# US 10,480,061 B2 · Sputtering target

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- Number: US 10,480,061 B2
- Document ID: US10480061B2
- Status: Granted
- Kind: B2
- Application number: 16/034,834
- Filed: 2018-07-13
- Published: 2018-11-15
- Granted: 2019-11-19
- Earliest claimed: 2015-05-04
- Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd.
- Applicants: Tsinghua University; Hon Hai Precision Industry Co., Ltd.
- Inventors: Da-Ming Zhuang; Ming Zhao; Ming-Jie Cao; Li Guo; Shi-Lu Zhan; Xiao-Long Li
- Web page: https://patentgrep.com/patent/US10480061B2

## CPC

- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- B28B 3/00: Producing shaped articles from the material by using presses (shaping on moving conveyors B28B5/00); Presses specially adapted therefor (presses in general B30B)
- C23C 14/08: Oxides (C23C14/10 takes precedence)
- H01J 37/3414: {Targets}
- H01J 37/3426: {Material}
- H01J 37/3429: {Plural materials}
- H01J 37/3491: {Manufacturing of targets}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- B28B: SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER (foundry moulding B22C; working stone or stone-like material B28D; shaping of substances in a plastic state, in general B29C; making layered products not composed wholly of these substances B32B)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10−2 Ωcm to about 10 Ωcm. A weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.

## Claims

### Claim 1

A sputtering target comprising an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2.

### Claim 2 (depends on 1)

The sputtering target of claim 1, wherein the In2CexZnO4+2x is a crystal.

### Claim 3 (depends on 1)

The sputtering target of claim 1 comprising a relative density larger than or equal to 90%.

### Claim 4 (depends on 1)

The sputtering target of claim 1 comprising a bulk resistance in a range from about 10−2 Ωcm to about 10 Ωcm.

### Claim 5 (depends on 1)

The sputtering target of claim 1, wherein a weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.

### Claim 6 (depends on 1)

The sputtering target of claim 1, wherein the sputtering target only comprises In2CexZnO4+2x, indium oxide (In2O3), cerium oxide (CeO2), and zinc oxide (ZnO).

### Claim 7 (depends on 1)

The sputtering target of claim 1, wherein the sputtering target only comprises In2CexZnO4+2x.

### Claim 8 (depends on 1)

The sputtering target of claim 1, wherein an amount of impurities in the sputtering target is less than 10 ppm.

### Claim 9 (depends on 1)

The sputtering target of claim 1, wherein an average surface roughness of the sputtering target is less than or equal to 2 microns.

### Claim 10 (depends on 9)

The sputtering target of claim 9, wherein the average surface roughness of the sputtering target is less than or equal to 0.5 microns.

### Claim 11 (depends on 1)

The sputtering target of claim 1, wherein an average flexural strength of the sputtering target is larger than or equal to 50 MPa.

### Claim 12 (depends on 1)

The sputtering target of claim 1, wherein the sputtering target is obtained by sintering a mixture of indium oxide (In2O3) powder, cerium oxide (CeO2) powder, and zinc oxide (ZnO) powder, and a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1.