Dual-mode MEMS resonator, oscillator, sensor, timing device, acoustic filter and front-end module and the methods of making
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsHumberto Campanella-Pineda, You Qian, Rakesh Kumar
Life of this patent
Estimating the term…
Abstract
A dual-mode resonator, devices employing the dual-mode resonator, and the methods of making the resonator and the devices are disclosed. Embodiments include a dual-mode resonator including a semiconductor substrate; a material on the semiconductor substrate, having a cavity formed therein; a seed layer over the cavity in a V-shape, wherein sides of the V-shape form an angle of 15 to 25 degrees with a horizontal line; a bottom electrode on the seed layer; an acoustic layer on the bottom electrode; a top electrode on the acoustic layer; and a mass loading layer on the top electrode; and a cap over the dual-mode resonator.
Claims24
A device comprising:
- a dual-mode resonator comprising:
- a semiconductor substrate;
- a material on the semiconductor substrate, having a cavity formed therein;
- a seed layer over the cavity in a V-shape, wherein sides of the V-shape form an angle of 15 to 25 degrees with a horizontal line;
- a bottom electrode on the seed layer;
- an acoustic layer on the bottom electrode;
- a top electrode on the acoustic layer;
- and
- a mass loading layer on the top electrode;
- and
- a cap over the dual-mode resonator.
A device comprising:
- a dual-mode resonator comprising:
- a semiconductor substrate;
- a material on the semiconductor substrate, the material having a V-shaped groove, forming a grooved area, with sides of the V-shaped groove forming an angle of 15 to 25 degrees with a horizontal line;
- an acoustic mirror or Bragg reflector on the grooved area;
- a seed layer over the acoustic mirror or Bragg reflector;
- a bottom electrode on the seed layer;
- an acoustic layer on the bottom electrode;
- a top electrode on the acoustic layer;
- and
- a mass loading layer on the top electrode;
- and
- a cap over the dual-mode resonator.
A method comprising:
- forming a material on a semiconductor substrate;
- forming a V-shaped groove in the material, forming a grooved area, sides of the V-shaped groove forming an angle of 15 to 25 degrees with a horizontal line;
- forming a seed layer on the grooved area;
- forming a bottom electrode on the seed layer on at least the grooved area;
- forming an acoustic layer on the bottom electrode on at least the grooved area;
- forming a top electrode on the acoustic layer on at least the grooved area;
- forming a mass loading layer on the top electrode on at least the grooved area;
- forming release vias through the top electrode, the acoustic layer, the bottom electrode, and the seed layer;
- removing at least a portion of the material through the release vias, forming a dual-mode resonator;
- and
- forming a cap over the dual-mode resonator.
A method comprising:
- forming a material on a semiconductor substrate;
- forming a V-shaped groove in the material, forming a grooved area, sides of the V-shaped groove forming an angle of 15 to 25 degrees with a horizontal line;
- forming an acoustic mirror or Bragg reflector on the grooved area:
- forming a seed layer on the acoustic mirror or Bragg reflector;
- forming a bottom electrode on the seed layer;
- forming an acoustic layer on the bottom electrode;
- forming a top electrode on the acoustic layer;
- forming a mass loading layer on the top electrode, forming a dual-mode resonator;
- and
- forming a cap over the dual-mode resonator.
Dependencies are inferred from the claim text.