Ultra-low noise, highly stable single-mode operation, high power, Bragg grating based semiconductor laser
AssigneeMorton Photonics
InventorPaul Morton
Life of this patent
Estimating the term…
Abstract
A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection.
Claims17
A laser comprising:
- a semiconductor gain element to generate light;
- an external cavity with integrated Bragg grating monolithically integrated with the gain element;
- wherein a first end of the gain element has a high reflectivity forming a first end of a laser cavity;
- a second end of the gain element has a low reflectivity, allowing light generated from the gain element to be coupled with a first end of the external cavity, and the Bragg grating forming a second end of the laser cavity;
- wherein the physical length of the Bragg grating is greater than 20 mm and occupies at least 75% of the physical length of the external cavity.
Dependencies are inferred from the claim text.