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US 10,476,002 B2Granted
Method for thermally treating semiconductor structure before saving data
AssigneeMacronix International Co., Ltd.
InventorsYu-Yu Lin, Feng-Min Lee, Po-Hao Tseng, Kai-Chieh Hsu
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Abstract
A method for treating a semiconductor structure comprising memory devices is provided, wherein a forming process is conducted to initialize operation of the memory devices. The semiconductor structure is subjected to a forming thermal treatment, and step of saving data to the memory devices is performed after the forming thermal treatment.
Claims13
A method for treating a semiconductor structure, comprising:
- providing the semiconductor structure comprising memory devices;
- conducting a forming process to initialize operation of the memory devices;
- subjecting the semiconductor structure to a forming thermal treatment, wherein the forming thermal treatment is a SET dummy baking;
- subjecting at least one of the memory devices to a RESET thermal process after performing the SET dummy baking and before saving data to said at least one of the memory devices, wherein the RESET thermal process is performed at a temperature of 150° C. to 250° C.;
- saving data to said at least one of the memory devices;
- and
- reflowing said at least one of the memory devices at a reflowing temperature after saving data to said at least one of the memory devices.
4 more elements
Dependencies are inferred from the claim text.