# US 10,481,298 B2 · Photonic diode and method of manufacturing the same

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- Number: US 10,481,298 B2
- Document ID: US10481298B2
- Status: Granted
- Kind: B2
- Application number: 16/117,027
- Filed: 2018-08-30
- Published: 2019-02-28
- Granted: 2019-11-19
- Earliest claimed: 2017-08-31
- Assignees: Postech Academy-Industry Foundation
- Applicants: POSTECH Academy-Industry Foundation
- Inventors: Junsuk Rho; Minkyung Kim; Gwanho Yoon; Inki Kim
- Web page: https://patentgrep.com/patent/US10481298B2

## CPC

- G02B 1/005: {made of photonic crystals or photonic band gap materials (photonic band-gap structures or photonic lattices in integrated optics G02B6/1225; photonic band-gap structures or photonic lattices in optical fibres G02B6/02295)}
- G02B 6/1225: {comprising photonic band-gap structures or photonic lattices}
- G02F 1/0136: {for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation (G02F1/0353 takes precedence)}
- G02B 2006/12166: {Manufacturing methods}
- G02F 2202/32: Photonic crystals
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A photonic diode includes a first meta-material structure having a first bar and a second meta-material structure having a second bar arranged in a direction perpendicular to the first bar. The first bar and the second bar are separated from each other. Further, the first bar and the second bar are at least partially overlapped when viewed from a light propagation direction.

## Claims

### Claim 1

A photonic diode comprising:
a first meta-material structure having a first bar; and
a second meta-material structure having a second bar arranged in a direction perpendicular to the first bar,
wherein the first bar and the second bar are separated from each other and the first bar and the second bar are at least partially overlapped when viewed from a light propagation direction.

### Claim 2 (depends on 1)

The photonic diode according to claim 1, wherein the first bar has a first arm and a second arm extending from both ends thereof, the first arm and the second arm being formed in opposite directions to each other with respect to the first bar; and the second bar has a third arm and a fourth arm extending from both ends thereof, the third arm and the fourth arm being formed in opposite directions to each other with respect to the second bar.

### Claim 3 (depends on 2)

The photonic diode according to claim 2, wherein the first arm and the second arm are formed perpendicular to the first bar, and the third arm and the fourth arm are formed perpendicular to the second bar.

### Claim 4 (depends on 1)

The photonic diode according to claim 1, wherein the first meta-material structure and the second meta-material structure include gold (Au).

### Claim 5 (depends on 1)

The photonic diode according to claim 1, wherein the first meta-material structure and the second meta-material structure are embedded in a silicon hexahedron.

### Claim 6 (depends on 1)

The photonic diode according to claim 1, wherein a center of the first bar of the first meta-material structure is overlapped with a center of the second bar of the second meta-material structure when viewed from the light propagation direction.

### Claim 7 (depends on 1)

The photonic diode according to claim 1, wherein lengths of the first bar and the second bar are from 300 nm to 400 nm and a distances separated from the first bar and the second bar is from 180 nm to 220 nm.

### Claim 8 (depends on 3)

The photonic diode according to claim 3, wherein lengths of the first bar and the second bar are from 300 nm to 400 nm; a distance separated from the first bar and the second bar is from 180 nm to 220 nm; lengths of the first arm and the second arm are from 100 nm to 200 nm; widths of the first meta-material structure and the second meta-material structure are from 40 nm to 60 nm; and longitudinal lengths of cross sections of the first arm, the second arm and the fourth arm are from 50 nm to 70 nm.

### Claim 9 (depends on 5)

The photonic diode according to claim 5, wherein the silicon hexahedron has a shape of a cube and a length of one side of the silicon hexahedron is from 400 nm and 600 nm.

### Claim 10

A three-dimensional meta-material structure comprising:
a first meta-material structure having a first bar; and
a second meta-material structure having a second bar arranged in a direction perpendicular to the first bar,
wherein the first bar and the second bar are separated from each other and are at least partially overlapped when viewed from a light propagation direction.