# US 10,480,064 B2 · Reaction chamber passivation and selective deposition of metallic films

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- Number: US 10,480,064 B2
- Document ID: US10480064B2
- Status: Granted
- Kind: B2
- Application number: 16/040,844
- Filed: 2018-07-20
- Published: 2019-02-21
- Granted: 2019-11-19
- Earliest claimed: 2016-06-08
- Assignees: ASM IP Holding B.V.
- Applicants: ASM IP Holding B.V.
- Inventors: Delphine Longrie; Antti Juhani Niskanen; Han Wang; Qi Xie; Jan Willem Maes; Shang Chen; Toshiharu Watarai; Takahiro Onuma; Dai Ishikawa; Kunitoshi Namba
- Web page: https://patentgrep.com/patent/US10480064B2

## CPC

- C23C 16/02: Pretreatment of the material to be coated (C23C16/04 takes precedence)
- C23C 16/06: characterised by the deposition of metallic material
- C23C 16/345: {Silicon nitride}
- C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof}
- C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45536: {Use of plasma, radiation or electromagnetic fields}
- C23C 16/56: After-treatment
- H10P 14/432: {using selective deposition}
- H10W 20/037: {the barrier, adhesion or liner layers being on top of a main fill metal}
- H10W 20/038: {covering conductive structures (H10W20/037 takes precedence)}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/096: {by contacting with gases, liquids or plasmas}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

## Claims

### Claim 1

A process for depositing a thin film on a substrate selectively, the process comprising:
passivating an interior surface of a reaction chamber by a first vapor deposition process while the reaction chamber does not contain the substrate, wherein the first vapor deposition process comprises one or more deposition cycles in which the interior surface of the reaction chamber is contacted with a first vapor-phase precursor and a second vapor-phase precursor;
selectively depositing a thin film on the substrate in the passivated reaction chamber by a second vapor deposition process comprising one or more selective deposition cycles; and
repeating passivating the interior surface of the reaction chamber after two or more selective deposition cycles have been performed.

### Claim 2 (depends on 1)

The process of claim 1, wherein passivating is repeated after every 50 or more selective deposition cycles.

### Claim 3 (depends on 1)

The process of claim 1, further comprising subjecting the interior surface of the reaction chamber to an etch process prior to passivating the interior surface of the reaction chamber.

### Claim 4 (depends on 1)

The process of claim 1, wherein the first vapor deposition process is an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced atomic layer deposition (PEALD) process or a plasma enhanced chemical vapor deposition (PECVD) process.

### Claim 5 (depends on 1)

The process of claim 1, wherein the first vapor-phase precursor is a silicon precursor and the second vapor-phase precursor is a nitrogen precursor.

### Claim 6 (depends on 5)

The process of claim 5, wherein the first vapor-phase precursor comprises disilane and the second vapor-phase precursor comprises one or more of atomic nitrogen, nitrogen radicals, and nitrogen plasma and one or more of atomic hydrogen, hydrogen radicals and hydrogen plasma.

### Claim 7 (depends on 1)

The process of claim 1, wherein passivating comprises depositing SiN on the interior surface of the reaction chamber.

### Claim 8 (depends on 1)

The process of claim 1, wherein passivating comprises depositing a passivation layer that does not comprise pure metal or pure silicon.

### Claim 9 (depends on 8)

The process of claim 8, wherein the passivation layer comprises metal oxide.

### Claim 10 (depends on 9)

The process of claim 9, wherein the metal oxide comprises tungsten.

### Claim 11 (depends on 1)

The process of claim 1, additionally comprising subjecting the substrate to a first surface treatment process prior to selectively depositing the thin film on the substrate.

### Claim 12 (depends on 11)

The process of claim 11, wherein the substrate comprises a first metallic surface and a second surface comprising silicon.

### Claim 13 (depends on 12)

The process of claim 12, wherein the first surface treatment process removes organic material present on the first metallic surface.

### Claim 14 (depends on 12)

The process of claim 12, wherein the first surface treatment process removes a passivation layer present on the first metallic surface.

### Claim 15 (depends on 12)

The process of claim 12 wherein the thin film is selectively deposited on the first metallic surface of the substrate relative to the second surface of the substrate.

### Claim 16 (depends on 11)

The process of claim 11, wherein the first surface treatment process comprises exposing the substrate to a plasma.

### Claim 17 (depends on 11)

The process of claim 11, wherein the first surface treatment process comprises exposing the substrate to a treatment reactant comprising formic acid or an alcohol.

### Claim 18 (depends on 1)

The process of claim 1, further wherein the selective deposition cycle comprises contacting the substrate with a first precursor comprising silicon or born.

### Claim 19 (depends on 18)

The process of claim 18, wherein a layer of first material comprising silicon or boron is formed on the first metallic surface relative to the second surface comprising silicon.

### Claim 20 (depends on 19)

The process of claim 19, further comprising converting the first material on the first metallic surface to a second metallic material by exposing the first material to a second precursor comprising metal.