1T1D DRAM cell and access method and associated device for DRAM
OwnerChao-Jing Tanginventor
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OwnerChao-Jing Tanginventor
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The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM.
An access device applied to a Dynamic Random-Access Memory cell, a circuit of said memory cell comprises a data transmission node and a transmission control node, said data transmission node is applied for writing and reading data, said transmission control node is applied for controlling data input and output;
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