# US 10,480,097 B2 · Synthetic CVD diamond

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- Number: US 10,480,097 B2
- Document ID: US10480097B2
- Status: Granted
- Kind: B2
- Application number: 16/352,934
- Filed: 2019-03-14
- Published: 2019-07-11
- Granted: 2019-11-19
- Earliest claimed: 2009-12-22
- Assignees: Element Six Technologies Limited
- Applicants: Element Six Technologies Limited
- Inventors: Daniel James Twitchen; Andrew Michael Bennett; Rizwan Uddin Ahmad Khan; Philip Maurice Martineau
- Web page: https://patentgrep.com/patent/US10480097B2

## CPC

- C30B 29/04: Diamond
- C01B 32/25: Diamond
- C01B 32/26: Preparation (by using ultra-high pressure B01J3/06; by crystal growth C30B29/04)
- C30B 25/165: {the flow of the reactive gases}
- C30B 25/186: {being specially pre-treated by, e.g. chemical or physical means}
- C30B 25/20: the substrate being of the same materials as the epitaxial layer
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}

## Abstract

The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.

## Claims

### Claim 1

A chemical vapour deposition (CVD) method for synthesizing diamond material on a substrate in a synthesis environment, said method comprising:
providing the substrate;
providing a source gas;
dissociating the source gas; and
allowing homoepitaxial diamond synthesis on the substrate;
wherein the synthesis environment comprises nitrogen at an atomic concentration of from about 0.4 ppm to about 50 ppm; and
and wherein the source gas comprises:
a) an atomic fraction of hydrogen, Hf, from about 0.40 to about 0.75;
b) an atomic fraction of carbon, Cf, from about 0.15 to about 0.30;
c) an atomic fraction of oxygen, Of, from about 0.13 to about 0.40;
wherein HfCfOf=1;
wherein the ratio of atomic fraction of carbon to the atomic fraction of oxygen, Cf:Of, satisfies the ratio of about 0.45:1<Cf:Of<about 1.25:1;
wherein the source gas comprises hydrogen atoms added as hydrogen molecules, H2, at an atomic fraction of the total number of hydrogen, oxygen and carbon atoms present of between 0.05 and 0.40; and
wherein the atomic fractions Hf, Cf and Of are fractions of the total number of hydrogen, oxygen and carbon atoms present in the source gas.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the process is carried out at a pressure greater than Plower Torr, where Plower=Parc−Y and Parc=170(Hf+0.25)+X, where Y=50 Torr and X is from about 20 to about −50 and Parc is the pressure of the onset of unipolar arcing in the process.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the source gas is dissociated by microwaves.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the frequency of the microwaves is from about 800 MHz to about 1000 MHz.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the substrate is maintained at a temperature of from about 750° C. to about 1000° C.