# US 10,481,748 B2 · Display panel and display apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,481,748 B2 - Document ID: US10481748B2 - Status: Granted - Kind: B2 - Application number: 15/813,474 - Filed: 2017-11-15 - Published: 2018-03-15 - Granted: 2019-11-19 - Earliest claimed: 2017-06-30 - Assignees: Xiamen Tianma Micro-Electronics Co., Ltd. - Applicants: Xiamen Tianma Micro-Electronics Co., Ltd. - Inventors: Zaiwen Zhu; Jieliang Li; Yong Yuan; Feng Lu; Qijun Yao; Hongming Chen - Web page: https://patentgrep.com/patent/US10481748B2 ## CPC - G01L 1/2262: {involving simple electrical bridges} - G01L 1/2293: {of the semi-conductor type} - G02F 1/13338: {Input devices, e.g. touch panels} - G02F 1/1339: Gaskets; Spacers; Sealing of cells - G02F 1/136209: {Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element} - G02F 1/136286: {Wiring, e.g. gate line, drain line} - G06F 3/04142: {the force sensing means being located peripherally, e.g. disposed at the corners or at the side of a touch sensing plate} - G06F 3/045: using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact - H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/133388: {with constructional differences between the display region and the peripheral region} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - G02F 1/13685: {Top gates} - G02F 2202/104: poly-Si - G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G) - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A display panel and a display apparatus are provided. The display panel includes a display area and a non-display area surrounding the display area. The display panel includes at least one semiconductor pressure sensor disposed in the non-display area. Each semiconductor pressure sensor has a planar structure and is provided with a hollow-out zone. In various embodiments of the present disclosure, the pressure detection accuracy of the pressure sensors is improved and the user experience is enhanced. ## Claims ### Claim 1 A display panel, comprising: an array substrate; a color filter, configured to be opposite to the array substrate; a display area and a non-display area surrounding the display area disposed on the array substrate; at least one semiconductor pressure sensor disposed in the non-display area, wherein the at least one semiconductor pressure sensor has a planar structure, and is provided with a hollow-out zone; wherein the array substrate is provided with a plurality of pixel units in the display area, wherein the plurality of pixel units each comprises a thin film transistor; wherein the semiconductor pressure sensor and an active layer of the thin film transistor are arranged in a same layer; wherein the display panel further comprises: a sealant, arranged between the color filter and the array substrate and in the non-display area of the display panel; and wherein a perpendicular projection of the sealant on the array substrate partially overlaps with the hollow-out zone of the at least one semiconductor pressure sensor. ### Claim 2 (depends on 1) The display panel according to claim 1, wherein a geometric center of the hollow-out zone coincides with a geometric center of an outline of the semiconductor pressure sensor. ### Claim 3 (depends on 1) The display panel according to claim 1, wherein an outline of the at least one semiconductor pressure sensor is a polygon, the polygon has at least four sides including a first side, a second side, a third side and a fourth side, wherein the first side and the second side are separated by at least one side of the polygon, and the third side and the fourth side are separated by at least one side of the polygon; wherein the at least one semiconductor pressure sensor comprises a first power signal input terminal located at the first side and a second power signal input terminal located at the second side, wherein the first power signal input terminal and the second power signal input terminal are configured to provide a bias voltage signal to the semiconductor pressure sensor; wherein the at least one semiconductor pressure sensor further comprises a first sensing signal measurement terminal located at the third side and a second sensing signal measurement terminal located at the fourth side, wherein the first sensing signal measurement terminal and the second sensing signal measurement terminal are configured to output a pressure detection signal from the semiconductor pressure sensor. ### Claim 4 A display panel, comprising: a display area and a non-display area surrounding the display area; at least one semiconductor pressure sensor disposed in the non-display area, wherein the at least one semiconductor pressure sensor has a planar structure, and is provided with a hollow-out zone; wherein the display area is provided with a plurality of pixel units, wherein the plurality of pixel units each comprises a thin film transistor; wherein the semiconductor pressure sensor and an active layer of the thin film transistor are arranged in a same layer; wherein the display panel further comprises: a color filter, configured to be opposite to the array substrate; and a sealant, wherein the sealant is located in the non-display area of the display panel, between the color filter and the array substrate; and wherein a perpendicular projection of the sealant on the array substrate does not overlap with the