# US 10,482,984 B2 · Ramp down sensing between program voltage and verify voltage in memory device

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- Number: US 10,482,984 B2
- Document ID: US10482984B2
- Status: Granted
- Kind: B2
- Application number: 15/952,752
- Filed: 2018-04-13
- Published: 2019-10-17
- Granted: 2019-11-19
- Earliest claimed: 2018-04-13
- Assignees: SanDisk Technologies LLC
- Applicants: SanDisk Technologies LLC
- Inventors: Xiang Yang; Huai-Yuan Tseng; Deepanshu Dutta
- Web page: https://patentgrep.com/patent/US10482984B2

## CPC

- G11C 16/08: Address circuits; Decoders; Word-line control circuits
- G11C 16/3463: {Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification}
- G11C 11/5628: {Programming or writing circuits; Data input circuits}
- G11C 11/5642: {Sensing or reading circuits; Data output circuits}
- G11C 16/0483: {comprising cells having several storage transistors connected in series}
- G11C 16/10: Programming or data input circuits
- G11C 16/26: Sensing or reading circuits; Data output circuits
- G11C 16/3459: {Circuits or methods to verify correct programming of nonvolatile memory cells}
- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- G11C 16/0408: {comprising cells containing floating gate transistors (G11C16/0483, G11C16/0491 take precedence)}
- G11C 16/0466: {comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] (G11C16/0483, G11C16/0491 take precedence)}
- G11C 2211/5621: Multilevel programming verification
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

Apparatuses and techniques are described for optimizing a program operation in a memory device. A storage location stores programing data for each word line, such as a program voltage for a set of memory cells. The set of memory cells may be periodically evaluated to determine updated programming setting(s). In one approach, the evaluation involves repeatedly sensing the set of memory cells between a program pulse and a verify signal in a program loop. The word line voltage can be stepped down to an intermediate voltage, then ramped down at a controlled rate while repeatedly sensing the memory cells, such as to detect an upper or lower tail of a threshold voltage distribution. The position of the tail can indicate a degree of over programming and this information can be used to adjust the programming setting(s) in a subsequent program operation.

## Claims

### Claim 1

An apparatus, comprising:
a set of memory cells connected to a selected word line;
a voltage driver configured to, in a program operation, apply a program voltage to the selected word line followed by ramping down a voltage of the selected word line; and
sense circuits configured to perform repeated sensing of the set of memory cells during the ramping down of the voltage of the selected word line.

### Claim 2 (depends on 1)

The apparatus of claim 1, further comprising:
a control circuit configured to evaluate a degree of over programming of the set of memory cells based on the repeated sensing of the set of memory cells, and to adjust programming setting(s) of a subsequent program operation based on the degree of over programming.

### Claim 3 (depends on 1)

The apparatus of claim 1, further comprising:
a control circuit configured to detect a tail of a threshold voltage distribution of the set of memory cells based on the repeated sensing of the set of memory cells.

### Claim 4 (depends on 3)

The apparatus of claim 3, wherein:
the sense circuits are configured to stop the repeated sensing of the set of memory cells when the tail of the threshold voltage distribution of the set of memory cells is detected.

### Claim 5 (depends on 1)

The apparatus of claim 1, wherein:
in each of a plurality of program loops of the program operation, the voltage driver configured to apply the program voltage then ramp down the voltage of the selected word line, and the sense circuits configured to perform the repeated sensing of the set of memory cells during the ramping down of the voltage of the selected word line; and
the repeated sensing indicates that the set of memory cells reaches a program milestone in one program loop of the plurality of program loops.

### Claim 6 (depends on 5)

The apparatus of claim 5, further comprising:
a control circuit configured to adjust programming setting(s) of a subsequent program operation based on the one program loop.

### Claim 7 (depends on 1)

The apparatus of claim 1, wherein:
the sense circuits configured to start the repeated sensing of the set of memory cells during the ramping down of the voltage of the selected word line when the voltage of the selected word line is at a voltage which is based on programming setting(s) of the set of memory cells.

### Claim 8 (depends on 1)

The apparatus of claim 1, wherein:
the voltage driver configured to, in the program operation, apply a verify voltage to the selected word line after the ramping down of the voltage of the selected word line the voltage of the selected word line is ramped down to the verify voltage; and
the sense circuits configured to sense the set of memory cells when the verify voltage is applied to the selected word line.

