# US 10,480,096 B2 · Diamond substrate

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,480,096 B2
- Document ID: US10480096B2
- Status: Granted
- Kind: B2
- Application number: 16/026,342
- Filed: 2018-07-03
- Published: 2018-11-01
- Granted: 2019-11-19
- Earliest claimed: 2013-09-30
- Assignees: Adamant Namiki Precision Jewel Co., Ltd.
- Applicants: Adamant Namiki Precision Jewel Co., Ltd.
- Inventors: Hideo Aida; Koji Koyama; Kenjiro Ikejiri; Seongwoo Kim
- Web page: https://patentgrep.com/patent/US10480096B2

## CPC

- C30B 25/18: characterised by the substrate
- C23C 16/01: on temporary substrates, e.g. substrates subsequently removed by etching
- C23C 16/274: {using microwave discharges}
- C30B 25/105: {by irradiation or electric discharge}
- C30B 29/04: Diamond
- C30B 33/02: Heat treatment (C30B33/04, C30B33/06 take precedence)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

## Claims

### Claim 1

A diamond substrate,
wherein the diamond substrate consists of diamond single crystals, and is a self-supported substrate,
a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter ranging from two inches to eight inches, and
a full width at half maximum of an X-ray rocking curve on a surface of the diamond substrate is equal to or less than 300 seconds over the entire surface.

### Claim 2 (depends on 1)

The diamond substrate according to any one of claim 1, wherein surface roughness Ra of the surface of the diamond substrate is less than 1 nm.

### Claim 3 (depends on 2)

The diamond substrate according to claim 2, wherein the surface roughness Ra is equal to or less than 0.1 nm.

### Claim 4 (depends on 1)

The diamond substrate according to any one of claim 1, wherein a thickness of the diamond substrate ranges from 0.05 mm to 3.0 mm.

### Claim 5 (depends on 4)

The diamond substrate according to claim 4, wherein the thickness ranges from 0.3 mm to 3.0 mm.

### Claim 6 (depends on 4)

The diamond substrate according to claim 4, wherein the thickness of the diamond substrate ranges from 0.5 mm to 0.7 mm.