# US 10,481,489 B2 · Mask plate, method for manufacturing mask plate, method for using mask plate, and device including mask plate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,481,489 B2 - Document ID: US10481489B2 - Status: Granted - Kind: B2 - Application number: 15/537,949 - Filed: 2016-08-11 - Published: 2019-01-17 - Granted: 2019-11-19 - Earliest claimed: 2016-04-01 - Assignees: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd. - Applicants: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd. - Inventors: Kui Liang; Yakun Li; Xiaopeng Cui; Huabin Chen - Web page: https://patentgrep.com/patent/US10481489B2 ## CPC - G02F 1/1362: Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)} - G02F 1/1525: {characterised by a particular ion transporting layer, e.g. electrolyte} - G02F 1/155: Electrodes - G02F 1/161: Gaskets; Spacers; Sealing of cells; Filling or closing of cells - G03F 1/68: Preparation processes not covered by groups G03F1/20 - G03F1/50 - G03F 7/0007: {Filters, e.g. additive colour filters; Components for display devices} - H10D 86/0231: {using masks, e.g. half-tone masks} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/13625: {Patterning using multi-mask exposure} - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A mask plate is provided. The mask plate includes a first transparent substrate. A first transparent electrode, an electrochromic layer and a second transparent electrode are arranged sequentially on the first transparent substrate. The first transparent electrode is configured to be selectively powered so as to form energized regions with different shapes. A method for manufacturing the mask plate, a device including the mask plate, and a method for using the mask plate are further provided. ## Claims ### Claim 1 A mask plate, comprising: a first transparent substrate; first transparent electrode, an electrochromic layer and a second transparent electrode arranged sequentially on the first transparent substrate; and thin film transistor (TFT) array arranged between the first transparent substrate and the first transparent electrode and configured to selectively supply power to the first transparent electrode, herein the first transparent electrode is configured to be selectively powered to form energized regions with different shapes, the first transparent electrode is of a grid-like structure consisting of horizontal electrode lines and longitudinal electrode lines crossing each other. ### Claim 2 (depends on 1) The mask plate according to claim 1, wherein the electrochromic layer comprises an electrochromic material layer, an ion conductive layer and an ion storage layer, and a sealant is provided at a periphery of each of the electrochromic material layer, the ion conductive layer and the ion storage layer. ### Claim 3 (depends on 1) The mask plate according to claim 1, wherein a protection layer is arranged on the second transparent electrode. ### Claim 4 (depends on 1) The mask plate according to claim 1, wherein the second transparent electrode is arranged on a second transparent substrate, and the second transparent substrate and the first transparent substrate are arranged opposite to each other to form a cell, so that the second transparent electrode is arranged between the electrochromic layer and the second transparent substrate. ### Claim 5 (depends on 4) The mask plate according to claim 4, wherein the second transparent electrode is of a grid-like structure consisting of horizontal electrode lines and longitudinal electrode lines crossing each other. ### Claim 6 (depends on 5) The mask plate according to claim 5, wherein another TFT array for supplying power to the second transparent electrode is further arranged between the second transparent electrode and the second transparent substrate. ### Claim 7 (depends on 4) The mask plate according to claim 4, wherein the second transparent electrode comprises an array of electrode blocks. ### Claim 8 (depends on 1) The mask plate according to claim 1, wherein the second transparent electrode is a complete conductive film layer, and the second transparent electrode is directly plated onto the electrochromic layer. ### Claim 9 (depends on 1) The mask plate according to claim 1, wherein an insulation layer is arranged at an intersection between each longitudinal electrode line and a corresponding horizontal electrode line crossing the longitudinal electrode line. ### Claim 10 (depends on 1) The mask plate according to claim 1, wherein each electrode line of the longitudinal electrode lines and the horizontal electrode lines is electrically connected to a drain electrode of a TFT unit of a TFT array adjacent to the electrode line. ### Claim 11 (depends on 1) A method for using the mask plate according to claim 1 in manufacture of a display panel, comprising, with respect to the display panels with different sizes, pre-storing a plurality of schemes for the mask plate in advance, wherein each scheme is provided to enable the mask plate to be provided with a light-shielding pattern corresponding to a corresponding display panel. ### Claim 12 A method for manufacturing a mask plate, comprising: providing a first transparent substrate; providing a thin film transistor (TFT) array on the first transparent substrate; providing a first transparent electrode on the TFT array; forming an electrochromic layer on the first transparent electrode; and providing a second transparent electrode on the electrochromic layer, wherein the first transparent electrode is selectively powered by the TFT array to form energized regions with different shapes, the first transparent electrode is of a grid-like structure consisting of horizontal electrode lines and longitudinal electrode lines crossing each other and each electrode line is connected to a drain electrode of a TFT unit of the TFT array adjacent to the electrode line. ### Claim 13 (depends on 12) The method according to claim 12, wherein the forming the electrochromic layer comprises forming an electrochromic material layer, an ion conductive layer and an ion storage layer sequentially, and the method further comprises providing a sealant at a periphery of each of the electrochromic material layer, the ion conductive layer and the ion storage layer. ### Claim 14 (depends on 12) The method according to claim 12, wherein the providing the first transparent electrode further comprises providing an insulation layer at an intersection between every two electrode lines crossing each other.