# US 10,478,941 B2 · Pad conditioner having reduced friction and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,478,941 B2 - Document ID: US10478941B2 - Status: Granted - Kind: B2 - Application number: 13/081,981 - Filed: 2011-04-07 - Published: 2011-10-13 - Granted: 2019-11-19 - Earliest claimed: 2010-04-08 - Assignees: Ehwa Diamond Ind. Co., Ltd. - Applicants: So Young Yoon; Joo Han Lee; Jong Jae Lee - Inventors: So Young Yoon; Joo Han Lee; Jong Jae Lee - Web page: https://patentgrep.com/patent/US10478941B2 ## CPC - B24B 53/017: Devices or means for dressing, cleaning or otherwise conditioning lapping tools - B24B 53/12: Dressing tools; Holders therefor - B24D 2203/00: Tool surfaces formed with a pattern - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - B24D: TOOLS FOR GRINDING, BUFFING OR SHARPENING (abrading-bodies specially designed for tumbling apparatus, e.g. abrading-balls B24B31/14; honing tools B24B33/08; lapping tools B24B37/11) ## Abstract This invention relates to a conditioner for a chemical mechanical planarization pad, which is necessary for global planarization of a wafer in order to increase the degree of integration of a semiconductor device, and more particularly to a pad conditioner having a structure able to reduce friction with a pad so as to solve the problems caused by a lot of friction being generated upon conditioning, and to a method of manufacturing the same. ## Claims ### Claim 1 A pad conditioner having reduced friction, comprising: a substrate having a plurality of protrusions having different heights which are formed upwards and separated from each other by a same distance on part or all of one surface of the substrate, each of tops of the protrusions forming a plane parallel to the surface of the substrate; and a diamond layer disposed on the plurality of protrusions or on the entire surface having the protrusions, wherein a diamond crystalline structure of the diamond layer has a (1,0,0) growth plane, wherein the diamond layer is deposited using Chemical Vapor Deposition (CVD) under conditions including a filament temperature of 1900˜2000° C. and a substrate temperature of 1000˜1100° C., and wherein the plurality of protrusions comprise a first height group comprising a plurality of first protrusions having a first height, a second height group comprising a plurality of second protrusions having a second height, and a third height group comprising a plurality of third protrusions having a third height, in which the second height is lower than the first height, the third height is lower than the second height, and a difference between the first height and the second height is 10˜70 μm, wherein each of the second protrusions of the second height group and each of the third protrusions of the third height group are formed such that only one of the second protrusions and only one of the third protrusions are disposed between a pair of first protrusions of the first height group in any direction. ### Claim 2 (depends on 1) The pad conditioner of claim 1, wherein the plurality of protrusions are formed separated by a distance of 0.1˜25 mm. ### Claim 3 (depends on 1) The pad conditioner of claim 1, wherein the difference between the first height and the second height is 30 μm and the difference between the second height and the third height is 30 μm. ### Claim 4 A method of manufacturing the pad conditioner having reduced friction, the pad conditioner comprising: a substrate having a plurality of protrusions having different heights which are formed upwards and separated from each other by a same distance on part or all of one surface of the substrate, each of tops of the protrusions forming a plane parallel to the surface of the substrate; and a diamond layer disposed on the plurality of protrusions or on the entire surface having the protrusions, wherein a diamond crystalline structure of the diamond layer has a (1,0,0) growth plane, wherein the diamond layer is deposited using Chemical Vapor Deposition (CVD) under conditions including a filament temperature of 1900˜2000° C. and a substrate temperature of 1000˜1100° C., and wherein the plurality of protrusions comprise a first height group comprising a plurality of first protrusions having a first height, a second height group comprising a plurality of second protrusions having a second height, and a third height group comprising a plurality of third protrusions having a third height, in which the second height is lower than the first height, the third height is lower than the second height, and a difference between the first height and the second height is 10˜70 μm, wherein each of the second protrusions of the second height group and each of the third protrusions of the third height group are formed such that only one of the second protrusions and only one of the third protrusions are disposed between a pair of first protrusions of the first height group in any direction, the method comprising: preparing a substrate; forming a plurality of protrusions having a uniform height and separated from each other by a predetermined distance on a surface of the substrate, each of tops of the protrusions forming a plane parallel to the surface of the substrate; polishing the plurality of protrusions having the uniform height in a predetermined pattern so that the plurality of protrusions have different heights; and coating the surface of the substrate having the plurality of protrusions having different heights with a diamond layer, wherein the forming the plurality of protrusions is performed using a first step of etching and a second step comprising any one among an end mill, a milling cutter, a drill and a tap; the polishing the plurality of protrusions is performed using any one among an end mill, a milling cutter, a drill and a tap; and the coating is performed using CVD, wherein the diamond layer comprises a microcrystalline diamond coating layer having a thickness of 70˜90% of a total thickness and a nanocrystalline diamond coating layer having a thickness of 10˜30% which is a remainder of the total thickness formed on an upper surface of the microcrystalline diamond coating layer, and wherein the second step further comprises, when part of the height of the protrusions is formed, forming the remaining height of the protrusions using any one among a cutting wheel, an end mill, a milling cutter, a drill and a tap. ### Claim 5 (depends on 4) The method of claim 4, wherein subjecting at least one surface of the substrate to precise grinding and lapping is performed, before forming the protrusions. ### Claim 6 (depends on 4) The method of claim 4, wherein the difference between the first height and the second height is 30 μm and the difference between the second height and the third height is 30 μm.