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US 10,476,000 B2Granted
Method of forming a layer and a method of fabricating a variable resistance memory device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeonghee Park, Kyoung Sun Kim
Life of this patent
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Abstract
A method of forming a target layer in semiconductor fabrication is disclosed that includes steps of forming a first layer by performing a first process at least one time and forming a second layer by performing a second process at least one time, wherein the first process may include supplying a first source gas, supplying a second source gas several times, and supplying an inert gas several times.
Claims10
A method of forming a target layer for a semiconductor device, comprising performing a unit process at least one time,
- wherein the unit process comprises:
- forming a first layer on a substrate by performing a first process at least one time;
- and
- forming a second layer on the first layer by performing a second process at least one time,
- wherein the first process consists of a set of sequential steps selected from set (A) or set (B) wherein:
- set (A) consists of the steps of:
- (A)(1) supplying a first source gas;
- (A)(2) supplying an inert gas;
- (A)(3) supplying a second source gas n times, where n is an integer equal to or greater than 2;
- and
- (A)(4) supplying an inert gas m times, where m is an integer equal to or greater than 2;
- and,
- set (B) consists of the steps of:
- (B)(1) supplying a first source gas;
- (B)(2) supplying an inert gas;
- (B)(3) supplying a second source gas;
- (B)(4) supplying an inert gas;
- and,
- (B)(5) repeating steps (B)(3) and (B)(4) sequentially n times, where n is an integer equal to or greater than 2.
16 more elements
Dependencies are inferred from the claim text.