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US 10,476,234 B2Granted
Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same
AssigneeUniversity of Houston System
InventorsJae-Hyun Ryou, Shahab Shervin, Seung Hwan Kim
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Abstract
Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.
Claims15
A mounted field-effect transistor comprising:
- a layered structure comprising a channel at the interface of a first layer and a second layer, wherein the channel comprises a high density of electrons, and wherein the first layer consists of a material according to a first formula InxAlyGa1-x-yN or a second formula MgxZnyCd1-x-yO;
- at least a first and a second electrode in contact with the first layer and free of contact with the second layer,
- wherein the layered structure is in one of a bend-up or bend-down condition and comprises a predetermined amount of strain as a result of external strain applied to the entire layered structure by bending;
- and
- a packaging substrate, wherein the layered structure is disposed in contact with the packaging substrate and retains at least some of the predetermined amount of strain subsequent to disposal, wherein the packaging substrate is not bent and comprises a curved surface, and wherein the layered structure is disposed in contact with the curved surface of the packaging substrate.
2 more elements
Dependencies are inferred from the claim text.