# US 10,483,097 B2 · Method for cleaning, passivation and functionalization of Si—Ge semiconductor surfaces

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,483,097 B2
- Document ID: US10483097B2
- Status: Granted
- Kind: B2
- Application number: 15/696,812
- Filed: 2017-09-06
- Published: 2018-05-17
- Granted: 2019-11-19
- Earliest claimed: 2012-10-24
- Assignees: The Regents of the University of California
- Applicants: The Regents of the University of California
- Inventors: Tobin Kaufman-Osborn; Andrew C. Kummel; Kiarash Kiantaj
- Web page: https://patentgrep.com/patent/US10483097B2

## CPC

- H10P 70/23: {during, before or after processing of insulating materials}
- B08B 7/0035: {by radiant energy, e.g. UV, laser, light beam or the like}
- H10D 62/832: being Group IV materials comprising two or more elements, e.g. SiGe
- H10D 64/01356: {the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC (H10D64/01364, H10D64/01366 take precedence)}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6504: {In-situ cleaning}
- H10P 14/6512: {by exposure to a gas or vapour}
- H10P 50/00: Etching of wafers, substrates or parts of devices
- H10P 70/12: {by dry cleaning only (H10P70/52 takes precedence)}
- H10P 70/18: {by combined dry cleaning and wet cleaning (H10P70/52 takes precedence)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF (aq) or NH4F (g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.

## Claims

### Claim 1

A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
ex-situ, degreasing the Ge containing semiconductor surface;
ex-situ, removing organic contaminants;
dosing the SiGe surface with HF (aq), or with NH4F (g) generated via NH3+NF3 or via NF3 with H2 or H2O;
in-situ dosing the SiGe surface with atomic H to remove carbon contamination;
in-situ passivating with H2O2 (g); and
in-situ nucleating with trimethylaluminum (TMA).

### Claim 2 (depends on 1)

The method of claim 1, further comprising annealing at ˜200-300° C. after said nucleating.

### Claim 3

A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
ex-situ, degreasing the Ge containing semiconductor surface,
ex-situ, removing organic contaminants,
dosing the SiGe surface with HF through in-situ formation via NF3+atomic H; and
in-situ dosing the SiGe surface with atomic H to remove carbon contamination.

### Claim 4 (depends on 3)

The method of claim 3, further comprising in-situ passivating with H2O2 (g).

### Claim 5

A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
ex-situ, degreasing the Ge containing semiconductor surface;
ex-situ, removing organic contaminants;
dosing the SiGe surface with NH4F through in-situ thermally or plamsa mixing NH3+NF3; and
in-situ dosing the SiGe surface with atomic H to remove carbon contamination.

### Claim 6

A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
ex-situ, degreasing the Ge containing semiconductor surface;
ex-situ, removing organic contaminants;
dosing the SiGe surface with NH4F through in-situ plasma mixing of NF3 with H2 or H2O, and
in-situ dosing the SiGe surface with atomic H to remove carbon contamination.