Photonic device comprising a laser optically connected to a silicon waveguide and method for manufacturing such a photonic device

A method for manufacturing a photonic device comprising at least one silicon waveguide and a laser including a gain medium capable of emitting light, the method comprising the following steps:

• providing a substrate associated with at least one silicon layer on a first dielectric layer,
• forming, at least in part in the silicon layer, a first waveguide, a first waveguide section, a second waveguide section, a third waveguide section, a fourth waveguide section and a fifth waveguide section, the first waveguide section, the second waveguide section, the third waveguide section, the fourth waveguide section and the fifth waveguide section being distinct from the first waveguide, succeeding each other optically connected two by two, and being optically connected to the first waveguide by at least one of the first waveguide section and the fifth waveguide section, the third waveguide section including a pattern arranged uniquely over a first part of its thickness, said pattern forming a Bragg grating,
• burying the first waveguide, the first waveguide section, the second waveguide section, the third waveguide section, the fourth waveguide section and the fifth waveguide section by at least one dielectric filling material and planarization of said dielectric filling material in order to form an optical guiding level including the first waveguide, the first waveguide section, the second waveguide section, the third waveguide section, the fourth waveguide section, the fifth waveguide section and an intermediate layer in contact with said optical guiding level, the third waveguide section being in contact with the intermediate layer, the second waveguide section and fourth waveguide section being in contact with the intermediate layer on a part of the intermediate layer which is constituted uniquely of dielectric materials, a substrate/first dielectric layer/optical guiding level/intermediate layer assembly thereby being formed,
• providing a support,
• assembling the substrate/first dielectric layer/optical guiding level/intermediate layer assembly on the support, the assembly being carried out by bonding of the intermediate layer on the support,
• removal of the substrate,
• forming a gain structure comprising at least a gain medium, the gain structure being formed in contact with the first dielectric layer while having a central portion of the gain structure facing the third waveguide section and a first end and a second end facing respectively the second waveguide section and the fourth waveguide section, thus, the central portion of the gain structure forms with the third waveguide section a laser hybrid waveguide, the second waveguide section and the first ends of the gain structure forming a first zone of optical transition of an optic mode between the laser hybrid waveguide and the first waveguide section, and the fourth waveguide section, and the second end of the gain structure forming a second zone of optical transition of an optic mode between the laser hybrid waveguide and the fifth waveguide section, the photonic device thereby being formed, during said formation of the structure, the first part of the thickness of the third waveguide section over which is arranged the pattern being separated from the first dielectric layer by at least one second part of the thickness of the third waveguide section.