# US 10,480,063 B2 · Capacitive coupled plasma source for sputtering and resputtering

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- Number: US 10,480,063 B2
- Document ID: US10480063B2
- Status: Granted
- Kind: B2
- Application number: 15/260,841
- Filed: 2016-09-09
- Published: 2017-06-22
- Granted: 2019-11-19
- Earliest claimed: 2015-12-21
- Assignees: IonQuest Corp.
- Applicants: IonQuest LLC
- Inventors: Roman Chistyakov; Bassam Hanna Abraham
- Web page: https://patentgrep.com/patent/US10480063B2

## CPC

- C23C 14/354: {Introduction of auxiliary energy into the plasma}
- C23C 14/0057: {using reactive gases other than O2, H2O, N2, NH3 or CH4}
- C23C 14/0605: {Carbon}
- C23C 14/14: Metallic material, boron or silicon
- C23C 14/345: {using substrate bias}
- C23C 14/3485: {using pulsed power to the target}
- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- C23C 16/505: using radio frequency discharges
- H01J 37/321: {the radio frequency energy being inductively coupled to the plasma}
- H01J 37/32825: {Working under atmospheric pressure or higher}
- H01J 37/3405: {Magnetron sputtering}
- H01J 37/3417: {Arrangements}
- H01J 37/3426: {Material}
- H01J 37/3435: {Target holders (includes backing plates and endblocks)}
- H01J 37/345: {Magnet arrangements in particular for cathodic sputtering apparatus (material of magnets or magnets in general H01F1/00, H01F7/00)}
- H01J 37/3452: {Magnet distribution}
- H01J 37/3455: {Movable magnets}
- H01J 37/3464: {Operating strategies}
- H01J 37/3467: {Pulsed operation, e.g. HIPIMS}
- H10P 14/44: Physical vapour deposition [PVD]
- H10W 20/033: {in openings in dielectrics}
- H10W 20/042: {the barrier, adhesion or liner layers being seed or nucleation layers}
- H10W 20/057: {by selectively depositing, e.g. by using selective CVD or plating}
- H10W 20/059: {by reflowing or applying pressure}
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/425: {Barrier, adhesion or liner layers}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An ionized physical vapor deposition (I-PVD) source includes an electrically and magnetically enhanced radio frequency (RF) diode, which has magnetic field lines directed substantially perpendicular to a cathode that terminate on an electrode positioned between an anode around the cathode. The anode forms a gap and the electrode is positioned behind the gap. An RF power supply connected to the cathode generates RF discharge. The cathode is inductively grounded to prevent forming a constant voltage bias during RF discharge. The electrons drift between the cathode and the gap, thereby producing ionization and forming high density plasma. The electrons drift and energy are controlled by applying different voltage potentials to the electrode. The I-PVD source is positioned in a vacuum chamber to form an I-PVD apparatus that generates ions from sputtered target material atoms and deposition. During sputtering, the substrate is biased. The I-PVD source performs chemically enhanced ionized physical vapor deposition (CE-IPVD).

## Claims

### Claim 1

A method of ionized physical vapor deposition (I-PVD) sputtering of a layer on a substrate, the method comprising:
positioning a cathode, an anode, and a cathode magnet assembly in a vacuum chamber;
providing a gap inside the anode around the cathode, a cusp magnetic field being provided in the gap, at least a portion of magnetic field lines associated with the cusp magnetic field passing through the gap and terminating on the cathode magnet assembly;
positioning an electrode in the gap;
providing a noble gas selected to sputter target material;
applying radio frequency (RF) power to the cathode, thereby generating plasma discharge that ionizes sputtered target material;
applying voltage to the electrode; and
applying a negative bias voltage to the substrate, thereby attracting positively charged sputtered material ions to the substrate.

### Claim 2 (depends on 1)

The method, as defined by claim 1, wherein a value of the negative bias voltage on the substrate is in a range of about 10 to 100 V.

### Claim 3 (depends on 1)

The method, as defined by claim 1, wherein a value of the cusp magnetic field is in a range of about 300 to 10000 G.

### Claim 4 (depends on 1)

The method, as defined by claim 1, wherein the feed gas is a mixture of the noble gas and a gas that comprises target material atoms.

### Claim 5 (depends on 1)

The method, as defined by claim 1, wherein the feed gas comprises a mixture of the noble gas and a reactive gas.

### Claim 6 (depends on 1)

The method, as defined by claim 1, wherein the cathode magnet assembly rotates at a speed in the range of 1 to 100 revolutions per minute.

### Claim 7 (depends on 1)

The method, as defined by claim 1, wherein the substrate is a semiconductor wafer with a diameter in a range of 100 mm to 450 mm.

### Claim 8 (depends on 1)

The method, as defined by claim 1, wherein a voltage on the electrode is a negative pulsed voltage.

### Claim 9

An apparatus that ionized physical vapor deposition (I-PVD) sputters a layer on a substrate, the apparatus comprising:
a cathode, an anode, and a cathode magnet assembly positioned in a vacuum chamber;
a gap provided inside the anode around the cathode, a cusp magnetic field being provided in the gap, at least a portion of magnetic field lines associated with the cusp magnetic field passing through the gap and terminating on the cathode magnet assembly;
an electrode positioned in the gap, the electrode providing a voltage;
a noble feed gas selected to sputter target material;
a circuit connecting the cathode to radio frequency (RF) power, thereby generating plasma discharge that ionizes sputtered target material; and
a bias power supply providing negative bias voltage to the substrate, thereby attracting positively charged ions from the sputtered target material to the substrate surface.

### Claim 10 (depends on 9)

The apparatus, as defined by claim 9, wherein the electrode comprises a floating electrical potential.

### Claim 11 (depends on 9)

The apparatus, as defined by claim 9, wherein the electrode is connected to a power supply.

### Claim 12 (depends on 9)

The apparatus, as defined by claim 9, wherein the cathode is connected to a direct current (DC) power supply.

### Claim 13 (depends on 9)

The apparatus, as defined by claim 9, wherein a width of the gap is in a range of 1-10 mm.

### Claim 14

A method of generating high density plasma, the method comprising:
positioning a cathode, an anode, and a cathode magnet assembly in a vacuum chamber;
providing a gap inside the anode around the cathode, a cusp magnetic field being provided in the gap, at least a portion of magnetic field lines associated with the cusp magnetic field passing through the gap and terminating on the cathode magnet assembly;
positioning an electrode in the gap;
providing a feed gas selected to generate high density plasma;
applying voltage to the electrode; and
applying radio frequency (RF) power to the cathode, thereby generating plasma discharge that generates high density plasma.

### Claim 15 (depends on 14)

The method, as defined by claim 14, wherein a value of the cusp magnetic field in the gap is in a range of about 300 to 10000 G.

### Claim 16 (depends on 14)

The method, as defined by claim 14, wherein the feed gas comprises a mixture of a noble gas and a reactive gas.

### Claim 17 (depends on 14)

The method, as defined by claim 14, wherein the cathode magnet assembly rotates at a speed in a range of 1 to 100 revolutions per minute.

### Claim 18 (depends on 14)

The method, as defined by claim 14, wherein the substrate is a semiconductor wafer with a diameter in a range of 100 to 450 mm.

### Claim 19 (depends on 14)

The method, as defined by claim 14, wherein the voltage on the electrode is a negative pulsed voltage.

### Claim 20 (depends on 14)

The method, as defined by claim 14, wherein the cathode is connected to a ground electrical potential through a circuit comprising an inductor.