Image sensor and image sensing method

An image sensing method, adapted to an image sensor, wherein the image sensor comprises a plurality of pixels and a plurality of pixel sensing circuits, and the pixels comprise a plurality of pixel types, wherein the pixels are configured to sense an image, and the pixels have different corresponding characteristic curves based on the pixel types, the image sensing method comprising:

• respectively obtaining a plurality of reference pictures by using the pixels according to the pixel types;
• and
• analyzing the reference pictures according to the corresponding characteristic curves of the pixels, so as to form a specific picture by combining the reference pictures,
• wherein the pixels respectively comprise a first electrode, a second electrode and an opto-electronic layer, and the first electrode and the second electrode are coplanar and alternately disposed on a substrate,
• wherein the first electrode and the second electrode have a semi-open comb-like pattern.

An image sensor, comprising:

• a plurality of pixels, arranged in a pixel array, and configured to sense an image to obtain a plurality of reference pictures, wherein the pixels have a plurality of pixel types;
• and
• a plurality of pixel sensing circuits, respectively and electrically connected to the pixels, and configured to respectively receive a photo current generated by each of the pixels,
• wherein the pixels respectively comprise:
• a first electrode and a second electrode, electrically connected to the pixel sensing circuits, and configured to receive an electrode bias provided by the pixel sensing circuits;
• and
• an opto-electronic layer, disposed between the first electrode and the second electrode, and configured to produce the photo current corresponding to reference pictures according to the electrode bias,
• wherein the first electrode, the second electrode and the opto-electronic layer are vertically disposed on a substrate, such that the second electrode, the opto-electronic layer and the first electrode are sequentially stacked,
• wherein the pixels respectively have a different corresponding characteristic curve based on the pixel types, and at least one of an electrode structure parameter and an electrode bias of each of the pixels is determined according to the corresponding characteristic curves.