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US 10,476,493 B2Granted
Buffer circuit, semiconductor integrated circuit device, oscillator, electronic apparatus, and base station
AssigneeSeiko Epson Corporation
InventorKenji Hayashi
Life of this patent
Estimating the term…
Abstract
A buffer circuit includes a first MOSFET including a first source electrode, a first gate electrode, and a first drain electrode, and a second MOSFET, which includes a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, and the first gate electrode and the second gate electrode are electrically connected to each other.
Claims20
A buffer circuit comprising:
- a first MOSFET comprising a first source electrode, a first gate electrode, and a first drain electrode;
- a second MOSFET, which comprises a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, the second gate electrode being electrically connected to the first gate electrode;
- a third MOSFET comprising a third source electrode, a third gate electrode, and the first drain electrode;
- and
- a first switch connected to the third gate electrode and the first gate electrode.
2 more elements
A buffer circuit comprising:
- at least two MOSFETs comprising a first MOSFET and a second MOSFET;
- and
- an interconnection through which a signal from the MOSFET is transmitted,
- wherein a ratio of a sum of widths of parts to be current paths out of the interconnections, in a second state in which the first MOSFET and the second MOSFET are selected, to a sum of widths of parts to be current paths out of the interconnections in a first state, in which the first MOSFET is selected and the second MOSFET is unselected, is lower than a ratio of a sum of a channel width of the first MOSFET and a channel width of the second MOSFET in the second state to a sum of channel widths of the first MOSFET in the first state.
1 more element
A buffer circuit comprising:
- a first MOSFET comprising a first source electrode, a first gate electrode, and a first drain electrode;
- a second MOSFET, which comprises a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, the second gate electrode being electrically connected to the first gate electrode;
- and
- a frequency divider, which is disposed in an anterior stage of the first and second MOSFETs, and division ratio of which can be selected.
1 more element
A buffer circuit comprising:
- a first MOSFET comprising a first source electrode, a first gate electrode, and a first drain electrode;
- a second MOSFET, which comprises a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, the second gate electrode being electrically connected to the first gate electrode;
- a third MOSFET comprising a third source electrode, a third gate electrode, and the first drain electrode;
- and
- a fourth MOSFET comprising a fourth source electrode, a fourth gate electrode, and the second drain electrode,
- wherein the third MOSFET and the fourth MOSFET are same in polarity as each other.
3 more elements
Dependencies are inferred from the claim text.