# US 10,479,732 B2 · Oxynitride thin film and capacitance element

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- Number: US 10,479,732 B2
- Document ID: US10479732B2
- Status: Granted
- Kind: B2
- Application number: 15/938,344
- Filed: 2018-03-28
- Published: 2018-10-04
- Granted: 2019-11-19
- Earliest claimed: 2017-03-31
- Assignees: TDK Corporation
- Applicants: TDK Corporation
- Inventors: Takeshi Shibahara; Yuki Nagamine; Kumiko Yamazaki
- Web page: https://patentgrep.com/patent/US10479732B2

## CPC

- C04B 35/58007: {based on refractory metal nitrides}
- C04B 35/462: based on titanates
- C04B 35/495: based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B 35/58014: {based on titanium nitrides, e.g. TiAlON}
- C04B 35/62218: {obtaining ceramic films, e.g. by using temporary supports}
- C04B 35/6262: {of calcined, sintered clinker or ceramics}
- C04B 35/6264: {Mixing media, e.g. organic solvents}
- C04B 35/62655: {Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying}
- C04B 35/63416: {Polyvinylalcohols [PVA]; Polyvinylacetates}
- C04B 35/64: Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F})
- H01B 3/10: metallic oxides (ceramics H01B3/12)
- H01G 4/085: {Vapour deposited}
- H01G 4/1218: {based on titanium oxides or titanates (H01G4/1245 takes precedence)}
- H01G 4/1272: {Semiconductive ceramic capacitors}
- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H10D 1/682: {having dielectrics comprising perovskite structures}
- C04B 2235/3201: Alkali metal oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3213: Strontium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B 2235/3227: Lanthanum oxide or oxide-forming salts thereof
- C04B 2235/3229: Cerium oxides or oxide-forming salts thereof
- C04B 2235/3886: Refractory metal nitrides, e.g. vanadium nitride, tungsten nitride
- C04B 2235/602: Making the green bodies or pre-forms by moulding
- C04B 2235/604: Pressing at temperatures other than sintering temperatures
- C04B 2235/612: Machining
- C04B 2235/656: characterised by specific heating conditions during heat treatment
- C04B 2235/6567: Treatment time
- C04B 2235/768: Perovskite structure ABO3
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein “A” is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, “B” is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.

## Claims

### Claim 1

A capacitance element comprising a dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5),
wherein the “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na,
the “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and
crystalline particles constituting said dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles comprises columnar shape crystals.

### Claim 2 (depends on 1)

The capacitance element according to claim 1, wherein the columnar shape crystals extend to a direction crossing with a substrate of which the dielectric thin film is formed.

### Claim 3 (depends on 2)

The capacitance element according to claim 2, wherein a constituting ratio by count of said columnar shape crystals extending entirely from one surface to a rear face of the dielectric thin film are 30% or more.

### Claim 4 (depends on 1)

The capacitance element according to claim 1, wherein a fluctuation rate calculated from compositional ratios of nitrogen at a position of ¼ of depth, ½ of depth, and ¾ of depth from the surface of the dielectric thin film in a thickness direction are within maximum of ±55%.

### Claim 5 (depends on 1)

The capacitance element according to claim 1, wherein the “A” is Sr, the “B” is at least one of Ta and Nb, and the “n” is larger than 0 and smaller than 1.