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US 10,476,015 B2Granted
Organic electronic/optoelectronic devices
AssigneesFlexenable Limited, Cambridge Enterprise Limited
InventorsHenning Sirringhaus, Mark Nikolka, Iyad Nasrallah, Jan Jongman
Life of this patent
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Abstract
An electronic or optoelectronic device including a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material.
Claims17
A p-type semiconductor device comprising:
- a semiconductor layer,
- wherein the semiconductor layer comprises at least a semiconductive organic material, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive occupies at least some voids within the semiconductive organic material occupiable by water molecules, and has a smaller charge carrier trapping effect on the semiconductive organic material than water, and
- wherein the additive comprises a material having an electron affinity less than the ionization potential of the semiconductive organic material by at least 0.3 eV.
A p-type semiconductor device comprising:
- a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material,
- wherein the additive comprises a material having an electron affinity less than the ionization potential of the semiconductive organic material by at least 0.3 eV, and
- wherein the device is an electronic switching device, and the additive comprises a material having an ionization potential greater than the ionization potential of the semiconductive organic material by at least 0.3 eV.
A p-type semiconductor device comprising:
- a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one molecular additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which molecular additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material,
- wherein the molecular additive comprises a material having an electron affinity less than the ionization potential of the semiconductive organic material by at least 0.3 eV,
- wherein said molecular additive is liquid at room temperature and is a solvent for the semiconductive organic material, and
- wherein the solubility of the semiconductive organic material in the liquid molecular additive is at least 0.1% by weight.
1 more element
A p-type semiconductor device comprising:
- a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one molecular additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which molecular additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material,
- wherein the molecular additive comprises a material having an electron affinity less than the ionization potential of the semiconductive organic material by at least 0.3 eV,
- wherein said device is an electronic switching device and the incorporation of the molecular additive reduces the threshold voltage shift of the electronic switching device in a stress test by 50% compared to that of a reference device, in which no molecular additive is incorporated in said semiconductive organic material, and
- wherein said stress test involves operating the device in the saturation regime at a drain current of about (0.25 μA×W/L) for a period of 25 hours, where W and L are the channel width and channel length of the electronic switching device.
1 more element
Dependencies are inferred from the claim text.