### Claim 9 (depends on 8)

The apparatus of claim 8, further comprising:
a set of memory cells connected to an unselected word line; and
a voltage driver configured to apply a turn on voltage continuously to the unselected word line during the applying of the program voltage, during the ramping down of the voltage of the selected word line and when the verify voltage is applied to the selected word line, the turn on voltage provides the set of memory cells connected to the unselected word line in a conductive state.

### Claim 10 (depends on 1)

The apparatus of claim 1, wherein:
the voltage of the selected word line decreases from the program voltage at a first rate before the ramping down of the voltage of the selected word line, which is at a second rate which is lower in magnitude than the first rate.

### Claim 11 (depends on 1)

The apparatus of claim 1, wherein:
the sense circuits configured to perform the repeated sensing of the set of memory cells during the ramping down of the voltage of the selected word line in one program loop but not all program loops of a plurality of program loops of the program operation.

### Claim 12 (depends on 1)

The apparatus of claim 1, further comprising:
a set of bit lines connected to the set of memory cells, the sense circuits detect a voltage on the bit lines during the repeated sensing.

### Claim 13

A method, comprising:
setting a control gate voltage of a set of memory cells to a program voltage;
setting the control gate voltage of the set of memory cells to a verify voltage for a verify test;
decreasing the control gate voltage at a first rate from the program voltage to an intermediate voltage which is between the program voltage and the verify voltage;
decreasing the control gate voltage at a second rate, which is lower in magnitude than the first rate, from the intermediate voltage to the verify voltage; and
sensing the set of memory cells during the decreasing of the control gate voltage at the second rate.

### Claim 14 (depends on 13)

The method of claim 13, wherein:
the set of memory cells are not sensed during the decreasing of the control gate voltage at the first rate; and
the set of memory cells are sensed repeatedly during the decreasing of the control gate voltage at the second rate.

### Claim 15 (depends on 13)

The method of claim 13, further comprising:
storing data indicating a voltage range of a tail of a threshold voltage distribution of the set of memory cells; and
adjusting programming setting(s) of a program operation for the set of memory cells based on the voltage range.

### Claim 16

An apparatus, comprising:
a set of memory cells in a block;
means for applying a program voltage to the set of memory cells;
means for decreasing a voltage of the set of memory cells from the program voltage to a verify voltage;
means performing a verify test for the set of memory cells when the voltage of the set of memory cells reaches the verify voltage; and
means for maintaining a turn on voltage on control gates of unselected memory cells in the block during the program voltage, the decreasing of the voltage and the verify test.

### Claim 17

An apparatus, comprising:
a plurality of NAND strings arranged in a block, each NAND string comprising data memory cells connected to data word lines;
a voltage driver configured to apply a program voltage, an evaluation voltage and a verify voltage to a selected data word line; and
sense circuits configured to detect a tail of a threshold voltage distribution of data memory cells connected to the selected data word line during the applying of the evaluation voltage, and to determine whether the data memory cells connected to the selected data word line pass a verify test during the applying of the verify voltage, wherein the evaluation voltage is greater than the verify voltage.

### Claim 18 (depends on 17)

The apparatus of claim 17, wherein:
the NAND strings comprise primary NAND strings and spare NAND strings;
each NAND string comprise a dummy memory cell; and
a control circuit is configured to store data identifying the tail in the dummy memory cells of the spare NAND strings.

### Claim 19 (depends on 17)

The apparatus of claim 17, wherein:
the NAND strings comprise primary NAND strings and spare NAND strings;
each NAND string comprises a select gate transistor; and
a control circuit is configured to store data identifying the tail in the select gate transistors of the spare NAND strings.

### Claim 20 (depends on 17)

The apparatus of claim 17, wherein:
the evaluation voltage is part of a decreasing ramp voltage;
a starting voltage of the decreasing ramp voltage is less than the program voltage; and
a final voltage of the decreasing ramp voltage is the verify voltage.

### Claim 21

A system, comprising:
a controller configured to receive a program command; and
a memory die connected to the controller, the memory die comprises:
a set of connected memory cells;
a voltage driver configured to, in response to the program command, apply a control gate voltage at a program level to the set of connected memory cells, step down the control gate voltage from the program level to a reduced level, and ramp down the control gate voltage from the reduced level to a verify level at a controlled ramp rate; and
sense circuits configured to repeatedly sense the set of connected memory cells during the ramp down of the control gate voltage, and configured to sense the set of connected memory cells during the application of the control gate voltage at the verify level.

### Claim 22 (depends on 1)

The apparatus of claim 1, wherein:
the ramping down of the voltage of the selected word line is at a controlled rate.