# US 10,481,006 B1 · Thermal sensing layer for microbolometer and method of making the same

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- Number: US 10,481,006 B1
- Document ID: US10481006B1
- Status: Granted
- Kind: B1
- Application number: 16/262,454
- Filed: 2019-01-30
- Granted: 2019-11-19
- Earliest claimed: 2019-01-30
- Assignees: King Saud University
- Applicants: King Saud University
- Inventors: Mohamed Ramy Abdel-Rahman; Mohammad Abdulaziz Alduraibi; Bouraoui Ilahi
- Web page: https://patentgrep.com/patent/US10481006B1

## CPC

- G01J 5/024: {Special manufacturing steps or sacrificial layers or layer structures}
- G01J 5/023: {Particular leg structure or construction or shape; Nanotubes}
- G01J 5/046: {Materials; Selection of thermal materials}
- G01J 5/0853: {having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid}
- G01J 5/20: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- H10F 77/12: Active materials
- G01J 2005/0077: {Imaging}
- G01J 2005/103: {Absorbing heated plate or film and temperature detector}
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

The thermal sensing layer for a microbolometer includes a Ge1-xSnx film layer, where 0.17≤x≤0.25. The Ge1-xSnx film layer may be deposited on a substrate layer, such as pure silicon. An additional layer of silicon dioxide may be added, such that the silicon dioxide layer is sandwiched between the silicon substrate and the Ge1-xSnx film, In order to make the Ge1-xSnx thin film layer, germanium (Ge) and tin (Sn) are simultaneously sputter deposited on the substrate, where the atomic ratio of germanium to tin is between 0.83:0.17 and 0.75:0.25 inclusive. The sputter deposition may occur in an argon atmosphere, with the germanium having a deposition rate of 9.776 nm/min, and with the tin having a deposition rate between 2.885 nm/min and 4.579 nm/min.

## Claims

### Claim 1

A thermal sensing layer for a microbolometer, comprising a thin film of amorphous Ge1-xSnx, wherein 0.17≤x≤0.25.

### Claim 2 (depends on 1)

The thermal sensing layer for a microbolometer as recited in claim 1, further comprising a pure silicon substrate layer, wherein said Ge1-xSnx film is deposited on said substrate layer.

### Claim 3 (depends on 2)

The thermal sensing layer for a microbolometer as recited in claim 2, further comprising a silicon dioxide layer, the silicon dioxide layer being sandwiched between the silicon layer and the GE1-xSnx film.

### Claim 4 (depends on 1)

The thermal sensing layer for a microbolometer as recited in claim 1, wherein the Ge1-xSnx film comprises Ge0.83Sn0.17.

### Claim 5 (depends on 1)

The thermal sensing layer for a microbolometer as recited in claim 1, wherein the Ge1-xSnx film comprises Ge0.78Sn0.22.

### Claim 6 (depends on 1)

The thermal sensing layer for a microbolometer as recited in claim 1, wherein the Ge1-xSnx film comprises Ge0.75Sn0.25.