# US 10,483,086 B2 · Beam profiling speed enhancement for scanned beam implanters > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,086 B2 - Document ID: US10483086B2 - Status: Granted - Kind: B2 - Application number: 14/978,120 - Filed: 2015-12-22 - Published: 2016-06-30 - Granted: 2019-11-19 - Earliest claimed: 2014-12-26 - Assignees: Axcelis Technologies, Inc. - Applicants: Axcelis Technologies, Inc. - Inventors: Andy M. Ray; Edward C. Eisner; Bo H. Vanderberg - Web page: https://patentgrep.com/patent/US10483086B2 ## CPC - H01J 37/304: Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals - H01J 37/3171: {for ion implantation} - H01J 2237/24514: Beam diagnostics including control of the parameter or property diagnosed (H01J2237/30472 takes precedence) - H01J 2237/24528: Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece - H01J 2237/24535: Beam current - H01J 2237/24542: Beam profile - H01J 2237/30483: Scanning - H01J 2237/31703: Dosimetry - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam. ## Claims ### Claim 1 An ion implantation system for implanting ions into a workpiece, comprising: an ion source configured to generate an ion beam; a mass analyzer configured to mass analyze the ion beam; a beam scanner configured to scan the ion beam along a scan plane, therein defining a scanned ion beam, wherein the beam scanner is further configured to scan the ion beam at a first frequency and a second frequency, wherein the first frequency is greater than the second frequency; an end station configured to receive the scanned ion beam at a workpiece plane associated with the workpiece when the beam scanner scans the ion beam at the second frequency; a beam profiling apparatus configured to translate through the scanned ion beam along the scan plane when the ion beam is scanned at the first frequency, wherein the beam profiling apparatus is further configured to measure one or more properties of the scanned ion beam concurrent with the translation; and a controller configured determine a profile of the scanned ion beam when the ion beam is scanned at the second frequency based, at least in part, on the one or more properties of the scanned ion beam when the ion beam is scanned at the first frequency, wherein the first frequency is at least twice the second frequency. ### Claim 2 (depends on 1) The ion implantation system of claim 1, wherein the one or more properties of the ion beam comprise one or more of a current of the ion beam and an angle of the ion beam incident to the workpiece plane. ### Claim 3 (depends on 1) The ion implantation system of claim 1, wherein the beam profiling apparatus comprises a Faraday cup configured to pass through the ion beam along the scan plane. ### Claim 4 (depends on 3) The ion implantation system of claim 3, wherein the Faraday cup comprises a narrow slit through which a portion of the ion beam is permitted to enter. ### Claim 5 (depends on 1) The ion implantation system of claim 1, wherein the controller is further configured to tune the ion beam based on the one or more properties of the ion beam that are measured at the first frequency and a desired one or more properties of the ion beam when the ion beam is scanned at the second frequency. ### Claim 6 (depends on 5) The ion implantation system of claim 5, wherein the controller is configured to tune the ion beam via a control of one or more of the ion source, the mass analyzer, and the beam scanner. ### Claim 7 An ion implantation system for implanting ions into a workpiece, comprising: an ion source configured to generate an ion beam; a mass analyzer configured to mass analyze the ion beam; a beam scanner configured to scan the ion beam along a scan plane, therein defining a scanned ion beam, wherein the beam scanner is further configured to scan the ion beam at a first frequency and a second frequency, wherein the first frequency is greater than the second frequency; an end station configured to receive the scanned ion beam at a workpiece plane associated with the workpiece when the beam scanner scans the ion beam at the second frequency; a beam profiling apparatus configured to translate through the scanned ion beam along the scan plane when the ion beam is scanned at the first frequency, wherein the beam profiling apparatus is further configured to measure one or more properties of the scanned ion beam concurrent with the translation; and a controller configured determine a profile of the scanned ion beam when the ion beam is scanned at the second frequency based, at least in part, on the one or more properties of the scanned ion beam when the ion beam is scanned at the first frequency, wherein the first frequency is at least one order of magnitude greater than the second frequency. ### Claim 8 A method for implanting ions, the method comprising: tuning an ion beam to a first process recipe; scanning the ion beam along a scan plane at a first frequency, therein defining a first scanned ion beam; translating a beam profiling apparatus through the first scanned ion beam; measuring one or more properties of the first scanned ion beam across a width of the first scanned ion beam concurrent with the translation of the beam profiling apparatus, therein defining a first beam profile associated with the first scanned ion beam; and scanning the ion beam along the scan plane at a second frequency, therein defining a second scanned ion beam, wherein the first frequency is at least twice the second frequency; determining a second beam profile associated with the second scanned ion beam based, at least in part, on the first beam profile; and implanting ions into a workpiece via the second scanned ion beam. ### Claim 9 (depends on 8) The method of claim 8, further comprising tuning the ion beam to a second process recipe, wherein the second process recipe is based on the second profile. ### Claim 10 (depends on 8) The method of claim 8, wherein the one or more properties of the first scanned ion beam comprise one or more of a current, uniformity, and angle of the ion beam. ### Claim 11 (depends on 8) The method of claim 8, wherein the beam profiling apparatus comprises a Faraday cup. ### Claim 12 (depends on 8) The method of claim 8, wherein determining the second profile is further based on a frequency response of scan generation and amplification systems associated with the scanning of the ion beam. ### Claim 13 A method for implanting ions, the method comprising: tuning an ion beam to a first process recipe; scanning the ion beam along a scan plane at a first frequency, therein defining a first scanned ion beam; translating a beam profiling apparatus through the first scanned ion beam; measuring one or more properties of the first scanned ion beam across a width of the first scanned ion beam concurrent with the translation of the beam profiling apparatus, therein defining a first beam profile associated with the first scanned ion beam; and scanning the ion beam along the scan plane at a second frequency, therein defining a second scanned ion beam, wherein the first frequency is at least one order of magnitude greater than the second frequency; determining a second beam profile associated with the second scanned ion beam based, at least in part, on the first beam profile; and implanting ions into a workpiece via the second scanned ion beam. ### Claim 14 A method of performing dosimetry control in an ion implantation system, comprising: forming an ion beam utilizing a first process recipe; scanning the ion beam at a first frequency along a scan plane to form a first scanned ion beam; measuring one or more properties of the first scanned ion beam by translating a beam profiling apparatus through the ion beam, therein defining a time and position dependent first profile associated with the first scanned ion beam; scanning the ion beam at a second frequency along the scan plane to form a second scanned ion beam, wherein the first frequency is at least one order of magnitude greater than the second frequency; determining a time and position dependent second profile associated with the second scanned ion beam based, at least in part, on the first profile; and implanting ions into a workpiece via the second scanned ion beam. ### Claim 15 (depends on 14) The method of claim 14, wherein measuring the one or more properties of the ion beam comprises measuring the ion beam current and angle of incidence of the ion beam at the scan plane. ### Claim 16 (depends on 14) The method of claim 14, wherein measuring the one or more properties of the ion beam comprises translating a Faraday cup from a first lateral edge to a second lateral edge of the first scanned ion beam and measuring the beam current via the Faraday cup. ### Claim 17 (depends on 14) The method of claim 14, further comprising tuning the ion beam to a second process recipe, wherein the second process recipe is based on the second profile.