# US 10,481,146 B2 · Gas sensor and information processing system

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- Number: US 10,481,146 B2
- Document ID: US10481146B2
- Status: Granted
- Kind: B2
- Application number: 15/070,325
- Filed: 2016-03-15
- Published: 2016-11-24
- Granted: 2019-11-19
- Earliest claimed: 2015-05-22
- Assignees: Fujitsu Limited
- Applicants: Fujitsu Limited
- Inventors: Satoru Momose; Kazuaki Karasawa; Osamu Tsuboi
- Web page: https://patentgrep.com/patent/US10481146B2

## CPC

- G01N 33/497: of gaseous biological material, e.g. breath
- G01N 27/12: of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid {, for detecting components in the fluid}
- A61B 5/082: {Evaluation by breath analysis, e.g. determination of the chemical composition of exhaled breath (A61B5/083, A61B5/091 take precedence)}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)

## Abstract

A gas sensor includes a p-type semiconductor layer in which a surface at a contacting side with detection target gas is covered with tertiary amine and two electrodes electrically coupled with each other through the p-type semiconductor layer.

## Claims

### Claim 1

A gas sensor, comprising:
a p-type semiconductor layer whose first surface as a top surface or as at least a portion of a top surface is covered with tertiary amine such that aldehyde is detected selectively; and
two electrodes electrically coupled with each other through the p-type semiconductor layer, the two electrodes being in contact with a second surface as opposing bottom surfaces or as portions of opposite sides of the portion of the top surface other than the first surface of the p-type semiconductor layer,
wherein the surface of the tertiary amine is exposed such that the detection target gas contacts at least with the surface of the tertiary amine over a region between the two electrodes, and
the p-type semiconductor layer contains any one material selected from the group consisting of cuprous bromide, cuprous oxide, cuprous sulfide, silver oxide, silver bromide and silver sulfide.

### Claim 2 (depends on 1)

The gas sensor according to claim 1, wherein, in the tertiary amine, all of atomic groups bonding to nitrogen atoms of an amino group are an alkyl group.

### Claim 3 (depends on 1)

The gas sensor according to claim 1, wherein the two electrodes are provided in a spaced relationship from each other on the second surface positioned at the opposite side to the first surface side of the p-type semiconductor layer.

### Claim 4 (depends on 1)

The gas sensor according to claim 1, further comprising a detection unit coupled with the two electrodes and configured to detect variation of an electric characteristic of the p-type semiconductor layer.

### Claim 5

An information processing system, comprising:
a gas sensor including a p-type semiconductor layer whose first surface as a top surface or as at least a portion of a top surface is covered with tertiary amine such that aldehyde is detected selectively and two electrodes electrically coupled with each other through the p-type semiconductor layer, the two electrodes being in contact with a second surface as opposing bottom surfaces or as portions of opposite sides of the portion of the top surface other than the first surface of the p-type semiconductor layer, wherein the surface of the tertiary amine is exposed such that the detection target gas contacts at least with the surface of the tertiary amine over a region between the two electrodes, and the p-type semiconductor layer contains any one material selected from the group consisting of cuprous bromide, cuprous oxide, cuprous sulfide, silver oxide, silver bromide and silver sulfide; and
a computer configured to process data obtained by the gas sensor.