on 1) The method according to claim 1, wherein the preparing of the multi-layered graphene film includes transferring a graphene formed by a CVD process to prepare the multi-layered graphene film. ### Claim 7 (depends on 1) The method according to claim 1, wherein the polymer is a conductive polymer. ### Claim 8 (depends on 1) The method according to claim 1, wherein the polymer contains a graphene oxide. ### Claim 9 (depends on 1) The method according to claim 1, wherein the polymer is a near-infrared transmission polymer. ### Claim 10 (depends on 1) The method according to claim 1, wherein the insulating substrate is a polymer substrate, a resin substrate or glass. ### Claim 11 (depends on 1) The method according to claim 1, wherein the insulating substrate is a polymer substrate or a resin substrate. ### Claim 12 (depends on 1) The method according to claim 1, wherein the metal wiring formed from the dispersion liquid of the metal nanowires is a plurality of patterned strips, and each of the patterned strips includes the metal nanowires. ### Claim 13 (depends on 1) The method according to claim 1, wherein the metal nanowires are randomly oriented, and the randomly oriented metal nanowires have a mesh structure. ### Claim 14 (depends on 1) The method according to claim 1, wherein the stacked electrode consists of the multi-layered graphene film, the metal wire, and the polymer. ### Claim 15 A method for producing a photoelectric conversion device including, as constituents, a stacked electrode, a counter electrode facing the stacked electrode, and a photoelectric conversion layer interposed between the stacked electrode and the counter electrode, wherein a method for producing the stacked electrode is the method for producing a stacked electrode comprising: preparing a multi-layered graphene film directly on an insulating substrate; applying a dispersion liquid of metal nanowires directly onto the multi-layered graphene film; removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film; pressing the metal wiring to prepare a metal wiring on the multi-layered graphene film and to strengthen the connection between the multi-layered graphene film and the metal nanowires; forming a polymer directly on the multi-layered graphene film and the metal wiring to fill asperities of the metal nanowires, wherein the polymer covers the multi-layered graphene film and the metal wiring to obtain a stacked member including the insulating substrate, the multi-layered graphene film, the metal wire, and the polymer, the multi-layered graphene being disposed between the insulating substrate and the metal wiring; and cleaving a side where the multi-layered graphene and the insulating substrate are in direct contact and obtaining the stacked electrode including the multi-layered graphene film, the metal wire, and the polymer. ### Claim 16 (depends on 15) The method according to claim 15, wherein the photoelectric conversion layer is produced by coating. ### Claim 17 (depends on 15) The method according to claim 15, wherein the stacked electrode is pasted to the upper portion of the photoelectric conversion layer by a dry lamination. ### Claim 18 (depends on 15) The method according to claim 15, wherein the photoelectric conversion layer is prepared on the stacked electrode. ### Claim 19 (depends on 15) The method according to claim 15, wherein the counter electrode is an electrode obtained by stacking an ITO and a silver alloy. ### Claim 20 (depends on 15) The method according to claim 15, wherein the counter electrode is a metal foil. ### Claim 21 (depends on 15) The method according to claim 15, wherein the stacked electrode consists of the multi-layered graphene film, the metal wire, and the polymer.