# US 10,480,095 B2 · System for rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow

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- Number: US 10,480,095 B2
- Document ID: US10480095B2
- Status: Granted
- Kind: B2
- Application number: 15/874,785
- Filed: 2018-01-18
- Published: 2018-06-07
- Granted: 2019-11-19
- Earliest claimed: 2011-03-16
- Assignees: ASM America, Inc.
- Applicants: ASM America, Inc.
- Inventors: Michael W. Halpin; Paul T. Jacobson
- Web page: https://patentgrep.com/patent/US10480095B2

## CPC

- C30B 25/16: Controlling or regulating (controlling or regulating in general G05)
- C23C 16/02: Pretreatment of the material to be coated (C23C16/04 takes precedence)
- C23C 16/0209: {by heating}
- C30B 25/10: Heating of the reaction chamber or the substrate
- C30B 29/06: Silicon
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

## Claims

### Claim 1

A system for vapor deposition on a semiconductor substrate, comprising:
a reaction chamber;
a reducing agent source connected to feed a gas containing reducing agent into the reaction chamber;
one or more reactant sources each connected to feed a reactant gas into the reaction chamber;
a substrate support housed within the reaction chamber, wherein the reaction chamber is configured to convey a generally horizontal flow of reactant gases above the substrate support along a gas flow path;
an upper bank of substantially linear heat lamps above the substrate support, each lamp of the upper bank being oriented substantially perpendicular to the gas flow path and substantially parallel to a plane in which a substrate resting upon the substrate support would reside;
a lower bank of heat lamps below the substrate support; and
a computer programmed to control the upper and lower banks of heat lamps, gas flow from the reducing agent source, and the one or more reactant sources to (1) provide power to the upper and lower banks of lamps to subject a substrate resting upon the substrate support to a bake in the presence of said gas containing the reducing agent for less than 45 seconds, (2) stabilize the substrate temperature after the bake, and (3) feed said one or more reactant gases into the reaction chamber to deposit a layer by vapor deposition directly onto the substrate after stabilizing the temperature.

### Claim 2 (depends on 1)

The system of claim 1, further comprising a robot configured to transfer a substrate into and out of the reaction chamber.

### Claim 3 (depends on 1)

The system of claim 1, wherein the heat lamps of the lower bank are substantially linear and oriented substantially perpendicular to the heat lamps of the upper bank, and substantially parallel to the upper surface of the substrate on the substrate support.

### Claim 4 (depends on 1)

The system of claim 1, wherein the substrate support comprises a susceptor.

### Claim 5 (depends on 1)

The system of claim 1, wherein the computer is programmed to maintain a ratio of power delivered to the upper bank of lamps to power delivered to the lower bank of lamps at a value greater than a neutral ratio of power between the upper bank and the lower bank during the bake, wherein the neutral ratio of power is defined as a power ratio that is optimized to equalize the substrate temperature and the substrate support temperature.

### Claim 6 (depends on 5)

The system of claim 5, wherein the programmed ratio of power is greater than 25% higher than the neutral ratio.

### Claim 7 (depends on 1)

The system of claim 1, wherein the computer is programmed to maintain the substrate at a uniform temperature during the bake and deposition.

### Claim 8 (depends on 1)

The system of claim 1, wherein the computer is programmed to deliver more power to one or more of the upper bank's heat lamps positioned in an upstream portion of the gas flow path, relative to power delivered to lamps of the upper bank that primarily heat a center of the substrate, the computer also programmed to simultaneously deliver more power to one or more of the upper bank's heat lamps positioned in a downstream portion of the gas flow path, relative to the power delivered to the lamps that primarily heat a center of the substrate.

### Claim 9 (depends on 1)

The system of claim 1, wherein the computer is programmed to raise the substrate temperature from below 500° C. to greater than 500° C. after loading the substrate onto the substrate support.

### Claim 10 (depends on 1)

The system of claim 1, wherein the computer is programmed to deliver power non-uniformly to the heat lamps of the upper bank such that the temperature at an edge of the substrate is within 5° C. of the temperature at a center of the substrate during the bake.

### Claim 11 (depends on 1)

The system of claim 1, wherein stabilizing the substrate temperature comprises lowering the substrate temperature to a temperature suitable for vapor deposition within about 30 seconds after the bake.

### Claim 12 (depends on 1)

The system of claim 1, wherein the computer is programmed to provide power to the upper and lower banks of lamps to subject a substrate resting upon the substrate support to a bake in the presence of said gas containing the reducing agent for less than about 30 seconds.

### Claim 13

A system for vapor deposition on a semiconductor substrate, comprising:
a reaction chamber configured to support a substrate and flow reaction vapors parallel to a major surface of the substrate along a gas flow path;
a reducing vapor source connected to the reaction chamber;
one or more deposition vapor sources each connected to the reaction chamber;
an upper bank of substantially linear heat lamps above the substrate, each lamp of the upper bank being oriented substantially perpendicular to the gas flow path and substantially parallel to the major surface of the substrate;
a lower bank of heat lamps below the substrate; and
a computer programmed to control the upper and lower banks of heat lamps, reducing vapor flow from the reducing vapor source through the reaction chamber, and deposition vapor flow from the one or more deposition vapor sources through the reaction chamber to (1) provide power to the upper and lower banks of lamps to subject the substrate to a bake while exposed to the reducing vapor flow for less than 45 seconds, and (2) deposit a layer by vapor deposition directly onto the substrate while exposed to the deposition vapor flow after the bake for less than 45 seconds.

### Claim 14 (depends on 13)

The system of claim 13, further comprising a substrate support within the reaction chamber to support the substrate from below, wherein the computer is programmed to maintain a ratio of power delivered to the upper bank of lamps to power delivered to the lower bank of lamps at a value greater than a neutral ratio of power between the upper bank and the lower bank during the bake, wherein the neutral ratio of power is defined as a power ratio that is optimized to equalize a substrate temperature and a substrate support temperature.

### Claim 15 (depends on 13)

The system of claim 13, wherein the computer is programmed to deliver more power to one or more of the upper bank's heat lamps positioned in an upstream portion of the gas flow path, relative to power delivered to lamps of the upper bank that primarily heat a center of the substrate, the computer also programmed to simultaneously deliver more power to one or more of the upper bank's heat lamps positioned in a downstream portion of the gas flow path, relative to the power delivered to the lamps that primarily heat a center of substrate center.

### Claim 16 (depends on 13)

The system of claim 13, wherein the computer is further programmed to stabilize a substrate temperature prior to depositing the layer by lowering a substrate temperature to a temperature suitable for vapor deposition within about 30 seconds after the bake.