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US 10,482,976 B2Granted
Memory device performing UV-assisted erase operation
AssigneeSK hynix Inc.
InventorJin Yong Oh
Life of this patent
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Abstract
A nonvolatile memory device includes: a plurality of word lines that are stacked; a pillar structure that penetrates through the word lines in a vertical direction; and a voltage supplier suitable for supplying a plurality of biases that are required according to an operation mode, to the word lines and the pillar structure. The pillar structure includes: a vertical channel region disposed in a core; and a laser diode structure disposed between the word lines and the vertical channel region to surround a periphery of the vertical channel region.
Claims14
A nonvolatile memory device, comprising:
- a plurality of word lines that are stacked;
- a pillar structure that penetrates through the word lines in a vertical direction;
- and
- a voltage supplier suitable for supplying a plurality of biases that are required according to an operation mode, to the word lines and the pillar structure,
- wherein the pillar structure includes:
- a vertical channel region disposed in a core;
- and
- a laser diode structure disposed between the word lines and the vertical channel region to surround a periphery of the vertical channel region.
5 more elements
A nonvolatile memory device, comprising:
- a plurality of word lines that are stacked;
- a vertical channel region that penetrates through the word lines in a vertical direction;
- and
- a GaN-based laser diode structure that is disposed to surround the vertical channel region and emits ultraviolet light during an erase operation.
1 more element
Dependencies are inferred from the claim text.