# US 10,483,079 B2 · Method for manufacturing radiation window and a radiation window > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,079 B2 - Document ID: US10483079B2 - Status: Granted - Kind: B2 - Application number: 15/361,186 - Filed: 2016-11-25 - Published: 2017-06-01 - Granted: 2019-11-19 - Earliest claimed: 2015-11-26 - Assignees: Hs Foils Oy - Applicants: HS Folis Oy - Inventors: Pekka Torma; Heikki Johannes Sipila - Web page: https://patentgrep.com/patent/US10483079B2 ## CPC - H01J 35/18: Windows - B23K 1/0008: {specially adapted for particular articles or work} - B23K 35/26: with the principal constituent melting at less than 400°C - C23C 14/0635: {Carbides} - C23C 14/28: by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence) - C23C 14/34: Sputtering - C23C 14/5873: {Removal of material} - C23C 16/32: Carbides - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - C23C 16/56: After-treatment - C23C 28/32: {including at least one pure metallic layer} - H01J 5/18: Windows permeable to X-rays, gamma-rays, or particles - H10F 71/1395: {for thin-film devices} - H01J 2235/183: Multi-layer structures - H10F 30/301: {the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract For manufacturing a radiation window for an X-ray measurement apparatus, an etch stop layer is first produced on a polished surface of a carrier. A thin film deposition technique is used to produce a boron carbide layer on an opposite side of the etch stop layer than the carrier. The combined structure including the carrier, the etch stop layer, and the boron carbide layer is attached to a region around an opening in a support structure with the boron carbide layer facing the support structure. The middle area of carrier is etched away, leaving an additional support structure. ## Claims ### Claim 1 A method for manufacturing a radiation window for an X-ray measurement apparatus, comprising: producing an etch stop layer on a polished surface of a carrier, using a thin film deposition technique to produce a first boron carbide layer on an opposite side of said etch stop layer than said carrier, soldering the combined structure comprising said carrier, said etch stop layer, and said first boron carbide layer to a region around an opening in a support structure with said first boron carbide layer facing said support structure, etching away the middle area of said carrier forming an additional support structure, and after etching away the middle area of said carrier, producing a second boron carbide layer as an additional layer on the exposed etch stop layer on an opposite side of the etch stop layer than said first boron carbide layer. ### Claim 2 (depends on 1) The method according to claim 1, wherein said carrier is a silicon wafer. ### Claim 3 (depends on 1) The method according to claim 1, wherein said thin film deposition technique comprises at least one of the following: sputtering, plasma assisted chemical vapour deposition, pulsed laser deposition. ### Claim 4 (depends on 1) The method according to claim 1, wherein said combined structure is soldered to said region with a solder. ### Claim 5 (depends on 4) The method according to claim 4, wherein the solder is implemented with indium. ### Claim 6 (depends on 4) The method according to claim 4, further comprising: producing a gold-plating on the surfaces of the support structure and the first boron carbide layer to which the solder is arranged. ### Claim 7 (depends on 1) The method according to claim 1, further comprising: producing one or more diffusion barrier layers on said etch stop layer, so that said thin film deposition technique is used to produce said first boron carbide layer on top of said one or more diffusion barrier layers. ### Claim 8 A radiation window for an X-ray measurement apparatus, comprising: a support structure that defines an opening, and stretched across said opening a layered window foil that is soldered to the support structure at a region around said opening; wherein said layered window foil comprises a first boron carbide layer manufactured by a thin film deposition technique, an etch stop layer on an opposite side of said first boron carbide layer than said support structure, and an additional support structure on an opposite side of said etch stop layer than said first boron carbide layer, and wherein the radiation window comprises a second boron carbide layer on an opposite side of said etch stop layer than said first boron carbide layer. ### Claim 9 (depends on 8) The radiation window according to claim 8, further comprising a layered diffusion barrier between said first boron carbide layer and said etch stop layer. ### Claim 10 (depends on 8) The radiation window according to claim 8, further comprising an aluminum layer. ### Claim 11 (depends on 8) The radiation window according to claim 8, wherein the first boron carbide layer between the support structure and the etch stop layer is between 1 and 5 micrometers thick. ### Claim 12 (depends on 8) The radiation window according to claim 8, wherein the etch stop layer is made of silicon nitride and is between 20 and 200 nanometers thick. ### Claim 13 (depends on 8) The radiation window according to claim 8, wherein the first boron carbide layer between the support structure and the etch stop layer is between 1 and 3 micrometers thick.