at least one semiconductor pressure sensor. ### Claim 5 (depends on 1) The display panel according to claim 1, further comprising: a light shielding layer, wherein the light shielding layer is disposed on the array substrate, and located at a side facing away from the color filter of the at least one semiconductor pressure sensor; wherein a perpendicular projection of the light shielding layer on the array substrate covers the at least one semiconductor pressure sensor; wherein the light shielding layer is provided with an opening area; and wherein a perpendicular projection of the opening area on the array substrate is in the hollow-out area. ### Claim 6 (depends on 4) The display panel according to claim 4, further comprising: a light shielding layer, wherein the light shielding layer is disposed on the array substrate, and located at a side facing away from the color filter of the at least one semiconductor pressure sensor; wherein a perpendicular projection of the light shielding layer on the array substrate covers the at least one semiconductor pressure sensor; and wherein the light shielding layer is provided with an opening area, wherein a perpendicular projection of the opening area on the array substrate is in the hollow-out area. ### Claim 7 (depends on 1) The display panel according to claim 1, wherein the at least one semiconductor pressure sensor is made of polysilicon films. ### Claim 8 (depends on 1) The display panel according to claim 1, wherein the at least one semiconductor pressure sensor is arranged along a long side of the display panel in the non-display area. ### Claim 9 (depends on 8) The display panel according to claim 8, further comprising: a plurality of shift registers, configured to provide scanning signals to the display pane, wherein the at least one semiconductor pressure sensor is disposed between two adjacent shift registers. ### Claim 10 (depends on 1) The display panel according to claim 1, further comprising: a drive circuit, configured to provide a bias voltage to the at least one semiconductor pressure sensor; wherein the first power signal input terminal of the at least one semiconductor pressure sensor located at a same side of the display area is connected with a first signal output terminal of the drive circuit, and the second power signal input terminal of the at least one semiconductor pressure sensor located at the same side of the display area is connected with a second signal output terminal of the drive circuit. ### Claim 11 (depends on 1) A display device having a display panel according to claim 1. ### Claim 12 (depends on 4) The display panel according to claim 4, wherein a geometric center of the hollow-out zone coincides with a geometric center of an outline of the semiconductor pressure sensor. ### Claim 13 (depends on 4) The display panel according to claim 4, wherein: an outline of the at least one semiconductor pressure sensor is a polygon, the polygon has at least four sides including a first side, a second side, a third side and a fourth side, wherein the first side and the second side are separated by at least one side of the polygon, and the third side and the fourth side are separated by at least one side of the polygon; wherein the at least one semiconductor pressure sensor comprises a first power signal input terminal located at the first side and a second power signal input terminal located at the second side, wherein the first power signal input terminal and the second power signal input terminal are configured to provide a bias voltage signal to the semiconductor pressure sensor; wherein the at least one semiconductor pressure sensor further comprises a first sensing signal measurement terminal located at the third side and a second sensing signal measurement terminal located at the fourth side, wherein the first sensing signal measurement terminal and the second sensing signal measurement terminal are configured to output a pressure detection signal from the semiconductor pressure sensor. ### Claim 14 (depends on 4) The display panel according to claim 4, wherein the at least one semiconductor pressure sensor is made in polysilicon films. ### Claim 15 (depends on 4) The display panel according to claim 4, wherein the at least one semiconductor pressure sensor is arranged along a long side of the display panel in the non-display area. ### Claim 16 (depends on 15) The display panel according to claim 15, further comprising: a plurality of shift registers, configured to provide scanning signals to the display panel, wherein the at least one semiconductor pressure sensor is disposed between two of the plurality of adjacent shift registers. ### Claim 17 (depends on 4) The display panel according to claim 4, further comprising: a drive circuit, configured to provide a bias voltage to the at least one semiconductor pressure sensor; wherein the first power signal input terminal of the at least one semiconductor pressure sensor located at a same side of the display area is connected with a first signal output terminal of the drive circuit, and the second power signal input terminal of the at least one semiconductor pressure sensor located at the same side of the display area is connected with a second signal output terminal of the drive circuit. ### Claim 18 (depends on 4) A display device having a display panel according to claim 4.