# US 10,481,453 B2 · Method of producing display panel board

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- Number: US 10,481,453 B2
- Document ID: US10481453B2
- Status: Granted
- Kind: B2
- Application number: 16/124,223
- Filed: 2018-09-07
- Published: 2019-03-14
- Granted: 2019-11-19
- Earliest claimed: 2017-09-13
- Assignees: Sharp Kabushiki Kaisha
- Applicants: Sharp Kabushiki Kaisha
- Inventors: Yoshihito Hara; Tohru Daitoh; Hajime Imai; Masaki Maeda; Hideki Kitagawa; Toshikatsu Itoh; Tatsuya Kawasaki
- Web page: https://patentgrep.com/patent/US10481453B2

## CPC

- G02F 1/136286: {Wiring, e.g. gate line, drain line}
- H10H 20/012: {having light-emitting regions comprising only Group II-IV materials}
- H10H 20/823: comprising only Group II-VI materials, e.g. ZnO
- H10H 20/833: Transparent materials
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10P 14/3426: {Oxides}
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- G02F 1/136295: {Materials; Compositions; Manufacture processes}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes a pixel electrode forming process of forming a pixel electrode formed from a transparent electrode film on a gate insulation film that covers a gate electrode, a semiconductor film forming process being performed after the pixel electrode forming process and forming a semiconductor film on the gate insulation film such that a part of the semiconductor film covers the pixel electrode, an annealing process being performed after the semiconductor film forming process and processing the semiconductor film with annealing, and an etching process being performed after the annealing process and processing the semiconductor film with etching such that a channel section overlapping the gate electrode is formed in a same layer as the pixel electrode. The etching and the annealing performed on one of the transparent electrode film and the semiconductor film is less likely to adversely affect another one of the films.

## Claims

### Claim 1

A method of producing a display panel board comprising:
a pixel electrode forming process of forming a pixel electrode formed from a transparent electrode film on a gate insulation film that covers a gate electrode;
a semiconductor film forming process of forming a semiconductor film on the gate insulation film such that a part of the semiconductor film covers the pixel electrode, the semiconductor film forming process being performed after the pixel electrode forming process;
an annealing process of processing the semiconductor film with annealing, the annealing process being performed after the semiconductor film forming process; and
an etching process of processing the semiconductor film with etching such that a channel section overlapping the gate electrode is formed in a same layer as the pixel electrode, the etching process being performed after the annealing process.

### Claim 2 (depends on 1)

The method according to claim 1, wherein
the transparent electrode film is formed from indium tin oxide (ITO), and
the semiconductor film is formed from an oxide semiconductor containing indium (In), gallium (Ga), zinc (Zn), and oxygen (O).

### Claim 3 (depends on 2)

The method according to claim 2, wherein in the annealing process, the annealing treatment is performed at a temperature from 350° C. to 450° C.

### Claim 4 (depends on 1)

The method according to claim 1, further comprising a drain forming process of forming a drain electrode and a drain line that connect the channel section and the pixel electrode, the drain forming process being performed after the etching process.