Composite device
AssigneeMurata Manufacturing Co., Ltd.
InventorsYasumasa Taniguchi, Masashi Omura, Takashi Yamane
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Abstract
A composite device includes a silicon substrate including first and second main surfaces on opposite sides, a semiconductor device adjacent to at least one of the first and second main surfaces, and an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer. The piezoelectric layer has a thickness of not greater than about 2.5λ where λ is a wavelength defined by an electrode finger pitch of the IDT.
Claims20
A composite device comprising:
- a silicon substrate including a first main surface and a second main surface opposed to the first main surface;
- a semiconductor device disposed adjacent to at least one of the first main surface and the second main surface of the silicon substrate;
- and
- an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an interdigital transduder (IDT) disposed on the piezoelectric layer;
- wherein
- the piezoelectric layer has a thickness of not greater than about 2.5λ, where λ is a wavelength defined by an electrode finger pitch of the IDT.
Dependencies are inferred from the claim text.